Semiconductor device, manufacturing method thereof, display device, and electronic device

ABSTRACT

The field-effect mobility and reliability of a transistor including an oxide semiconductor film are improved. Provided is a semiconductor device including an oxide semiconductor film. The semiconductor device includes a first insulating film, an oxide semiconductor film over the first insulating film, a second insulating film and a third insulating film over the oxide semiconductor film, and a gate electrode over the second insulating film. The second insulating film comprises a silicon oxynitride film. When excess oxygen is added to the second insulating film by oxygen plasma treatment, oxygen can be efficiently supplied to the oxide semiconductor film.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/431,002, filed Feb. 13, 2017, now allowed, which claims the benefitof foreign priority applications filed in Japan as Serial No.2016-028586 on Feb. 18, 2016, and Serial No. 2016-193217 on Sep. 30,2016, all of which are incorporated by reference.

TECHNICAL FIELD

One embodiment of the present invention relates to a semiconductordevice including an oxide semiconductor film, a method for manufacturingthe semiconductor device, a display device including the semiconductordevice, and an electronic device including the semiconductor device.

Note that one embodiment of the present invention is not limited to theabove technical field. The technical field of one embodiment of theinvention disclosed in this specification and the like relates to anobject, a method, or a manufacturing method. In addition, one embodimentof the present invention relates to a process, a machine, manufacture,or a composition of matter. In particular, one embodiment of the presentinvention relates to a semiconductor device, a display device, alight-emitting device, a power storage device, or a memory device, or adriving method or manufacturing method thereof.

In this specification and the like, a semiconductor device generallymeans a device that can function by utilizing semiconductorcharacteristics. A semiconductor element such as a transistor, asemiconductor circuit, an arithmetic device, and a memory device areeach an embodiment of a semiconductor device. An imaging device, adisplay device, a liquid crystal display device, a light-emittingdevice, an electro-optical device, a power generation device (includinga thin film solar cell, an organic thin film solar cell, and the like),and an electronic device may each include a semiconductor device.

BACKGROUND ART

A technique by which a transistor is formed using a semiconductor thinfilm formed over a substrate having an insulating surface has beenattracting attention. The transistor is applied to a wide range ofelectronic devices such as an integrated circuit (IC) or an imagedisplay device (display device). A silicon-based semiconductor materialis widely known as a material for a semiconductor thin film applicableto the transistor. As another material for the same, an oxidesemiconductor has been attracting attention.

For example, a transistor whose active layer includes an amorphous oxidecontaining indium (In), gallium (Ga), and zinc (Zn) and having anelectron carrier concentration lower than 10¹⁸/cm³ is disclosed (seePatent Document 1).

Although a transistor including an oxide semiconductor can be operatedat higher speed than a transistor including amorphous silicon and can bemanufactured more easily than a transistor including polycrystallinesilicon, the transistor including an oxide semiconductor is known tohave a problem of low reliability because of high possibility of achange in electrical characteristics. For example, the threshold voltageof the transistor might be changed after a bias-temperature stress test(BT test). Note that in this specification, threshold voltage refers toa gate voltage which is needed to turn on a transistor. A gate voltagerefers to a potential difference between a source potential and a gatepotential when the source potential is regarded as a referencepotential.

REFERENCE Patent Document [Patent Document 1] Japanese Published PatentApplication No. 2006-165528 DISCLOSURE OF INVENTION

In a transistor that uses an oxide semiconductor film in its channelregion, oxygen vacancies which might be formed in the oxidesemiconductor film adversely affect the transistor characteristics. Whenoxygen vacancies are formed in the oxide semiconductor film, forexample, the oxygen vacancies are bonded to hydrogen to serve as carriersupply sources. The carrier supply sources generated in the oxidesemiconductor film cause a change in the electrical characteristics,typified by a shift in the threshold voltage, of the transistorincluding the oxide semiconductor film.

Too many oxygen vacancies in the oxide semiconductor film shift thethreshold voltage of the transistor in the negative direction, causingnormally-on characteristics, for example. Thus, it is preferable thatthe oxide semiconductor film, especially a channel region, include fewoxygen vacancies or include a small amount of oxygen vacancies such thatnormally-on characteristics are not caused.

Carrier trap centers in a gate insulating film cause a shift in thethreshold voltage of the transistor. Although the number of carrier trapcenters is desirably small, it might be increased when treatment such asplasma treatment is performed after the formation of the gate insulatingfilm.

In view of the foregoing problems, an object of one embodiment of thepresent invention is to prevent a change in the electricalcharacteristics of a transistor including an oxide semiconductor filmand to improve the reliability of the transistor. Another object of oneembodiment of the present invention is to provide a novel semiconductordevice. Another object of one embodiment of the present invention is toprovide a novel display device.

Note that the description of the above objects does not preclude theexistence of other objects. In one embodiment of the present invention,there is no need to achieve all of these objects. Objects other than theabove objects will be apparent from and can be derived from thedescription of the specification and the like.

One embodiment of the present invention is a semiconductor deviceprovided with a transistor including an oxide semiconductor film. Thetransistor includes, over a substrate, the oxide semiconductor film, agate insulating layer thereover, and a gate electrode thereover. Thegate insulating layer includes a silicon oxynitride film. When the gateinsulating layer over the substrate is analyzed by thermal desorptionspectroscopy, the highest peak of the amount of a released gas with amass-to-charge ratio M/z of 32, which corresponds to an oxygen molecule,appears at a substrate temperature higher than or equal to 150° C. andlower than or equal to 350° C.

In the above embodiment, measurement temperature of the thermaldesorption spectroscopy is preferably higher than or equal to 80° C. andlower than or equal to 500° C.

In any of the above embodiments, the oxide semiconductor film preferablycontains In, M, and Zn, where M is Al, Ga, Y, or Sn. In any of the aboveembodiments, the oxide semiconductor film preferably includes a crystalpart having c-axis alignment.

Another embodiment of the present invention is a display deviceincluding the semiconductor device according to any of the aboveembodiments and a display element. Another embodiment of the presentinvention is a display module including the display device and a touchsensor. Another embodiment of the present invention is an electronicdevice including the semiconductor device according to any of the aboveembodiments, the above-described display device, or the display module;and an operation key or a battery.

Another embodiment of the present invention is a manufacturing method ofa semiconductor device provided with a transistor including an oxidesemiconductor film. The oxide semiconductor film is formed over asubstrate, a gate insulating layer including at least a siliconoxynitride film is formed thereover, and oxygen plasma treatment isperformed on the gate insulating layer. After a gate electrode is formedover the gate insulating layer, heat treatment is performed at atemperature higher than or equal to 150° C. and lower than or equal to450° C. to diffuse oxygen in the gate insulating layer to the oxidesemiconductor film and to decrease conductivity of the oxidesemiconductor film.

In the above embodiment, the oxygen plasma treatment is preferablyperformed at a substrate temperature lower than or equal to 350° C. Inany of the above embodiments, the silicon oxynitride film is preferablyformed by a plasma CVD method at a substrate temperature lower than orequal to 350° C.

Another embodiment of the present invention is a manufacturing method ofa semiconductor device provided with a transistor including an oxidesemiconductor film. The oxide semiconductor film is formed over asubstrate, and a gate insulating layer including at least a siliconoxynitride film is formed thereover. An oxide semiconductor is depositedover the gate insulating layer in an atmosphere containing oxygen by asputtering method, so that a gate electrode is formed while oxygen isadded to the gate insulating layer. After that, heat treatment isperformed at a temperature higher than or equal to 150° C. and lowerthan or equal to 450° C. to diffuse oxygen in the gate insulating layerto the oxide semiconductor film and to decrease conductivity of theoxide semiconductor film.

One embodiment of the present invention can prevent a change in theelectrical characteristics of a transistor including an oxidesemiconductor film and improve the reliability of the transistor. Oneembodiment of the present invention can provide a novel semiconductordevice. One embodiment of the present invention can provide a noveldisplay device.

Note that the description of these effects does not preclude theexistence of other effects. One embodiment of the present invention doesnot necessarily have all the effects listed above. Other effects will beapparent from and can be derived from the description of thespecification, the drawings, the claims, and the like.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A to 1C are top view and cross-sectional views illustrating asemiconductor device.

FIGS. 2A to 2C are top view and cross-sectional views illustrating asemiconductor device.

FIGS. 3A and 3B are cross-sectional views illustrating a semiconductordevice.

FIGS. 4A and 4B are cross-sectional views illustrating a semiconductordevice.

FIGS. 5A to 5D are cross-sectional views illustrating a method formanufacturing a semiconductor device.

FIGS. 6A to 6C are cross-sectional views illustrating a method formanufacturing a semiconductor device.

FIGS. 7A to 7C are cross-sectional views illustrating a method formanufacturing a semiconductor device.

FIGS. 8A to 8C each illustrate an atomic ratio range of an oxidesemiconductor of one embodiment of the present invention.

FIGS. 9A to 9C are band diagrams of stacked-layer structures of oxidesemiconductors.

FIGS. 10A to 10C show evaluation results of silicon oxynitride films ofone embodiment of the present invention.

FIGS. 11A and 11B show evaluation results of silicon oxynitride films ofone embodiment of the present invention.

FIGS. 12A to 12C show measurement results of silicon oxynitride films ofone embodiment of the present invention.

FIGS. 13A and 13B are cross-sectional views illustrating a method formanufacturing a semiconductor device.

FIGS. 14A to 14C show oxygen diffusion effects of one embodiment of thepresent invention.

FIG. 15 is a top view illustrating one embodiment of a display device.

FIG. 16 is a cross-sectional view illustrating one embodiment of adisplay device.

FIG. 17 is a cross-sectional view illustrating one embodiment of adisplay device.

FIG. 18 is a cross-sectional view illustrating one embodiment of adisplay device.

FIG. 19 is a cross-sectional view illustrating one embodiment of adisplay device.

FIG. 20 is a cross-sectional view illustrating one embodiment of adisplay device.

FIGS. 21A to 21D are cross-sectional views illustrating a method forforming an EL layer.

FIG. 22 is a conceptual diagram illustrating a droplet dischargeapparatus.

FIGS. 23A to 23C are a block diagram and circuit diagrams eachillustrating a display device.

FIGS. 24A to 24C are circuit diagrams and a timing chart showing oneembodiment of the present invention.

FIGS. 25A to 25C are a graph and circuit diagrams showing one embodimentof the present invention.

FIGS. 26A and 26B are a circuit diagram and a timing chart showing oneembodiment of the present invention.

FIGS. 27A and 27B are a circuit diagram and a timing chart showing oneembodiment of the present invention.

FIGS. 28A to 28E are a block diagram, circuit diagrams, and waveformdiagrams illustrating one embodiment of the present invention.

FIGS. 29A and 29B are a circuit diagram and a timing chart showing oneembodiment of the present invention.

FIGS. 30A and 30B are circuit diagrams illustrating one embodiment ofthe present invention.

FIGS. 31A to 31C are circuit diagrams each illustrating one embodimentof the present invention.

FIG. 32 illustrates a display module.

FIGS. 33A to 33E illustrate electronic devices.

FIGS. 34A to 34G illustrate electronic devices.

FIGS. 35A and 35B are perspective views illustrating a display device.

FIGS. 36A and 36B show I_(d)−V_(g) characteristics of transistors andshifts in threshold voltage.

FIG. 37 shows TDS analysis results.

FIGS. 38A to 38C show TDS analysis results.

FIGS. 39A to 39D show SIMS analysis results.

FIGS. 40A to 40I show TDS analysis results.

FIG. 41 shows TDS analysis results.

FIGS. 42A and 42B show TDS analysis results.

FIGS. 43A and 43B show electric resistances of IGZO films.

FIG. 44 shows TDS analysis results.

FIG. 45 is a cross-sectional view illustrating a semiconductor device.

FIGS. 46A to 46C are each a circuit diagram of a semiconductor device ofone embodiment of the present invention.

FIGS. 47A and 47B are each a circuit diagram of a semiconductor deviceof one embodiment of the present invention.

FIG. 48 is a block diagram illustrating a structure example of a CPU.

FIG. 49 is a circuit diagram illustrating an example of a memoryelement.

FIGS. 50A to 50F show drain current-gate voltage characteristics oftransistors of one embodiment of the present invention.

FIG. 51 shows GBT test results of transistors of one embodiment of thepresent invention.

FIGS. 52A to 52D show current stress characteristics of transistors ofone embodiment of the present invention.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments will be described with reference to drawings.However, the embodiments can be implemented in many different modes, andit will be readily appreciated by those skilled in the art that modesand details thereof can be changed in various ways without departingfrom the spirit and scope of the present invention. Thus, the presentinvention should not be interpreted as being limited to the followingdescription of the embodiments.

In the drawings, the size, the layer thickness, or the region isexaggerated for clarity in some cases. Therefore, embodiments of thepresent invention are not limited to such a scale. Note that thedrawings are schematic views showing ideal examples, and embodiments ofthe present invention are not limited to shapes or values shown in thedrawings.

Note that in this specification, ordinal numbers such as “first,”“second,” and “third” are used in order to avoid confusion amongcomponents, and the terms do not limit the components numerically.

Note that in this specification, terms for describing arrangement, suchas “over”, “above,” “under,” and “below,” are used for convenience indescribing a positional relation between components with reference todrawings. Furthermore, the positional relation between components ischanged as appropriate in accordance with a direction in which thecomponents are described. Thus, the positional relation is not limitedto that described with a term used in this specification and can beexplained with another term as appropriate depending on the situation.

In this specification and the like, a transistor is an element having atleast three terminals of a gate, a drain, and a source. In addition, thetransistor has a channel region between a drain (a drain terminal, adrain region, or a drain electrode) and a source (a source terminal, asource region, or a source electrode), and current can flow through thedrain region, the channel region, and the source region. Note that inthis specification and the like, a channel region refers to a regionthrough which current mainly flows.

Furthermore, functions of a source and a drain might be switched whentransistors having different polarities are employed or a direction ofcurrent flow is changed in circuit operation, for example. Therefore,the terms “source” and “drain” can be switched in this specification andthe like.

Note that in this specification and the like, the expression“electrically connected” includes the case where components areconnected through an “object having any electric function.” There is noparticular limitation on an “object having any electric function” aslong as electric signals can be transmitted and received betweencomponents that are connected through the object. Examples of an “objecthaving any electric function” are a switching element such as atransistor, a resistor, an inductor, a capacitor, and elements with avariety of functions as well as an electrode and a wiring.

In this specification and the like, the term “parallel” means that theangle formed between two straight lines is greater than or equal to −10°and less than or equal to 10°, and accordingly also covers the casewhere the angle is greater than or equal to −5° and less than or equalto 5°. The term “perpendicular” means that the angle formed between twostraight lines is greater than or equal to 80° and less than or equal to100°, and accordingly also covers the case where the angle is greaterthan or equal to 85° and less than or equal to 95°.

In this specification and the like, the terms “film” and “layer” can beinterchanged with each other. For example, the term “conductive layer”can be changed into the term “conductive film” in some cases.Furthermore, the term “insulating film” can be changed into the term“insulating layer” in some cases.

Unless otherwise specified, the off-state current in this specificationand the like refers to a drain current of a transistor in the off state(also referred to as non-conduction state and cutoff state). Unlessotherwise specified, the off state of an n-channel transistor means thata voltage (V_(gs)) between its gate and source is lower than thethreshold voltage (V_(th)), and the off state of a p-channel transistormeans that the gate-source voltage V_(gs) is higher than the thresholdvoltage V_(th). For example, the off-state current of an n-channeltransistor sometimes refers to a drain current that flows when thegate-source voltage V_(gs) is lower than the threshold voltage V_(th).

The off-state current of a transistor depends on V_(gs) in some cases.Thus, “the off-state current of a transistor is lower than or equal toI” may mean “there is V_(gs) with which the off-state current of thetransistor becomes lower than or equal to I.” Furthermore, “theoff-state current of a transistor” means “the off-state current in anoff state at predetermined V_(gs),” “the off-state current in an offstate at V_(gs) in a predetermined range” or “the off-state current inan off state at V_(gs) with which sufficiently reduced off-state currentis obtained,” for example.

As an example, the assumption is made of an n-channel transistor wherethe threshold voltage V_(th) is 0.5 V and the drain current is 1×10⁻⁹ Aat V_(gs) of 0.5 V, 1×10⁻¹³ A at V_(gs) of 0.1 V, 1×10⁻¹⁹ A at V_(gs) of−0.5 V, and 1×10⁻²² A at V_(gs) of −0.8 V. The drain current of thetransistor is 1×10⁻¹⁹ A or lower at V_(gs) of −0.5 V or at V_(gs) in therange of −0.8 V to −0.5 V; therefore, it can be said that the off-statecurrent of the transistor is 1×10⁻¹⁹ A or lower. Since there is V_(gs)at which the drain current of the transistor is 1×10⁻²²A or lower, itmay be said that the off-state current of the transistor is 1×10⁻²² A orlower.

In this specification and the like, the off-state current of atransistor with a channel width W is sometimes represented by a currentvalue in relation to the channel width W or by a current value per givenchannel width (e.g., 1 μm). In the latter case, the off-state currentmay be expressed in the unit with the dimension of current per length(e.g., A/_(μm).)

The off-state current of a transistor depends on temperature in somecases. Unless otherwise specified, the off-state current in thisspecification may be an off-state current at room temperature, 60° C.,85° C., 95° C., or 125° C. Alternatively, the off-state current may bean off-state current at a temperature at which the reliability requiredin a semiconductor device or the like including the transistor isensured or a temperature at which the semiconductor device or the likeincluding the transistor is used (e.g., temperature in the range of 5°C. to 35° C.). The description “an off-state current of a transistor islower than or equal to I” may refer to a situation where there is V_(gs)at which the off-state current of a transistor is lower than or equal toI at room temperature, 60° C., 85° C., 95° C., 125° C., a temperature atwhich the reliability required in a semiconductor device or the likeincluding the transistor is ensured, or a temperature at which thesemiconductor device or the like including the transistor is used (e.g.,temperature in the range of 5° C. to 35° C.).

The off-state current of a transistor depends on voltage V_(ds) betweenits drain and source in some cases. Unless otherwise specified, theoff-state current in this specification may be an off-state current atV_(ds) of 0.1 V, 0.8 V, 1 V, 1.2 V, 1.8 V, 2.5 V, 3 V, 3.3 V, 10 V, 12V, 16 V, or 20 V. Alternatively, the off-state current might be anoff-state current at V_(ds) at which the required reliability of asemiconductor device or the like including the transistor is ensured orV_(ds) at which the semiconductor device or the like including thetransistor is used. The description “an off-state current of atransistor is lower than or equal to I” may refer to a situation wherethere is V_(gs) at which the off-state current of a transistor is lowerthan or equal to I at V_(ds) of 0.1 V, 0.8 V, 1 V, 1.2 V, 1.8 V, 2.5 V,3 V, 3.3 V, 10 V, 12 V, 16 V, or 20 V, V_(ds) at which the requiredreliability of a semiconductor device or the like including thetransistor is ensured, or V_(ds) at which the semiconductor device orthe like including the transistor is used.

In the above description of off-state current, a drain may be replacedwith a source. That is, the off-state current sometimes refers to acurrent that flows through a source of a transistor in the off state.

In this specification and the like, the term “leakage current” sometimesexpresses the same meaning as off-state current. In this specificationand the like, the off-state current sometimes refers to a current thatflows between a source and a drain when a transistor is off, forexample.

In this specification and the like, the threshold voltage of atransistor refers to a gate voltage (V_(g)) at which a channel is formedin the transistor. Specifically, in a graph where the lateral axisrepresents the gate voltage (V_(g)) and the longitudinal axis representsthe square root of drain current (I_(d)), the threshold voltage of atransistor may refer to a gate voltage (V_(g)) at the intersection ofthe square root of drain current (I_(d)) of 0 (I_(d)=0 A) and anextrapolated straight line that is tangent with the highest inclinationto a plotted curve (V_(g)−√I_(d) characteristics). Alternatively, thethreshold voltage of a transistor may refer to a gate voltage (V_(g)) atwhich the value of I_(d)[A]×L/W [μm] is 1×10⁻⁹ [A] where L is channellength and W is channel width.

In this specification and the like, a “semiconductor” can havecharacteristics of an “insulator” when the conductivity is sufficientlylow, for example. Furthermore, a “semiconductor” and an “insulator”cannot be strictly distinguished from each other in some cases because aborder between the “semiconductor” and the “insulator” is not clear.Accordingly, a “semiconductor” in this specification and the like can becalled an “insulator” in some cases. Similarly, an “insulator” in thisspecification and the like can be called a “semiconductor” in somecases. An “insulator” in this specification and the like can be called a“semi-insulator” in some cases.

In this specification and the like, a “semiconductor” can havecharacteristics of a “conductor” when the conductivity is sufficientlyhigh, for example. Furthermore, a “semiconductor” and a “conductor”cannot be strictly distinguished from each other in some cases because aborder between the “semiconductor” and the “conductor” is not clear.Accordingly, a “semiconductor” in this specification and the like can becalled a “conductor” in some cases. Similarly, a “conductor” in thisspecification and the like can be called a “semiconductor” in somecases.

In this specification and the like, an impurity in a semiconductorrefers to an element that is not a main component of the semiconductorfilm. For example, an element with a concentration of lower than 0.1atomic % is an impurity. If a semiconductor contains an impurity, thedensity of states (DOS) may be formed therein, the carrier mobility maybe decreased, or the crystallinity may be decreased, for example. In thecase where the semiconductor includes an oxide semiconductor, examplesof the impurity which changes the characteristics of the semiconductorinclude Group 1 elements, Group 2 elements, Group 14 elements, Group 15elements, and transition metals other than the main components; specificexamples are hydrogen (also included in water), lithium, sodium,silicon, boron, phosphorus, carbon, and nitrogen. When the semiconductoris an oxide semiconductor, oxygen vacancies may be formed by entry ofimpurities such as hydrogen, for example. Furthermore, in the case wherethe semiconductor includes silicon, examples of the impurity whichchanges the characteristics of the semiconductor include oxygen, Group 1elements except hydrogen, Group 2 elements, Group 13 elements, and Group15 elements.

Embodiment 1

In this embodiment, a semiconductor device of one embodiment of thepresent invention that includes a gate insulating film having an excessoxygen region will be described. In addition, a method for manufacturinga semiconductor device of one embodiment of the present invention willbe described.

<1-1. Structure Example 1 of Semiconductor Device>

FIG. 1A is a top view of a transistor 100 of a semiconductor device ofone embodiment of the present invention. FIG. 1B is a cross-sectionalview taken along a dashed dotted line X1-X2 in FIG. 1A, and FIG. 1C is across-sectional view taken along a dashed dotted line Y1-Y2 in FIG. 1A.Note that some components of the transistor 100 (e.g., an insulatingfilm serving as a gate insulating film) are not illustrated in FIG. 1Ato avoid complexity. Furthermore, the direction of the dashed dottedline X1-X2 may be referred to as a channel length direction, and thedirection of the dashed dotted line Y1-Y2 may be referred to as achannel width direction. As in FIG. 1A, some components are notillustrated in some cases in top views of transistors described below.

The transistor 100 illustrated in FIGS. 1A to 1C is what is called atop-gate transistor.

The transistor 100 includes an insulating film 104 over a substrate 102,an oxide semiconductor film 108 over the insulating film 104, aninsulating film 110 over the oxide semiconductor film 108, a conductivefilm 112 over the insulating film 110, and an insulating film 116 overthe insulating film 104, the oxide semiconductor film 108, and theconductive film 112.

The oxide semiconductor film 108 preferably contains In, M (M is Al, Ga,Y, or Sn), and Zn.

The oxide semiconductor film 108 includes a first region 108 i thatoverlaps with the conductive film 112 and is in contact with theinsulating film 104 and the insulating film 110. The oxide semiconductorfilm 108 also includes a second region 108 n in contact with theinsulating film 116. The second region 108 n has a higher carrierdensity than the first region 108 i. This means that the oxidesemiconductor film 108 of one embodiment of the present inventionincludes two kinds of regions having different carrier densities.

Note that the carrier density of the first region 108 i is preferablyhigher than or equal to 1×10⁵ cm⁻³ and lower than 1×10¹⁸ cm⁻³, furtherpreferably higher than or equal to 1×10⁷ cm⁻³ and lower than or equal to1×10¹⁷ cm⁻³, still further preferably higher than or equal to 1×10⁹ cm⁻³and lower than or equal to 5×10¹⁶ cm⁻³, yet further preferably higherthan or equal to 1×10¹⁰ cm⁻³ and lower than or equal to 1×10¹⁶ cm⁻³, andyet still further preferably higher than or equal to 1×10¹¹ cm⁻³ andlower than or equal to 1×10¹⁵ cm⁻³.

Although an example where the oxide semiconductor film 108 is a singlelayer is mainly described with reference to FIGS. 1A to 1C and in modesfor carrying out embodiments of the present invention, the oxidesemiconductor film 108 may have a stacked-layer structure of films withdifferent carrier densities. For example, the oxide semiconductor film108 may have a two-layer structure including a first oxide semiconductorfilm and a second oxide semiconductor film over the first oxidesemiconductor film. By making the first oxide semiconductor film have ahigher carrier density than the second oxide semiconductor film, theoxide semiconductor film including regions with different carrierdensities can be formed.

The amount of oxygen vacancies or the impurity concentration in thefirst oxide semiconductor film is slightly higher than that in thesecond oxide semiconductor film.

To increase the carrier density of the first oxide semiconductor film,an element that forms oxygen vacancies may be added into the first oxidesemiconductor film so that hydrogen or the like is bonded to the oxygenvacancies. Typical examples of the element that forms oxygen vacanciesinclude hydrogen, boron, carbon, nitrogen, fluorine, phosphorus, sulfur,chlorine, and a rare gas element. Typical examples of the rare gaselement include helium, neon, argon, krypton, and xenon. Note that amongthe above-mentioned elements, nitrogen is particularly preferable as theelement that forms oxygen vacancies in the oxide semiconductor film.

By using an argon gas and a dinitrogen monoxide gas as deposition gasesin forming the first oxide semiconductor film, for example, a nitrogenelement can be contained in the first oxide semiconductor film. In thiscase, the first oxide semiconductor film includes a region having ahigher nitrogen concentration than the second oxide semiconductor film.

Accordingly, the first oxide semiconductor film has a higher carrierdensity and is of slightly n-type. An oxide semiconductor film having anincreased carrier density is described as “slightly-n oxidesemiconductor film,” in some cases.

In the case where the voltage applied to the gate of the transistor(V_(g)) is higher than 0 V and lower than or equal to 30 V, for example,the carrier density of the first oxide semiconductor film is preferablyhigher than 1×10¹⁶ cm⁻³ and lower than 1×10¹⁸ cm⁻³, and furtherpreferably higher than 1×10¹⁶ cm⁻³ and lower than or equal to 1×10¹⁷cm⁻³.

In the case where the carrier density of the first oxide semiconductorfilm is increased, the crystallinity of the first oxide semiconductorfilm might be lower than that of the second oxide semiconductor film. Inthis case, the oxide semiconductor film 108 has a stacked-layerstructure of a low-crystallinity oxide semiconductor film and ahigh-crystallinity oxide semiconductor film. The crystallinity of anoxide semiconductor film has a correlation to the film density of theoxide semiconductor film, and the oxide semiconductor film having highercrystallinity has a higher film density. Thus, the oxide semiconductorfilm 108 can be regarded to have a stacked-layer structure of an oxidesemiconductor film having a low film density and an oxide semiconductorfilm having a high film density.

Note that the crystallinity of the oxide semiconductor film 108 can bedetermined by analysis by X-ray diffraction (XRD) or with a transmissionelectron microscope (TEM), for example. The film density of the oxidesemiconductor film 108 can be measured with an X-ray reflectometer(XRR), for example.

The second region 108 n is in contact with the insulating film 116. Theinsulating film 116 contains nitrogen or hydrogen. Thus, nitrogen orhydrogen in the insulating film 116 is added to the second region 108 n.The carrier density of the second region 108 n is increased by theaddition of nitrogen or hydrogen from the insulating film 116.

The transistor 100 may further include an insulating film 118 over theinsulating film 116, a conductive film 120 a electrically connected tothe second region 108 n through an opening 141 a provided in theinsulating films 116 and 118, and a conductive film 120 b electricallyconnected to the second region 108 n through an opening 141 b providedin the insulating films 116 and 118.

In this specification and the like, the insulating film 104 may bereferred to as a first insulating film, the insulating film 110 may bereferred to as a second insulating film, the insulating film 116 may bereferred to as a third insulating film, and the insulating film 118 maybe referred to as a fourth insulating film. The conductive film 112functions as a gate electrode, the conductive film 120 a functions as asource electrode, and the conductive film 120 b functions as a drainelectrode.

The insulating film 110 functions as a gate insulating film.Furthermore, the insulating film 110 includes an excess oxygen regioncomprising a silicon oxynitride film. Since the insulating film 110 hasthe excess oxygen region, excess oxygen can be supplied to the firstregion 108 i of the oxide semiconductor film 108. In the presentinvention, oxygen is added to the insulating film 110 by oxygen plasmatreatment performed at a substrate temperature lower than or equal to300° C., preferably lower than or equal to 250° C., after the formationof the insulating film 110. Accordingly, a considerably larger amount ofexcess oxygen can be supplied from the insulating film 110 to the oxidesemiconductor film, as compared with the conventional case. Note that inone embodiment of the present invention, oxygen plasma treatment meansplasma treatment using oxygen. For example, a gas used in plasmatreatment may contain a gas other than oxygen that does not block aneffect of adding oxygen to a film. The gas used in plasma treatment maycontain, for example, oxygen at a flow rate percentage of 90% and argonat a flow rate percentage of 10%.

The insulating film 110 in one embodiment of the present invention has asingle-layer or stacked-layer structure including a silicon oxynitridefilm. When the insulating film 110 is analyzed by thermal desorptionspectroscopy (TDS), the highest peak of the amount of a released gaswith a mass-to-charge ratio M/z of 32, which corresponds to an oxygenmolecule, appears at a substrate temperature higher than or equal to150° C. and lower than or equal to 300° C., ideally higher than or equalto 150° C. and lower than or equal to 250° C., within a measurementtemperature range. Hereinafter, emission characteristics of oxygenmolecules analyzed by TDS are regarded as those of a gas with amass-to-charge ratio M/z of 32. A typical temperature range analyzed byTDS is from 80° C. to 500° C., and the analysis results at temperatureshigher than 500° C. are not regarded as the emission characteristics ofoxygen molecules. Oxygen vacancies formed in the first region 108 i arefilled with excess oxygen in the insulating film 110, whereby a highlyreliable semiconductor device can be provided. Note that in thedescription regarding TDS in this specification, substrate temperaturemeans substrate surface temperature.

As a conventional method for adding oxygen to a silicon oxynitride film,plasma treatment using an N₂O or NO₂ gas can be given. However, thepresent inventors have found that the number of electron trap centers isincreased when plasma treatment using an N₂O or NO₂ gas is performed onthe silicon oxynitride film. One of the factors is an increase innitrogen oxide (NO_(x)) in the silicon oxynitride film included in theinsulating film 110. To prevent a positive shift of the thresholdvoltage of the transistor 100 when a bias-temperature stress test (BTtest) is conducted, particularly when positive bias stress is applied tothe gate electrode, plasma treatment using an N₂O or NO₂ gas that causesan increase in nitrogen oxide (NO_(x)) should not be performed. Thus,oxygen plasma treatment performed after the formation of the insulatingfilm 110, which is one embodiment of the present invention, iseffective.

The oxide semiconductor film 108 preferably has a region in which theatomic proportion of In is larger than the atomic proportion of M. Whenthe oxide semiconductor film 108 has a region in which the atomicproportion of In is larger than the atomic proportion of M, thetransistor 100 can have high field-effect mobility. Specifically, thefield-effect mobility of the transistor 100 can exceed 10 cm²/Vs,preferably exceed 30 cm²/Vs.

The use of the transistor with high field-effect mobility in a gatedriver that generates a gate signal (specifically, a demultiplexerconnected to an output terminal of a shift register included in the gatedriver), for example, allows a semiconductor device or a display deviceto have a narrow frame.

When oxygen vacancies are formed in the oxide semiconductor film 108,the oxygen vacancies are bonded to hydrogen to serve as carrier supplysources. The carrier supply sources generated in the oxide semiconductorfilm 108 cause a change in the electrical characteristics, typified by ashift in the threshold voltage, of the transistor 100 including theoxide semiconductor film 108. Therefore, it is preferable that theamount of oxygen vacancies in the oxide semiconductor film 108,particularly in the first region 108 _(i), be as small as possible.

Oxygen vacancies formed in the first region 108 i can be filled withexcess oxygen supplied from the insulating film 110. Thus, the firstregion 108 i of the oxide semiconductor film 108 has a low impurityconcentration and a low density of defect states. Note that a filmhaving a low impurity concentration and a low density of defect states(or a small amount of oxygen vacancies) is referred to as a “highlypurified intrinsic film” or a “substantially highly purified intrinsicfilm.” A highly purified intrinsic or substantially highly purifiedintrinsic oxide semiconductor film has few carrier generation sources,and thus can have a low carrier density. Thus, a transistor in which achannel region is formed in the oxide semiconductor film rarely has anegative threshold voltage (is rarely normally on).

A highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film has a low density of defect states andaccordingly has a low density of trap states in some cases. Furthermore,a highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film has an extremely low off-state current; evenwhen an element has a channel width of 1×10⁶ μm and a channel length Lof 10 μm, the off-state current can be less than or equal to themeasurement limit of a semiconductor parameter analyzer, that is, lessthan or equal to 1×10⁻¹³ A, at a voltage between a source electrode anda drain electrode (drain voltage) of from 0.1 V to 10 V.

A transistor 100A illustrated in FIGS. 2A to 2C is different from thetransistor 100 illustrated in FIGS. 1A to 1C in that a conductive film106 is provided over the substrate 102. In the transistor illustrated inFIGS. 2A to 2C, the conductive film 112 and the conductive film 106 canbe used as gate electrodes.

FIG. 36A shows the I_(d)−V_(g) characteristics of a transistor 201, atransistor 202, and a transistor 203 each having the structureillustrated in FIGS. 2A to 2C and using the conductive films 112 and 106as gate electrodes at the same potential. The transistors 201 to 203were obtained by changing the conditions after the formation of theinsulating film 110. The I_(d)−V_(g) characteristics were measured underthe following conditions: the substrate temperature was at roomtemperature, I_(d) was 0.1 V and 10 V, and V_(g) was changed from −15 Vto +20 V. FIG. 36A shows the I_(d)−V_(g) characteristics of thetransistors obtained under conditions 206 and conditions 207. In theconditions 206, the channel length L was 2 μm and the channel width Wwas 50 μm. In the conditions 207, the channel length L was 6 μm and thechannel width W was 50 μm. The I_(d)−V_(g) characteristics were measuredusing the conductive films 112 and 106 as gate electrodes. Thecharacteristics at I_(d) of 0.1 V and 10 V are overwritten, and themeasurement results of a plurality of transistors on a specific surfaceof a substrate are overwritten.

The insulating films 110 in the transistor 201, the transistor 202, andthe transistor 203 are formed using silicon oxynitride under the sameconditions. In the transistor 201, no N₂O plasma treatment or oxygenplasma treatment was performed after the formation of the insulatingfilm 110, and the conductive film 112 was formed. In the transistor 202,N₂O plasma treatment was performed after the formation of the insulatingfilm 110, and the conductive film 112 was formed. In the transistor 203,oxygen plasma treatment was performed after the formation of theinsulating film 110, and the conductive film 112 was formed. After theformation of the conductive film 112, the insulating film 110 in each ofthe transistor 201, the transistor 202, and the transistor 203 wassubjected to heat treatment at a temperature not higher than 250° C.

In the I−V_(g) characteristics of the transistor 201, the thresholdvoltage largely shifts in the negative direction. In contrast, in theI_(d)−V_(g) characteristics of the transistor 202 and the transistor203, the threshold voltage is around 0 V. This suggests that N₂O plasmatreatment or oxygen plasma treatment performed after the formation ofthe insulating film 110 is effective in increasing excess oxygen in theinsulating film 110.

FIG. 36B shows the results of the BT tests conducted on the transistor202 and the transistor 203. The longitudinal axis represents the amountof shift in threshold voltage (ΔV_(th)) in the I_(d)−V_(g)characteristics, where the unit is V. The channel length L and thechannel width W of each of the transistors subjected to the BT testswere 3 μm and 50 μm, respectively. The BT tests were conducted in anenvironment irradiated with white LED light with an illuminance of 100001× or in a dark environment, for 60 minutes at a gate bias of +30 V or−30 V. That is, four types of BT tests were conducted: a positive gatebias temperature stress (PBTS) test, a negative gate bias temperaturestress (NBTS) test, a positive gate bias illumination temperature stress(PBITS) test, and a negative gate bias illumination temperature stress(NBITS) test. The substrate temperature during the BT tests and duringthe measurement of the I_(d)−V_(g) characteristics was set at 60° C.

The results of the BT tests show that a shift in the threshold voltageof the transistor 202 due to the positive gate bias temperature stress(PBTS) test was approximately +8 V, and a shift in the threshold voltageof the transistor 203 due to the positive gate bias temperature stress(PBTS) test was approximately +2 V. This indicates that the transistor202 contains more nitrogen oxide (NO_(x)) serving as electron trapcenters than the transistor 203, in the silicon oxynitride film includedin the insulating film 110.

As described above, in the semiconductor device of one embodiment of thepresent invention, a gate insulating film is formed over an oxidesemiconductor layer. Note that the gate insulating film can supplyexcess oxygen to an oxide semiconductor film while an increase innitrogen oxide (NO_(x)) in a silicon oxynitride film included in thegate insulating film is prevented. Thus, a sufficient amount of oxygenis supplied to the oxide semiconductor layer, whereby oxygen vacanciesin the oxide semiconductor layer can be reduced and the reliability of atransistor can be improved. Accordingly, a highly reliable semiconductordevice can be provided.

<1-2. Components of Semiconductor Device>

Next, components of the semiconductor device of this embodiment will bedescribed in detail.

[Substrate]

There is no particular limitation on the property of a material and thelike of the substrate 102 as long as the material has heat resistanceenough to withstand at least heat treatment to be performed later. Forexample, a glass substrate, a ceramic substrate, a quartz substrate, asapphire substrate, or the like may be used as the substrate 102.Alternatively, a single crystal semiconductor substrate or apolycrystalline semiconductor substrate of silicon or silicon carbide, acompound semiconductor substrate of silicon germanium, an SOI substrate,or the like can be used, or any of these substrates provided with asemiconductor element may be used as the substrate 102. In the casewhere a glass substrate is used as the substrate 102, a glass substratehaving any of the following sizes can be used: the 6th generation (1500mm×1850 mm), the 7th generation (1870 mm×2200 mm), the 8th generation(2200 mm×2400 mm), the 9th generation (2400 mm×2800 mm), and the 10thgeneration (2950 mm×3400 mm). Thus, a large-sized display device can befabricated.

Alternatively, a flexible substrate may be used as the substrate 102,and the transistor 100 may be provided directly on the flexiblesubstrate. Alternatively, a separation layer may be provided between thesubstrate 102 and the transistor 100. The separation layer can be usedwhen part or the whole of a semiconductor device formed over theseparation layer is separated from the substrate 102 and transferredonto another substrate. In such a case, the transistor 100 can betransferred to a substrate having low heat resistance or a flexiblesubstrate as well.

[First Insulating Film]

The insulating film 104 can be formed by a sputtering method, a CVDmethod, an evaporation method, a pulsed laser deposition (PLD) method, aprinting method, a coating method, or the like as appropriate. Forexample, the insulating film 104 can be formed to have a single-layerstructure or stacked-layer structure of an oxide insulating film and/ora nitride insulating film. To improve the properties of the interfacewith the oxide semiconductor film 108, at least a region of theinsulating film 104 which is in contact with the oxide semiconductorfilm 108 is preferably formed using an oxide insulating film. When theinsulating film 104 is formed using an oxide insulating film from whichoxygen is released by heating, oxygen contained in the insulating film104 can be moved to the oxide semiconductor film 108 by heat treatment.

The thickness of the insulating film 104 can be greater than or equal to50 nm, greater than or equal to 100 nm and less than or equal to 3000nm, or greater than or equal to 200 nm and less than or equal to 1000nm. By increasing the thickness of the insulating film 104, the amountof oxygen released from the insulating film 104 can be increased, andinterface states at the interface between the insulating film 104 andthe oxide semiconductor film 108 and oxygen vacancies included in theoxide semiconductor film 108 can be reduced.

For example, the insulating film 104 can be formed to have asingle-layer structure or stacked-layer structure of silicon oxide,silicon oxynitride, silicon nitride oxide, silicon nitride, aluminumoxide, hafnium oxide, gallium oxide, a Ga—Zn oxide, or the like. In thisembodiment, the insulating film 104 has a stacked-layer structure of asilicon nitride film and a silicon oxynitride film. With the insulatingfilm 104 having such a stacked-layer structure including a siliconnitride film as a lower layer and a silicon oxynitride film as an upperlayer, oxygen can be efficiently introduced into the oxide semiconductorfilm 108.

[Conductive Film]

The conductive film 112 functioning as a gate electrode and theconductive films 120 a and 120 b functioning as a source electrode and adrain electrode can each be formed using a metal element selected fromchromium (Cr), copper (Cu), aluminum (Al), gold (Au), silver (Ag), zinc(Zn), molybdenum (Mo), tantalum (Ta), titanium (Ti), tungsten (W),manganese (Mn), nickel (Ni), iron (Fe), and cobalt (Co); an alloyincluding any of these metal elements as its component; an alloyincluding a combination of any of these metal elements; or the like.

Furthermore, the conductive films 112, 120 a, and 120 b can be formedusing an oxide conductor or an oxide semiconductor, such as an oxideincluding indium and tin (In—Sn oxide), an oxide including indium andtungsten (In—W oxide), an oxide including indium, tungsten, and zinc(In—W—Zn oxide), an oxide including indium and titanium (In—Ti oxide),an oxide including indium, titanium, and tin (In—Ti—Sn oxide), an oxideincluding indium and zinc (In—Zn oxide), an oxide including indium, tin,and silicon (In—Sn—Si oxide), or an oxide including indium, gallium, andzinc (In—Ga—Zn oxide).

Here, an oxide conductor is described. In this specification and thelike, an oxide conductor may be referred to as OC. For example, theoxide conductor is obtained in the following manner. Oxygen vacanciesare formed in an oxide semiconductor, and then hydrogen is added to theoxygen vacancies, so that a donor level is formed in the vicinity of theconduction band. This increases the conductivity of the oxidesemiconductor; accordingly, the oxide semiconductor becomes a conductor.The oxide semiconductor having become a conductor can be referred to asan oxide conductor. Oxide semiconductors generally transmit visiblelight because of their large energy gap. Since an oxide conductor is anoxide semiconductor having a donor level in the vicinity of theconduction band, the influence of absorption due to the donor level issmall in an oxide conductor, and an oxide conductor has a visible lighttransmitting property comparable to that of an oxide semiconductor.

In particular, the above-described oxide conductor is favorably used asthe conductive film 112 because excess oxygen can be added to theinsulating film 110.

A Cu—X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be usedfor the conductive films 112, 120 a, and 120 b. The use of a Cu—X alloyfilm results in lower manufacturing costs because the film can beprocessed by wet etching.

Among the above-mentioned metal elements, any one or more elementsselected from titanium, tungsten, tantalum, and molybdenum arepreferably included in the conductive films 112, 120 a, and 120 b. Inparticular, a tantalum nitride film is preferably used for theconductive films 112, 120 a, and 120 b. A tantalum nitride film hasconductivity and a high barrier property against copper or hydrogen.Because a tantalum nitride film releases little hydrogen from itself, itcan be favorably used as the conductive film in contact with the oxidesemiconductor film 108 or the conductive film in the vicinity of theoxide semiconductor film 108.

The conductive films 112, 120 a, and 120 b can be formed by electrolessplating. As a material that can be deposited by electroless plating, forexample, one or more elements selected from Cu, Ni, Al, Au, Sn, Co, Ag,and Pd can be used. It is further favorable to use Cu or Ag because theelectric resistance of the conductive film can be reduced.

[Second Insulating Film]

The insulating film 110 functioning as the gate insulating film of thetransistor 100, which is one embodiment of the present invention, has asingle-layer structure or a stacked-layer structure including a siliconoxynitride film formed by a plasma-enhanced chemical vapor depositionmethod. The insulating film 110 is subjected to oxygen plasma treatment.

When the insulating film 110 in one embodiment of the present inventionis analyzed by TDS, the highest peak of the amount of a released gaswith a mass-to-charge ratio M/z of 32, which corresponds to an oxygenmolecule, appears at a substrate temperature higher than or equal to150° C. and lower than or equal to 300° C., within a measurementtemperature range. Hereinafter, the characteristics of the insulatingfilm 110 in one embodiment of the present invention, that is, a siliconoxynitride film subjected to oxygen plasma treatment, will be describedwith reference to FIG. 37, FIGS. 38A to 38C, FIGS. 39A to 39D, FIGS. 40Ato 40I, FIG. 41, FIGS. 42A and 42B, FIGS. 43A and 43B, and FIG. 44.

Excess oxygen atoms in the silicon oxynitride film are released bythermal excitation. Note that a temperature at which the atoms arereleased depends on the bonding state of atoms or the like in the film.Many oxygen atoms in the silicon oxynitride film are released over awide temperature range. Thus, when excess oxygen atoms are added to thesilicon oxynitride film at low temperatures and then oxygen atoms aresupplied to the oxide semiconductor film at high temperatures, a largeamount of oxygen atoms can be supplied to the oxide semiconductor film.

In the case of using a plasma-enhanced chemical vapor deposition method(PECVD method), a silicon oxynitride film formed at high substratetemperatures has a high density, high electrical insulation withstandvoltage characteristics, and high chemical resistance. According tothese advantages, in the case where the silicon oxynitride film is usedin a semiconductor element, substrate temperature is desirably highduring the formation of the silicon oxynitride film. At the same time,in the case of using a silicon oxynitride film as a gate insulating filmof a transistor that uses an oxide semiconductor in a channel, it isimportant to supply excess oxygen atoms in the silicon oxynitride filmto an oxide semiconductor film more effectively for increasingreliability.

To increase the amount of excess oxygen atoms, in this embodiment,oxygen plasma treatment is performed on a silicon oxynitride film afterthe formation of the silicon oxynitride film. The oxygen plasmatreatment is performed at a substrate temperature lower than or equal to350° C., preferably lower than or equal to 250° C. To increase theamount of excess oxygen atoms in the silicon oxynitride film, thesubstrate temperature during the formation of the film is lowered.

Note that more oxygen can be supplied to the oxide semiconductor film bychanging the conditions of the oxygen plasma treatment performed on thesilicon oxynitride film; an example of such a case is described below.FIG. 37 shows the measurement results of the amount of a released gaswith a mass-to-charge ratio M/z of 32, which corresponds to an oxygenmolecule, when samples described below were analyzed by TDS. For eachsample, a 100-nm-thick silicon oxynitride film was formed over anon-alkali glass substrate, and then oxygen plasma treatment wasperformed on the silicon oxynitride film. In TDS analysis, the amount ofreleased oxygen molecules was determined using data within the substratetemperature range from 80° C. to 450° C. A gas used for the oxygenplasma treatment was only oxygen. The silicon oxynitride film was formedusing an SiH₄ gas and an N₂O gas by a plasma CVD method at a substratetemperature of 350° C. The substrate temperature during the oxygenplasma treatment was 350° C.

FIG. 37 indicates that, within a range from 40 Pa to 250 Pa, the smallerthe pressure during the oxygen plasma treatment is, or the higher thedischarge power is, the more excess oxygen atoms are released as oxygenmolecules from the silicon oxynitride film.

FIGS. 38A to 38C show the measurement results of the amount of areleased gas with a mass-to-charge ratio M/z of 18, which corresponds toa water molecule, when samples described below were analyzed by TDS.FIG. 38A shows the results of a sample 221, FIG. 38B shows the resultsof a sample 222, and FIG. 38C shows the results of a sample 223. Foreach sample, a 100-nm-thick IGZO film was formed over a non-alkali glasssubstrate, and then a 100-nm-thick silicon oxynitride film was formed.The silicon oxynitride film was formed using an SiH₄ gas and an N₂O gasby a plasma CVD method at a substrate temperature of 350° C. After that,oxygen plasma treatment was performed on the silicon oxynitride film ata discharge power of 500 W in the sample 222 and a discharge power of3000 W in the sample 223. The longitudinal axis represents the intensityof a signal showing the released amount.

The IGZO film in each sample for TDS analysis was formed by sputteringusing an oxide as a target. An atomic ratio of indium to gallium andzinc in the target was 4:2:4.1. During the formation of the IGZO film,the substrate temperature was 130° C., the flow rate ratio of the gaswas Ar:O₂=9:1, and the pressure was 0.6 Pa.

The results in FIGS. 38A to 38C show that the sample 221 releases thelargest amount of water molecules at around 120° C., followed by thesample 222. The sample 223 releases a small amount of water molecules ataround 120° C. One of the factors is probably that the oxygen plasmatreatment performed on the silicon oxynitride film reduced wateradsorbed on a surface.

FIGS. 39A and 39B each show the measurement results of the hydrogenconcentration in the sample 221, the sample 222, and the sample 223obtained by secondary ion mass spectrometry (SIMS). In SIMS, profileswere measured from the substrate side toward a surface of the siliconoxynitride film. An arrow 220 indicates the direction of the profilemeasurements. FIGS. 39A to 39D show a profile 216 in the siliconoxynitride film, a profile 217 in the IGZO film, and a profile 218 inthe substrate.

FIG. 39A shows the SIMS results of the hydrogen concentration in thesilicon oxynitride films, which were obtained by varying the dischargepower of oxygen plasma treatment. FIG. 39B shows the SIMS results of thehydrogen concentration in the IGZO films, which was obtained in asimilar manner. The sample 221 was fabricated without oxygen plasmatreatment, the sample 222 was fabricated with oxygen plasma treatmentperformed at a discharge power of 500 W, and the sample 223 wasfabricated with oxygen plasma treatment performed at a discharge powerof 3000 W.

The lateral axis in each graph in FIGS. 39A to 39D represents the depthdirection which is perpendicular to the film surface. Note that 0 nm onthe lateral axis indicates the position used for the SIMS measurementfor convenience, and a region 225 corresponds to the results obtained ata position around the surface of the silicon oxynitride film. In FIG.39A, the hydrogen concentration in the region 225 is lower in the sample222 and the sample 223 obtained with oxygen plasma treatment than in thesample 221 obtained without oxygen plasma treatment. The above resultssuggest that the oxygen plasma treatment performed on the siliconoxynitride film probably reduced water adsorbed on the surface and thus,the released amounts of water molecules at around 120° C. are differentfrom each other in FIGS. 38A to 38C.

In FIG. 39B, the hydrogen concentration is reduced in the IGZO filmsubjected to the oxygen plasma treatment. The larger the discharge poweris, the more the hydrogen concentration of the IGZO film is reduced.Oxygen plasma treatment performed on the silicon oxynitride film iseffective in reducing the hydrogen concentration not only on the surfaceof the silicon oxynitride film, but also in the IGZO film, that is, theoxide semiconductor film.

FIGS. 39C and 39D each show the measurement results of the hydrogenconcentration in a sample 226, a sample 227, and a sample 228 obtainedby SIMS. The sample 226 is a sample in which oxygen plasma treatment wasnot performed on a silicon oxynitride film, that is, a sample fabricatedunder the same conditions as the sample 221. The sample 227 is a samplefabricated through the fabrication process of the sample 226, exceptthat oxygen plasma treatment was performed in a chamber at a gaspressure of 200 Pa. The sample 228 is a sample fabricated through thefabrication process of the sample 226, except that oxygen plasmatreatment was performed in a chamber at a gas pressure of 40 Pa. FIG.39C shows the quantified measurement results of the hydrogenconcentration in the silicon oxynitride film, and FIG. 39D shows thequantified measurement results of the hydrogen concentration in the IGZOfilm. Within a range of the gas pressure in a chamber during the oxygenplasma treatment, which is from 40 Pa to 200 Pa, the hydrogenconcentration in the oxide semiconductor film can be reduced as thepressure becomes lower.

FIGS. 40A to 40I show the measurement results of the amount of areleased gas with a mass-to-charge ratio M/z of 32, which corresponds toan oxygen molecule, when samples described below were analyzed by TDS.For each sample, a 100-nm-thick IGZO film was formed over a non-alkaliglass substrate, and then a 100-nm-thick silicon oxynitride film wasformed. The silicon oxynitride film was formed using an SiH₄ gas and anN₂O gas by a plasma CVD method at a substrate temperature of 350° C.Furthermore, oxygen plasma treatment was performed in a chamber at a gaspressure of 200 Pa with a discharge power of 3000 W.

The samples for the TDS analysis were subjected to oxygen plasmatreatment for different periods of time. FIG. 40A shows the results ofthe case for 30 seconds, FIG. 40B shows the results of the case for 60seconds, FIG. 40C shows the results of the case for 100 seconds, FIG.40D shows the results of the case for 300 seconds, and FIG. 40E showsthe results of the case for 600 seconds. These are the results obtainedby performing oxygen plasma treatment at a substrate temperature of 220°C. FIG. 40F shows the results of the case for 30 seconds, FIG. 40G showsthe results of the case for 60 seconds, FIG. 40H shows the results ofthe case for 100 seconds, and FIG. 40I shows the results of the case for300 seconds. These are the results obtained by performing oxygen plasmatreatment at a substrate temperature of 350° C.

FIGS. 40A to 40I show that the longer the time of the oxygen plasmatreatment performed on the silicon oxynitride film is, the larger thereleased amount of oxygen is. FIGS. 40A to 40I also show that the lowerthe substrate temperature during the oxygen plasma treatment is, thelarger the released amount of oxygen is.

FIG. 41 shows the released amounts of oxygen shown in FIGS. 40A to 40I,where the lateral axis represents time of oxygen plasma treatment andthe longitudinal axis represents the released amount of oxygen. A dashedline 231 indicates values obtained from the results in FIGS. 40A to 40E,which were obtained by performing oxygen plasma treatment at a substratetemperature of 220° C. A solid line 232 indicates values obtained fromthe results in FIGS. 40F to 40I, which were obtained by performingoxygen plasma treatment at a substrate temperature of 350° C. In thecase of performing oxygen plasma treatment at a substrate temperature of350° C., the released amount of oxygen is saturated at less than 2×10¹⁴molecules/cm² as oxygen plasma treatment time is prolonged. Meanwhile,in the case of performing oxygen plasma treatment at a substratetemperature of 220° C., the released amount of oxygen is not saturatedat least at 1.2×10¹⁵ molecules/cm² as oxygen plasma treatment time isprolonged. Accordingly, to increase the released amount of oxygen, it ismore desirable to perform oxygen plasma treatment at a substratetemperature of 220° C. than at a substrate temperature of 350° C.

FIGS. 42A and 42B show the amount of a released gas with amass-to-charge ratio M/z of 32, which corresponds to an oxygen molecule,when samples were analyzed by TDS. For each of the samples, a100-nm-thick silicon oxynitride film was formed over a non-alkali glasssubstrate, and then oxygen plasma treatment was performed on the siliconoxynitride film. The silicon oxynitride film was formed using an SiH₄gas and an N₂O gas by a plasma CVD method. FIG. 42A shows the results ofthe case where the silicon oxynitride film was formed at 350° C. Thetotal amount of oxygen released within a measurement temperature rangefrom 80° C. to 450° C. is 5.17×10¹⁴ molecules/cm². FIG. 42B shows theresults of the case where the silicon oxynitride film was formed at 220°C. The total amount of oxygen released within a measurement temperaturerange from 80° C. to 450° C. is 1.47×10¹⁵ molecules/cm².

One of the reasons that makes the results in FIG. 42A and the results inFIG. 42B different from each other is as follows. The silicon oxynitridefilm formed at low temperatures (i.e., 220° C.) has a low film densityand contains many vacancies. Excess oxygen might be added to thevacancies; thus, the silicon oxynitride film has potential of absorbingor supplying a larger amount of excess oxygen.

As described above, in order to supply excess oxygen from a siliconoxynitride film to an oxide semiconductor film, it is effective toperform oxygen plasma treatment on the silicon oxynitride film at lowsubstrate temperatures (a temperature lower than or equal to 350° C.,e.g., 220° C.), increase discharge power, reduce the pressure in achamber during discharging, increase the time for the oxygen plasmatreatment, or decrease the formation temperature of the siliconoxynitride film. It is also effective to increase the thickness of thesilicon oxynitride film as long as the silicon oxynitride film is formedso as to be an excess oxygen supply source.

However, when a silicon oxynitride film is formed over an oxidesemiconductor film by a plasma CVD method, the electric resistance ofthe oxide semiconductor film might be decreased depending on theformation conditions. FIGS. 43A and 43B show the electric resistance ofIGZO films in samples. For each of the samples, a 50-nm-thick IGZO filmwas formed over a quartz glass substrate, and a silicon oxynitride filmwas formed thereover. In each sample, the substrate was a square with aside of 1 cm, 2-mm-square regions of the silicon oxynitride film wereremoved at four corners, and 2-mm-square electrodes electricallyconnected to the IGZO film were formed. These electrodes were used asterminals and the electric resistance (unit: Ω) between adjacentelectrodes was measured.

The silicon oxynitride films were formed using an SiH₄ gas and an N₂Ogas by a plasma CVD method. The thicknesses of the silicon oxynitridefilms were varied between 0 nm (i.e., the film was not formed) and 60nm. In each of the samples whose results were shown in FIG. 43A, thesilicon oxynitride film was formed at a substrate temperature of 350° C.In each of the samples whose results were shown in FIG. 43B, the siliconoxynitride film was formed at a substrate temperature of 220° C. Adashed line 235 in each of FIGS. 43A and 43B indicates the electricresistance of the IGZO film before the formation of the siliconoxynitride film.

When the silicon oxynitride film is formed by a plasma CVD method,hydrogen due to a hydrogen plasma atmosphere in a chamber might bediffused to the IGZO film and oxygen vacancies and hydrogen or the likemight be bonded to each other, which results in a decrease in theelectric resistance of the silicon oxynitride film. The decrease in theelectric resistance of the silicon oxynitride film occurs moresignificantly at a substrate temperature of 350° C. shown in FIG. 43Athan at a substrate temperature of 220° C. shown in FIG. 43B. This isprobably because hydrogen diffusion into the IGZO film and bondingbetween oxygen vacancies and hydrogen or the like are improved as thesubstrate temperature becomes higher. From this point of view, substratetemperature is desirably low when a silicon oxynitride film is formed bya plasma CVD method.

The present inventors fabricated display devices each including an oxidesemiconductor film and a silicon oxynitride film subjected to oxygenplasma treatment, to demonstrate the effect of oxygen plasma treatment.The display devices were disassembled, and transistors obtained byremoving pixel electrodes from the display devices were analyzed by TDS.FIG. 44 shows the results of the amount of a released gas with amass-to-charge ratio M/z of 32, which corresponds to an oxygen molecule.An organic resin was removed from each measured sample. A sample 241 wasfabricated without oxygen plasma treatment after the formation of asilicon oxynitride film. A sample 242 was obtained by performing oxygenplasma treatment for 120 seconds. A sample 243 was obtained byperforming oxygen plasma treatment for 600 seconds. Although each of thedisplay devices had a structure different from that of one embodiment ofthe present invention, the silicon oxynitride film was provided over anIGZO film, and the maximum process temperature after the formation ofthe silicon oxynitride film or the oxygen plasma treatment was 250° C.

Meanwhile, a commercially available display device, which was differentfrom one embodiment of the present invention, having an oxidesemiconductor film and a gate insulating film including a siliconoxynitride film was disassembled to prepare a sample 244 from which apixel electrode was removed. FIG. 44 shows the results of the amount ofa released gas with a mass-to-charge ratio M/z of 32, which correspondsto an oxygen molecule, obtained by analyzing the sample 244 by TDS.

As for the sample 241 in which the silicon oxynitride film was notsubjected to oxygen plasma treatment, the highest peak appears at atemperature lower than or equal to 150° C., within the measurementtemperature range of TDS. As for each of the sample 242 and the sample243 in which the silicon oxynitride film was subjected to oxygen plasmatreatment, the highest peak appears at a temperature between 150° C. and350° C., within the measurement temperature range. In contrast, as forthe sample obtained from the commercially available display device,which was different from one embodiment of the present invention, thehighest peak appears at a temperature between 350° C. and 450° C.,within the measurement temperature range. Accordingly, the sampleobtained from the commercially available display device can bedistinguished from the samples in each of which the silicon oxynitridefilm was subjected to oxygen plasma treatment by the sample temperatureat which the highest peak appears.

The silicon oxynitride film subjected to oxygen plasma treatmentcontains excess oxygen sufficiently. Thus, even when the siliconoxynitride film subjected to oxygen plasma treatment, which is a featureof the present invention, is analyzed by TDS after oxygen is suppliedfrom the silicon oxynitride film to an oxide semiconductor film by heattreatment performed in any step after the oxygen plasma treatment and asemiconductor device or a display device is completed, the highest peakof the amount of a released gas with a mass-to-charge ratio M/z of 32,which corresponds to an oxygen molecule, appears at a temperaturebetween 150° C. and 350° C., within the measurement temperature range.The conductivity of an oxide semiconductor film of a transistor includedin the completed semiconductor device or display device is decreasedwhen heat treatment in the above temperature range is performed.

In a manufacturing process of the transistor, heat treatment performedat a temperature higher than or equal to 150° C., preferably higher thanor equal to 200° C., further preferably higher than or equal to 250° C.,after oxygen plasma treatment is performed on the silicon oxynitridefilm can supply oxygen to the oxide semiconductor film. The heattreatment is preferably performed at a temperature lower than or equalto 450° C. because when heat treatment is performed at a temperaturehigher than 450° C., depending on the atmosphere, oxygen in the oxidesemiconductor film is bonded to hydrogen and is released as water.Furthermore, in the case where a film containing a metal material isformed, the film absorbs oxygen in the oxide semiconductor film; thus,also in such a case, the upper temperature limit of the heat treatmentis set as appropriate.

The insulating film 110 may have, instead of the single-layer structureof the silicon oxynitride film, a stacked-layer structure of two layersor three or more layers of insulating layers formed by a plasma-enhancedchemical vapor deposition method, a sputtering method, or the like. Theinsulating layers include one or more of a silicon oxide film, a siliconoxynitride film, a silicon nitride oxide film, a silicon nitride film,an aluminum oxide film, a hafnium oxide film, an yttrium oxide film, azirconium oxide film, a gallium oxide film, a tantalum oxide film, amagnesium oxide film, a lanthanum oxide film, a cerium oxide film, and aneodymium oxide film.

The insulating film 110 that is in contact with the oxide semiconductorfilm 108 functioning as a channel region of the transistor 100 ispreferably an oxide insulating film and preferably includes a regioncontaining oxygen in excess of the stoichiometric composition(oxygen-excess region). In other words, the insulating film 110 is aninsulating film capable of releasing oxygen. In order to provide theoxygen-excess region in the insulating film 110, the insulating film 110is formed in an oxygen atmosphere, or the deposited insulating film 110is subjected to heat treatment in an oxygen atmosphere, for example.

In the case of using a stacked-layer structure containing hafnium oxidefor the insulating film 110, the following effects are attained. Hafniumoxide has higher dielectric constant than silicon oxide and siliconoxynitride. Therefore, by using hafnium oxide, the thickness of theinsulating film 110 can be made large as compared with the case of usingsilicon oxide; thus, leakage current due to tunnel current can be low.That is, it is possible to provide a transistor with a low off-statecurrent. Moreover, hafnium oxide having a crystal structure has a higherdielectric constant than hafnium oxide having an amorphous structure.Therefore, it is preferable to use hafnium oxide having a crystalstructure, in order to obtain a transistor with a low off-state current.Examples of the crystal structure include a monoclinic crystal structureand a cubic crystal structure. Note that one embodiment of the presentinvention is not limited to the above examples.

It is preferable that the insulating film 110 have few defects andtypically have as few signals observed by electron spin resonance (ESR)spectroscopy as possible. Examples of the signals include a signal dueto an E′ center observed at a g-factor of 2.001. Note that the E′ centeris due to the dangling bond of silicon. As the insulating film 110, asilicon oxide film or a silicon oxynitride film whose spin density of asignal due to the E′ center is lower than or equal to 3×10¹⁷ spins/cm³and preferably lower than or equal to 5×10¹⁶ spins/cm³ may be used.

In addition to the above-described signal, a signal due to nitrogendioxide (NO₂) might be observed in the insulating film 110. The signalis divided into three signals according to the N nuclear spin; a firstsignal, a second signal, and a third signal. The first signal isobserved at a g-factor of greater than or equal to 2.037 and less thanor equal to 2.039. The second signal is observed at a g-factor ofgreater than or equal to 2.001 and less than or equal to 2.003. Thethird signal is observed at a g-factor of greater than or equal to 1.964and less than or equal to 1.966.

It is suitable to use an insulating film whose spin density of a signaldue to nitrogen dioxide (NO₂) is higher than or equal to 1×10¹⁷spins/cm³ and lower than 1×10¹⁸ spins/cm³ as the insulating film 110,for example.

Note that a nitrogen oxide (NO_(x)) such as nitrogen dioxide (NO₂) formsa state in the insulating film 110. The state is positioned in theenergy gap of the oxide semiconductor film 108. Thus, when nitrogenoxide (NO_(x)) is diffused to the interface between the insulating film110 and the oxide semiconductor film 108, an electron might be trappedby the state on the insulating film 110 side. As a result, the trappedelectron remains in the vicinity of the interface between the insulatingfilm 110 and the oxide semiconductor film 108, leading to a positiveshift of the threshold voltage of the transistor. Accordingly, the useof a film with a low nitrogen oxide content as the insulating film 110can reduce a shift of the threshold voltage of the transistor.

As an insulating film that releases a small amount of nitrogen oxide(NO_(x)), for example, a silicon oxynitride film can be used. Thesilicon oxynitride film releases more ammonia than nitrogen oxide(NO_(x)) in TDS analysis; the typical released amount of ammonia isgreater than or equal to 1×10¹⁸ molecules/cm³ and less than or equal to5×10¹⁹ molecules/cm³. Note that the released amount of ammonia is thetotal amount of ammonia released by heat treatment in a range of 50° C.to 650° C. or 50° C. to 550° C. in TDS analysis.

Since nitrogen oxide (NO_(x)) reacts with ammonia and oxygen in heattreatment, the use of an insulating film that releases a large amount ofammonia reduces nitrogen oxide (NO_(x)).

Note that in the case where the insulating film 110 is analyzed by SIMS,the nitrogen concentration in the film is preferably lower than or equalto 6×10²⁰ atoms/cm³.

[Oxide Semiconductor Film]

The oxide semiconductor film 108 can be formed using the materialsdescribed above.

In the case where the oxide semiconductor film 108 includes In—M—Znoxide, it is preferable that the atomic ratio of metal elements of asputtering target used for forming the In—M—Zn oxide satisfy In>M. Theatomic ratio of metal elements in such a sputtering target is, forexample, In:M:Zn=2:1:3, In:M:Zn=3:1:2, or In:M:Zn=4:2:4.1.

In the case where the oxide semiconductor film 108 is formed of In—M—Znoxide, it is preferable to use a target including polycrystallineIn—M—Zn oxide as the sputtering target. The use of the target includingpolycrystalline In—M—Zn oxide facilitates formation of the oxidesemiconductor film 108 having crystallinity. Note that the atomic ratioof metal elements in the formed oxide semiconductor film 108 varies fromthe above atomic ratios of metal elements of the sputtering targets in arange of ±40%. For example, when a sputtering target with an atomicratio of In to Ga and Zn of 4:2:4.1 is used, the atomic ratio of In toGa and Zn in the formed oxide semiconductor film 108 may be 4:2:3 or inthe vicinity of 4:2:3.

The energy gap of the oxide semiconductor film 108 is 2 eV or more,preferably 2.5 eV or more. With the use of an oxide semiconductor havingsuch a wide energy gap, the off-state current of the transistor 100 canbe reduced.

The thickness of the oxide semiconductor film 108 is greater than orequal to 3 nm and less than or equal to 200 nm, preferably greater thanor equal to 3 nm and less than or equal to 100 nm, further preferablygreater than or equal to 3 nm and less than or equal to 50 nm.

Furthermore, the oxide semiconductor film 108 may have anon-single-crystal structure. Examples of the non-single-crystalstructure include a c-axis-aligned crystalline oxide semiconductor(CAAC-OS) which will be described later, a polycrystalline structure, amicrocrystalline structure, and an amorphous structure.

[Third Insulating Film]

The insulating film 116 contains nitrogen or hydrogen. A nitrideinsulating film can be used as the insulating film 116, for example.Specifically, a film containing silicon nitride, silicon nitride oxide,silicon oxynitride, or the like can be used as the nitride insulatingfilm. The hydrogen concentration in the insulating film 116 ispreferably higher than or equal to 1×10²² atoms/cm³. The insulating film116 is in contact with the second region 108 n of the oxidesemiconductor film 108. Thus, the concentration of an impurity (nitrogenor hydrogen) in the second region 108 n in contact with the insulatingfilm 116 is increased, leading to an increase in the carrier density ofthe second region 108 n.

[Fourth Insulating Film]

As the insulating film 118, an oxide insulating film can be used.Alternatively, a layered film of an oxide insulating film and a nitrideinsulating film can be used as the insulating film 118. The insulatingfilm 118 can be formed using, for example, silicon oxide, siliconoxynitride, silicon nitride oxide, aluminum oxide, hafnium oxide,gallium oxide, or Ga—Zn oxide.

Furthermore, the insulating film 118 preferably functions as a barrierfilm against hydrogen, water, and the like from the outside.

The thickness of the insulating film 118 can be greater than or equal to30 nm and less than or equal to 500 nm, or greater than or equal to 100nm and less than or equal to 400 nm.

<1-3. Structure Example 2 of Transistor>

Next, a structure of a transistor different from that in FIGS. 1A to 1Cwill be described with reference to FIGS. 2A to 2C.

FIG. 2A is a top view of the transistor 100A. FIG. 2B is across-sectional view taken along a dashed-dotted line X1-X2 in FIG. 2A.FIG. 2C is a cross-sectional view taken along a dashed-dotted line Y1-Y2in FIG. 2A.

The transistor 100A illustrated in FIGS. 2A to 2C includes theconductive film 106 over the substrate 102; the insulating film 104 overthe conductive film 106; the oxide semiconductor film 108 over theinsulating film 104; the insulating film 110 over the oxidesemiconductor film 108; the conductive film 112 over the insulating film110; and the insulating film 116 over the insulating film 104, the oxidesemiconductor film 108, and the conductive film 112.

The transistor 100A includes the conductive film 106 and an opening 143in addition to the components of the transistor 100 described above.

Note that the opening 143 is provided in the insulating films 104 and110. The conductive film 106 is electrically connected to the conductivefilm 112 through the opening 143. Thus, the same potential is applied tothe conductive film 106 and the conductive film 112. Note that differentpotentials may be applied to the conductive film 106 and the conductivefilm 112 without providing the opening 143. Alternatively, theconductive film 106 may be used as a light-blocking film withoutproviding the opening 143. When the conductive film 106 is formed usinga light-blocking material, for example, light irradiating the firstregion 108 i from the bottom can be reduced.

In the case of the structure of the transistor 100A, the conductive film106 functions as a first gate electrode (also referred to as abottom-gate electrode), the conductive film 112 functions as a secondgate electrode (also referred to as a top-gate electrode), theinsulating film 104 functions as a first gate insulating film, and theinsulating film 110 functions as a second gate insulating film.

The conductive film 106 can be formed using a material similar to theabove-described materials of the conductive films 112, 120 a, and 120 b.It is particularly suitable to use a material containing copper as theconductive film 106 because the electric resistance can be reduced. Itis favorable that, for example, each of the conductive films 106, 120 a,and 120 b has a stacked-layer structure in which a copper film is over atitanium nitride film, a tantalum nitride film, or a tungsten film. Inthat case, by using the transistor 100A as a pixel transistor and/or adriving transistor of a display device, parasitic capacitance generatedbetween the conductive films 106 and 120 a and between the conductivefilms 106 and 120 b can be reduced. Thus, the conductive films 106, 120a, and 120 b can be used not only as the first gate electrode, thesource electrode, and the drain electrode of the transistor 100A, butalso as power source supply wirings, signal supply wirings, connectionwirings, or the like of the display device.

In this manner, unlike the transistor 100 described above, thetransistor 100A in FIGS. 2A to 2C has a structure in which a conductivefilm functioning as a gate electrode is provided over and under theoxide semiconductor film 108. As in the transistor 100A, a semiconductordevice of one embodiment of the present invention may have a pluralityof gate electrodes.

As illustrated in FIGS. 2B and 2C, the oxide semiconductor film 108faces the conductive film 106 functioning as a first gate electrode andthe conductive film 112 functioning as a second gate electrode and ispositioned between the two conductive films functioning as the gateelectrodes.

Furthermore, the length of the conductive film 112 in the channel widthdirection is larger than the length of the oxide semiconductor film 108in the channel width direction. In the channel width direction, thewhole oxide semiconductor film 108 is covered with the conductive film112 with the insulating film 110 placed therebetween. Since theconductive film 112 is connected to the conductive film 106 through theopening 143 provided in the insulating films 104 and 110, a side surfaceof the oxide semiconductor film 108 in the channel width direction facesthe conductive film 112 with the insulating film 110 placedtherebetween.

In other words, the conductive film 106 and the conductive film 112 areconnected through the opening 143 provided in the insulating films 104and 110, and each include a region positioned outside an edge portion ofthe oxide semiconductor film 108.

Such a structure enables the oxide semiconductor film 108 included inthe transistor 100A to be electrically surrounded by electric fields ofthe conductive film 106 functioning as a first gate electrode and theconductive film 112 functioning as a second gate electrode. A devicestructure of a transistor, like that of the transistor 100A, in whichelectric fields of the first gate electrode and the second gateelectrode electrically surround the oxide semiconductor film 108 inwhich a channel region is formed can be referred to as a surroundedchannel (S-channel) structure.

Since the transistor 100A has the S-channel structure, an electric fieldfor inducing a channel can be effectively applied to the oxidesemiconductor film 108 by the conductive film 106 or the conductive film112; thus, the current drive capability of the transistor 100A can beimproved and high on-state current characteristics can be obtained. As aresult of the high on-state current, it is possible to reduce the sizeof the transistor 100A. Furthermore, since the transistor 100A has astructure in which the oxide semiconductor film 108 is surrounded by theconductive film 106 and the conductive film 112, the mechanical strengthof the transistor 100A can be increased.

When seen in the channel width direction of the transistor 100A, anopening different from the opening 143 may be formed on the side of theoxide semiconductor film 108 on which the opening 143 is not formed.

When a transistor has a pair of gate electrodes between which asemiconductor film is positioned as in the transistor 100A, one of thegate electrodes may be supplied with a signal A, and the other gateelectrode may be supplied with a fixed potential V_(b). Alternatively,one of the gate electrodes may be supplied with the signal A, and theother gate electrode may be supplied with a signal B. Alternatively, oneof the gate electrodes may be supplied with a fixed potential V_(a), andthe other gate electrode may be supplied with the fixed potential V_(b).

The signal A is, for example, a signal for controlling the on/off state.The signal A may be a digital signal with two kinds of potentials, apotential V1 and a potential V2 (V1>V2). For example, the potential V1can be a high power supply potential, and the potential V2 can be a lowpower supply potential. The signal A may be an analog signal.

The fixed potential V_(b) is, for example, a potential for controlling athreshold voltage V_(thA) of the transistor. The fixed potential V_(b)may be the potential V1 or the potential V2. In that case, a potentialgenerator circuit for generating the fixed potential V_(b) is notnecessary, which is preferable. The fixed potential V_(b) may bedifferent from the potential V1 or the potential V2. When the fixedpotential V_(b) is low, the threshold voltage V_(thA) can be high insome cases. As a result, the drain current flowing when the gate-sourcevoltage V_(gs) is 0 V can be reduced, and leakage current in a circuitincluding the transistor can be reduced in some cases. The fixedpotential V_(b) may be, for example, lower than the low power supplypotential. Meanwhile, a high fixed potential V_(b) can lower thethreshold voltage V_(thA) in some cases. As a result, the drain currentflowing when the gate-source voltage V_(gs) is a high power supplypotential and the operating speed of the circuit including thetransistor can be increased in some cases. The fixed potential V_(b) maybe, for example, higher than the low power supply potential.

The signal B is, for example, a signal for controlling the on/off state.The signal B may be a digital signal with two kinds of potentials, apotential V3 and a potential V4 (V3>V4). For example, the potential V3can be a high power supply potential, and the potential V4 can be a lowpower supply potential. The signal B may be an analog signal.

When both the signal A and the signal B are digital signals, the signalB may have the same digital value as the signal A. In this case, it maybe possible to increase the on-state current of the transistor and theoperating speed of the circuit including the transistor. Here, thepotential V1 and the potential V2 of the signal A may be different fromthe potential V3 and the potential V4 of the signal B. For example, if agate insulating film for the gate to which the signal B is input isthicker than a gate insulating film for the gate to which the signal Ais input, the potential amplitude of the signal B (V3−V4) may be largerthan the potential amplitude of the signal A (V1−V2). In this manner,the influence of the signal A and that of the signal B on the on/offstate of the transistor can be substantially the same in some cases.

When both the signal A and the signal B are digital signals, the signalB may have a digital value different from that of the signal A. In thiscase, the signal A and the signal B can separately control thetransistor, and thus, higher performance can be achieved. The transistorwhich is, for example, an n-channel transistor can function by itself asa NAND circuit, a NOR circuit, or the like in the following case: thetransistor is turned on only when the signal A has the potential V1 andthe signal B has the potential V3, or the transistor is turned off onlywhen the signal A has the potential V2 and the signal B has thepotential V4. The signal B may be a signal for controlling the thresholdvoltage V_(thA). For example, the potential of the signal B in a periodin which the circuit including the transistor operates may be differentfrom the potential of the signal B in a period in which the circuit doesnot operate. The potential of the signal B may vary depending on theoperation mode of the circuit. In this case, the potential of the signalB is not changed as frequently as the potential of the signal A in somecases.

When both the signal A and the signal B are analog signals, the signal Bmay be an analog signal having the same potential as the signal A, ananalog signal whose potential is a constant times the potential of thesignal A, an analog signal whose potential is higher or lower than thepotential of the signal A by a constant, or the like. In this case, itmay be possible to increase the on-state current of the transistor andthe operating speed of the circuit including the transistor. The signalB may be an analog signal different from the signal A. In this case, thesignal A and the signal B can separately control the transistor, andthus, higher performance can be achieved.

The signal A may be a digital signal, and the signal B may be an analogsignal. Alternatively, the signal A may be an analog signal, and thesignal B may be a digital signal.

When both of the gate electrodes of the transistor are supplied with thefixed potentials, the transistor can function as an element equivalentto a resistor in some cases. For example, in the case where thetransistor is an n-channel transistor, the effective resistance of thetransistor can be sometimes low (high) when the fixed potential V_(a) orthe fixed potential V_(b) is high (low). When both the fixed potentialV_(a) and the fixed potential V_(b) are high (low), the effectiveresistance can be lower (higher) than that of a transistor with only onegate in some cases.

The other components of the transistor 100A are similar to those of thetransistor 100 described above and have similar effects.

An insulating film may further be formed over the transistor 100A. Anexample of such a case is illustrated in FIGS. 3A and 3B. FIGS. 3A and3B are cross-sectional views of a transistor 100B. The top view of thetransistor 100B is not illustrated because it is similar to that of thetransistor 100A in FIG. 2A.

The transistor 100B illustrated in FIGS. 3A and 3B includes aninsulating film 122 over the conductive films 120 a and 120 b and theinsulating film 118. The other components of the transistor 100B aresimilar to those of the transistor 100A and have similar effects.

The insulating film 122 has a function of covering unevenness and thelike caused by the transistor or the like. The insulating film 122 hasan insulating property and is formed using an inorganic material or anorganic material. Examples of the inorganic material include a siliconoxide film, a silicon oxynitride film, a silicon nitride oxide film, asilicon nitride film, an aluminum oxide film, and an aluminum nitridefilm. Examples of the organic material include photosensitive resinmaterials such as an acrylic resin and a polyimide resin.

<1-4. Structure Example 3 of Transistor>

Next, a structure of a transistor different from that of the transistor100A in FIGS. 2A to 3C will be described with reference to FIGS. 4A and4B.

FIGS. 4A and 4B are cross-sectional views of a transistor 100C. The topview of the transistor 100C is not illustrated because it is similar tothat of the transistor 100A in FIG. 2A.

The transistor 100C illustrated in FIGS. 4A and 4B is different from thetransistor 100A in the stacked-layer structure of the conductive film112, the shape of the conductive film 112, and the shape of theinsulating film 110.

The conductive film 112 in the transistor 100C includes a conductivefilm 112_1 over the insulating film 110 and the conductive film 112_2over the conductive film 112_1. For example, an oxide conductive film isused as the conductive film 112_1, so that excess oxygen can be added tothe insulating film 110. The oxide conductive film can be formed by asputtering method in an atmosphere containing an oxygen gas. As theoxide conductive film, an oxide including indium and tin, an oxideincluding tungsten and indium, an oxide including tungsten, indium, andzinc, an oxide including titanium and indium, an oxide includingtitanium, indium, and tin, an oxide including indium and zinc, an oxideincluding silicon, indium, and tin, an oxide including indium, gallium,and zinc, or the like can be used, for example.

As illustrated in FIG. 4B, the conductive film 1122 is connected to theconductive film 106 through the opening 143. By forming the opening 143after a conductive film to be the conductive film 112_1 is formed, theshape illustrated in FIG. 4B can be obtained. In the case where an oxideconductive film is used as the conductive film 112_1, the structure inwhich the conductive film 112_2 is connected to the conductive film 106can decrease the contact resistance between the conductive film 112 andthe conductive film 106.

The conductive film 112 and the insulating film 110 in the transistor100C have a tapered shape. More specifically, the lower edge portion ofthe conductive film 112 is positioned outside the upper edge portion ofthe conductive film 112. The lower edge portion of the insulating film110 is positioned outside the upper edge portion of the insulating film110. In addition, the lower edge portion of the conductive film 112 isformed in substantially the same position as that of the upper edgeportion of the insulating film 110.

As compared with the transistor 100A in which the conductive film 112and the insulating film 110 have a rectangular shape, the transistor100C in which the conductive film 112 and the insulating film 110 have atapered shape is favorable because of better coverage with theinsulating film 116.

The other components of the transistor 100C are similar to those of thetransistor 100A described above and have similar effects.

<1-5. Manufacturing Method of Semiconductor Device>

Next, an example of a method for manufacturing the transistor 100Aillustrated in FIGS. 2A to 2C is described with reference to FIGS. 5A to5D, FIGS. 6A to 6C, and FIGS. 7A to 7C. Note that FIGS. 5A to 5D, FIGS.6A to 6C, and FIGS. 7A to 7C are cross-sectional views in the channellength (L) direction and the channel width (W) direction, illustratingthe method for manufacturing the transistor 100A.

First, the conductive film 106 is formed over the substrate 102. Then,the insulating film 104 is formed over the substrate 102 and theconductive film 106, and an island-shaped oxide semiconductor film 108i_0 is formed over the insulating film 104 (see FIG. 5A).

The conductive film 106 can be formed using a material selected from theabove-mentioned materials. In this embodiment, as the conductive film106, a layered film of a 50-nm-thick tungsten film and a 400-nm-thickcopper film is formed with a sputtering apparatus.

To process the conductive film to be the conductive film 106, a wetetching method and/or a dry etching method can be used. In thisembodiment, in the processing of the conductive film into the conductivefilm 106, the copper film is etched by a wet etching method and then thetungsten film is etched by a dry etching method.

The insulating film 104 can be formed by a sputtering method, a CVDmethod, an evaporation method, a pulsed laser deposition (PLD) method, aprinting method, a coating method, or the like as appropriate. In thisembodiment, as the insulating film 104, a 400-nm-thick silicon nitridefilm and a 50-nm-thick silicon oxynitride film are formed with a plasmaCVD apparatus.

After the insulating film 104 is formed, oxygen may be added to theinsulating film 104. As oxygen added to the insulating film 104, anoxygen radical, an oxygen atom, an oxygen atomic ion, an oxygenmolecular ion, or the like may be used. Oxygen can be added by an iondoping method, an ion implantation method, a plasma treatment method, orthe like. Alternatively, a film that suppresses oxygen release may beformed over the insulating film 104, and then, oxygen may be added tothe insulating film 104 through the film.

The film that suppresses oxygen release can be formed using a conductivefilm or a semiconductor film containing one or more of indium, zinc,gallium, tin, aluminum, chromium, tantalum, titanium, molybdenum,nickel, iron, cobalt, and tungsten.

In the case where oxygen is added by plasma treatment in which oxygen isexcited by a microwave to generate high-density oxygen plasma, theamount of oxygen added to the insulating film 104 can be increased.

The island-shaped oxide semiconductor film 108 i_0 can have asingle-layer structure, for example. It is preferable that the oxidesemiconductor film 108 i_0 have a stacked-layer structure of a firstoxide semiconductor film and a second oxide semiconductor film. In thecase where the oxide semiconductor film 108 i_0 has a stacked-layerstructure, either or both of the substrate temperature and thepercentage of oxygen flow rate in forming the first oxide semiconductorfilm are preferably lower than those in forming the second oxidesemiconductor film.

Specifically, the conditions for forming the first oxide semiconductorfilm are set as follows: the substrate temperature is higher than orequal to room temperature and lower than 150° C., preferably higher thanor equal to 100° C. and lower than or equal to 140° C., and thepercentage of oxygen flow rate is higher than 0% and lower than 30%.Furthermore, the conditions for forming the second oxide semiconductorfilm are set as follows: the substrate temperature is higher than orequal to 150° C. and lower than or equal to 350° C., preferably higherthan or equal to 160° C. and lower than or equal to 200° C., and thepercentage of oxygen flow rate is higher than or equal to 30% and lowerthan or equal to 100%.

Under the above-described conditions, the oxide semiconductor filmshaving different carrier densities can be stacked. Note that it is morefavorable to successively form the first oxide semiconductor film andthe second oxide semiconductor film in vacuum because impurities can beprevented from being caught at the interfaces.

When the oxide semiconductor film 108 i_0 is formed while being heated,the crystallinity of the oxide semiconductor film 108 can be increased.However, in the case where a large-sized glass substrate (e.g., the 6thgeneration to the 10th generation) is used as the substrate 102 and theoxide semiconductor film 108 is formed at a substrate temperature higherthan or equal to 200° C. and lower than or equal to 300° C., thesubstrate 102 might be changed in shape (distorted or warped). In thecase where a large-sized glass substrate is used, the change in theshape of the glass substrate can be suppressed by forming the oxidesemiconductor film 108 at a substrate temperature higher than or equalto 100° C. and lower than 200° C.

In addition, increasing the purity of a sputtering gas is necessary. Forexample, as an oxygen gas or an argon gas used as a sputtering gas, agas which is highly purified to have a dew point of −40° C. or lower,preferably −80° C. or lower, further preferably −100° C. or lower, stillfurther preferably −120° C. or lower is used, whereby entry of moistureor the like into the oxide semiconductor film can be minimized.

In the case where the oxide semiconductor film is deposited by asputtering method, a chamber in a sputtering apparatus is preferablyevacuated to be a high vacuum state (to the degree of about 5×10⁻⁷ Pa to1×10⁻⁴ Pa) with an adsorption vacuum evacuation pump such as a cryopumpin order to remove water or the like, which serves as an impurity forthe oxide semiconductor film, as much as possible. In particular, thepartial pressure of gas molecules corresponding to H₂O (gas moleculescorresponding to M/z=18) in the chamber in the standby mode of thesputtering apparatus is preferably lower than or equal to 1×10⁻⁴ Pa,further preferably lower than or equal to 5×10⁻⁵ Pa.

In addition, the first oxide semiconductor film is formed by asputtering method using an In—Ga—Zn oxide semiconductor target(In:Ga:Zn=4:2:4.1 in an atomic ratio). The substrate temperature duringthe formation of the first oxide semiconductor film is 130° C., andoxygen gas at a flow rate of 20 sccm and argon gas at a flow rate of 180sccm are used as a deposition gas (percentage of oxygen flow rate: 10%).

The second oxide semiconductor film is formed by a sputtering methodusing an In—Ga—Zn oxide semiconductor target (In:Ga:Zn=4:2:4.1 in anatomic ratio). The substrate temperature during the formation of thesecond oxide semiconductor film is 170° C., and oxygen gas at a flowrate of 60 sccm and argon gas at a flow rate of 140 sccm are used as adeposition gas (percentage of oxygen flow rate: 30%).

Note that although the stacked structure of the oxide semiconductorfilms having different carrier densities was formed by changing thesubstrate temperature and the percentage of oxygen flow rate between thefirst oxide semiconductor film and the second oxide semiconductor filmin the above-described example, the method for forming the structure isnot limited to this example. For example, an impurity element may beadded in formation of the first oxide semiconductor film to make thecarrier density of the first oxide semiconductor film different fromthat of the second oxide semiconductor film. Examples of the impurityelement include hydrogen, boron, carbon, nitrogen, fluorine, phosphorus,sulfur, chlorine, and a rare gas element.

Among the above-described elements, nitrogen is particularly preferableas the impurity element added to the first oxide semiconductor film. Forexample, nitrogen can be added to the first oxide semiconductor film byusing argon gas and nitrogen gas as a deposition gas or using argon gasand dinitrogen monoxide as a deposition gas in forming the first oxidesemiconductor film.

In the case where an impurity element is used to form the first oxidesemiconductor film, it is favorable to independently provide a chamberfor forming the first oxide semiconductor film in order to prevent theimpurity element from entering a film into which the impurity element ispreferably not added, e.g., the second oxide semiconductor film.

After the first oxide semiconductor film is formed, an impurity elementmay be added to the first oxide semiconductor film. As a method foradding an impurity element after formation of the first oxidesemiconductor film, doping treatment or plasma treatment can be used,for example.

After the first oxide semiconductor film and the second oxidesemiconductor film are formed, the first oxide semiconductor film andthe second oxide semiconductor film may be dehydrated or dehydrogenatedby heat treatment. The temperature of the heat treatment is typicallyhigher than or equal to 150° C. and lower than the strain point of thesubstrate, higher than or equal to 250° C. and lower than or equal to450° C., or higher than or equal to 300° C. and lower than or equal to450° C.

The heat treatment can be performed in an inert gas atmospherecontaining nitrogen or a rare gas such as helium, neon, argon, xenon, orkrypton. Alternatively, the heat treatment may be performed in an inertgas atmosphere first, and then, in an oxygen atmosphere. It ispreferable that the above inert gas atmosphere and the above oxygenatmosphere do not contain hydrogen, water, and the like. The treatmenttime may be longer than or equal to 3 minutes and shorter than or equalto 24 hours.

An electric furnace, an RTA apparatus, or the like can be used for theheat treatment. With the use of an RTA apparatus, the heat treatment canbe performed at a temperature higher than or equal to the strain pointof the substrate if the heating time is short. Therefore, the heattreatment time can be shortened.

By depositing the oxide semiconductor film while it is heated or byperforming heat treatment after the formation of the oxide semiconductorfilm, the hydrogen concentration in the oxide semiconductor film, whichis measured by SIMS, can be 5×10¹⁹ atoms/cm³ or lower, 1×10¹⁹ atoms/cm³or lower, 5×10¹⁸ atoms/cm³ or lower, 1×10¹⁸ atoms/cm³ or lower, 5×10¹⁷atoms/cm³ or lower, or 1×10¹⁶ atoms/cm³ or lower.

Next, an insulating film 110_0 is formed over the insulating film 104and the oxide semiconductor film (see FIG. 5B).

As the insulating film 110_0, a silicon oxide film or a siliconoxynitride film can be formed with a plasma-enhanced chemical vapordeposition apparatus (a PECVD apparatus or simply referred to as aplasma CVD apparatus). In this case, a deposition gas containing siliconand an oxidizing gas are preferably used as a source gas. Typicalexamples of the deposition gas containing silicon include silane,disilane, trisilane, and silane fluoride. As examples of the oxidizinggas, oxygen, ozone, dinitrogen monoxide, and nitrogen dioxide can begiven.

A silicon oxynitride film having few defects can be formed as theinsulating film 110_0 with a plasma CVD apparatus under the conditionsthat the flow rate of the oxidizing gas is more than 20 times and lessthan 100 times, or more than or equal to 40 times and less than or equalto 80 times the flow rate of the deposition gas and that the pressure ina treatment chamber is lower than 100 Pa, or lower than or equal to 50Pa.

As the insulating film 110_0, a dense silicon oxide film or a densesilicon oxynitride film can be formed under the following conditions:the substrate placed in a vacuum-evacuated treatment chamber of a plasmaCVD apparatus is held at a temperature higher than or equal to 280° C.and lower than or equal to 400° C., the pressure in the treatmentchamber into which a source gas is introduced is set to be higher thanor equal to 20 Pa and lower than or equal to 250 Pa, preferably higherthan or equal to 100 Pa and lower than or equal to 250 Pa, and ahigh-frequency power is supplied to an electrode provided in thetreatment chamber.

The insulating film 110_0 may be formed by a plasma CVD method using amicrowave. A microwave refers to a wave in the frequency range of 300MHz to 300 GHz. In a microwave, electron temperature and electron energyare low. Furthermore, in supplied power, the proportion of power usedfor acceleration of electrons is low, and therefore, much more power canbe used for dissociation and ionization of molecules. Thus, plasma witha high density (high-density plasma) can be excited. This method causeslittle plasma damage to the deposition surface or a deposit, so that theinsulating film 110_0 having few defects can be formed.

Alternatively, the insulating film 110_0 can also be formed by a CVDmethod using an organosilane gas. As the organosilane gas, the followingsilicon-containing compound can be used: tetraethyl orthosilicate (TEOS)(chemical formula: Si(OC₂H₅)₄), tetramethylsilane (TMS) (chemicalformula: Si(CH₃)₄), tetramethylcyclotetrasiloxane (TMCTS),octamethylcyclotetrasiloxane (OMCTS), hexamethyldisilazane (HMDS),triethoxysilane (SiH(OC₂H₅)₃), trisdimethylaminosilane (SiH(N(CH₃)₂)₃),or the like. By a CVD method using an organosilane gas, the insulatingfilm 110_0 having high coverage can be formed.

In this embodiment, as the insulating film 110_0, a 100-nm-thick siliconoxynitride film is formed with a plasma CVD apparatus.

Subsequently, a mask is formed by lithography in a desired position overthe insulating film 110_0, and then, the insulating film 110_0 and theinsulating film 104 are partly etched, so that the opening 143 reachingthe conductive film 106 is formed (see FIG. 5C).

To form the opening 143, a wet etching method and/or a dry etchingmethod can be used. In this embodiment, the opening 143 is formed by adry etching method.

Next, a conductive film 112_0 is formed over the conductive film 106 andthe insulating film 110_0 so as to cover the opening 143. In the casewhere a metal oxide film is used as the conductive film 112_0, forexample, oxygen might be added from the conductive film 112_0 to theinsulating film 110_0 during the formation of the conductive film 112_0(see FIG. 5D).

In FIG. 5D, oxygen added to the insulating film 110_0 is schematicallyshown by arrows. Furthermore, the conductive film 112_0 formed to coverthe opening 143 is electrically connected to the conductive film 106.

In the case where a metal oxide film is used as the conductive film1120, the conductive film 112_0 is preferably formed by a sputteringmethod in an atmosphere containing an oxygen gas. Formation of theconductive film 112_0 in an atmosphere containing an oxygen gas allowssuitable addition of oxygen to the insulating film 110_0. Note that amethod for forming the conductive film 112_0 is not limited to asputtering method, and other methods such as an atomic layer deposition(ALD) method may be used.

In this embodiment, a 100-nm-thick IGZO film containing an In—Ga—Znoxide (In:Ga:Zn=4:2:4.1 [atomic ratio]) is formed as the conductive film112_0 by a sputtering method. Note that oxygen addition treatment may beperformed on the insulating film 110_0 before or after the formation ofthe conductive film 112_0. The oxygen addition treatment can beperformed in a manner similar to that of the oxygen addition that can beperformed after the formation of the insulating film 104.

Subsequently, a mask 140 is formed by a lithography process in a desiredposition over the conductive film 112_0 (see FIG. 6A).

Next, etching is performed from above the mask 140 to process theconductive film 112_0 and the insulating film 110_0. After theprocessing of the conductive film 112_0 and the insulating film 110_0,the mask 140 is removed. As a result of the processing of the conductivefilm 112_0 and the insulating film 110_0, the island-shaped conductivefilm 112 and the island-shaped insulating film 110 are formed (see FIG.6B).

In this embodiment, the conductive film 112_0 and the insulating film110_0 are processed by a dry etching method.

In the processing into the conductive film 112 and the insulating film110, the thickness of the oxide semiconductor film in a region notoverlapping with the conductive film 112 is decreased in some cases. Inother cases, in the processing into the conductive film 112 and theinsulating film 110, the thickness of the insulating film 104 in aregion not overlapping with the oxide semiconductor film is decreased.In the processing of the conductive film 112_0 and the insulating film110_0, an etchant or an etching gas (e.g., chlorine) might be added tothe oxide semiconductor film or the constituent element of theconductive film 112_0 or the insulating film 110_0 might be added to theoxide semiconductor film.

Next, the insulating film 116 is formed over the insulating film 104,the oxide semiconductor film, and the conductive film 112, whereby partof the oxide semiconductor film, which is in contact with the insulatingfilm 116 becomes the second region 108 n. Furthermore, part of the oxidesemiconductor film, which is in contact with the insulating film 110becomes the first region 108 i. Accordingly, the oxide semiconductorfilm 108 including the first region 108 i and the second region 108 n isformed (see FIG. 6C).

The insulating film 116 can be formed using a material selected from theabove-mentioned materials. In this embodiment, as the insulating film116, a 100-nm-thick silicon nitride oxide film is formed with a plasmaCVD apparatus. In the formation of the silicon nitride oxide film,plasma treatment and deposition treatment are performed at 220° C. Theplasma treatment is performed before deposition under the followingconditions: an argon gas at a flow rate of 100 sccm is introduced into achamber, the pressure in the chamber is set to 40 Pa, and power of 1000W is supplied to an RF power source (27.12 MHz). The depositiontreatment is performed under the following conditions: a silane gas at aflow rate of 50 sccm, a nitrogen gas at a flow rate of 5000 sccm, and anammonia gas at a flow rate of 100 sccm are introduced into the chamber;the pressure in the chamber is set to 100 Pa; and power of 1000 W issupplied to the RF power source (27.12 MHz).

When the insulating film 116 includes a silicon nitride oxide film,nitrogen or hydrogen in the silicon nitride oxide film can be suppliedto the second region 108 n in contact with the insulating film 116.Moreover, when the temperature in forming the insulating film 116 is theabove-mentioned temperature, release of excess oxygen contained in theinsulating film 110 to the outside can be suppressed.

Next, the insulating film 118 is formed over the insulating film 116(see FIG. 7A).

The insulating film 118 can be formed using a material selected from theabove-mentioned materials. In this embodiment, as the insulating film118, a 300-nm-thick silicon oxynitride film is formed with a plasma CVDapparatus.

Then, a mask is formed over desired positions of the insulating film 118by lithography, and the insulating film 118 and the insulating film 116are partly etched. Thus, the openings 141 a and 141 b reaching thesecond region 108 n are formed (see FIG. 7B).

To etch the insulating films 118 and 116, a wet etching method and/or adry etching method can be used. In this embodiment, the insulating films118 and 116 are processed by a dry etching method.

Next, a conductive film is formed over the second region 108 n and theinsulating film 118 to cover the openings 141 a and 141 b, and processedinto desired shapes, so that the conductive films 120 a and 120 b areformed (see FIG. 7C).

The conductive films 120 a and 120 b can be formed using a materialselected from the above-mentioned materials. In this embodiment, as theconductive films 120 a and 120 b, a layered film including a 50-nm-thicktungsten film and a 400-nm-thick copper film is formed with a sputteringapparatus.

To process the conductive film to be the conductive films 120 a and 120b, a wet etching method and/or a dry etching method can be used. In thisembodiment, in the processing of the conductive film into the conductivefilms 120 a and 120 b, the copper film is etched by a wet etching methodand then the tungsten film is etched by a dry etching method.

Through the above process, the transistor 100A in FIGS. 2A to 2C can befabricated.

Note that the films included in the transistor 100A (the insulatingfilm, the metal oxide film, the oxide semiconductor film, the conductivefilm, and the like) can be formed by, other than the above methods, asputtering method, a chemical vapor deposition (CVD) method, a vacuumevaporation method, a pulsed laser deposition (PLD) method, or an ALDmethod. Alternatively, a coating method or a printing method can beused. Although the sputtering method and a plasma-enhanced chemicalvapor deposition (PECVD) method are typical examples of the filmformation method, a thermal CVD method may be used. As an example of athermal CVD method, a metal organic chemical vapor deposition (MOCVD)method can be given.

Deposition by a thermal CVD method may be performed in such a mannerthat the pressure in a chamber is set to an atmospheric pressure or areduced pressure, and a source gas and an oxidizer are supplied to thechamber at a time and react with each other in the vicinity of thesubstrate or over the substrate. Thus, no plasma is generated in thedeposition; therefore, a thermal CVD method has an advantage that nodefect due to plasma damage is caused.

The films such as the conductive films, the insulating films, the oxidesemiconductor films, and the metal oxide films that are described abovecan be formed by a thermal CVD method such as an MOCVD method. Forexample, in the case where an In—Ga—Zn—O film is formed, trimethylindium(In(CH₃)₃), trimethylgallium (Ga(CH₃)₃), and dimethylzinc (Zn(CH₃)₂) areused. Without limitation to the above combination, triethylgallium(Ga(C₂H₅)₃) can be used instead of trimethylgallium and diethylzinc(Zn(C₂H₅)₂) can be used instead of dimethylzinc.

In the case where a hafnium oxide film is formed with a depositionapparatus employing an ALD method, two kinds of gases are used, namely,ozone (O₃) as an oxidizer and a source gas that is obtained byvaporizing liquid containing a solvent and a hafnium precursor (hafniumalkoxide or hafnium amide such as tetrakis(dimethylamide)hafnium (TDMAH,Hf[N(CH₃)₂]₄) or tetrakis(ethylmethylamide)hafnium).

In the case where an aluminum oxide film is formed with a depositionapparatus employing an ALD method, two kinds of gases are used, namely,H₂O as an oxidizer and a source gas that is obtained by vaporizingliquid containing a solvent and an aluminum precursor (e.g.,trimethylaluminum (TMA, Al(CH₃)₃)). Examples of another material includetris(dimethylamide)aluminum, triisobutylaluminum, and aluminumtris(2,2,6,6-tetramethyl-3,5-heptanedionate).

In the case where a silicon oxide film is formed with a depositionapparatus employing an ALD method, hexachlorodisilane is adsorbed on asurface on which a film is to be formed, and radicals of an oxidizinggas (O₂ or dinitrogen monoxide) are supplied to react with theadsorbate.

In the case where a tungsten film is formed with a deposition apparatusemploying an ALD method, a WF₆ gas and a B₂H₆ gas are sequentiallyintroduced to form an initial tungsten film, and then, a WF₆ gas and anH₂ gas are used to form a tungsten film. Note that an SiH₄ gas may beused instead of a B₂H₆ gas.

In the case where an oxide semiconductor film such as an In—Ga—Zn—O filmis formed with a deposition apparatus employing an ALD method, anIn(CH₃)₃ gas and an O₃ gas are used to form an In—O layer, a Ga(CH₃)₃gas and an O₃ gas are used to form a Ga—O layer, and then, a Zn(CH₃)₂gas and an O₃ gas are used to form a Zn—O layer. Note that the order ofthese layers is not limited to this example. A mixed compound layer suchas an In—Ga—O layer, an In—Zn—O layer, or a Ga—Zn—O layer may be formedby using these gases. Note that although an H₂O gas that is obtained bybubbling water with an inert gas such as Ar may be used instead of an O₃gas, it is preferable to use an O₃ gas, which does not contain H.

One embodiment of the present invention is not limited to the exampledescribed in this embodiment, in which the transistor includes an oxidesemiconductor film. In one embodiment of the present invention, thetransistor does not necessarily include an oxide semiconductor film. Forexample, a channel region, the vicinity of the channel region, a sourceregion, or a drain region of the transistor may be formed using amaterial containing silicon (Si), germanium (Ge), silicon germanium(SiGe), gallium arsenide (GaAs), or the like.

Note that the structure and method described in this embodiment can beused in appropriate combination with the structure and method describedin any of the other embodiments.

Embodiment 2

In this embodiment, a modification example of the transistor describedin Embodiment 1 that can be used in one embodiment of the presentinvention will be described.

In the transistor 100C illustrated in FIGS. 4A and 4B, a region 108 n_2may be provided between the first region 108 i and the second region 108n as illustrated in FIG. 45 in such a manner that the conductive film112 is formed shorter than the insulating film 110 in the channel lengthdirection of the transistor and heat treatment is performed or animpurity element is added by doping treatment or plasma treatment. Theconductivity of the region 108 n_2 is higher than that of the firstregion 108 i and lower than that of the second region 108 n. The region108 n_2 can prevent the intensity of an electric field at an end portionof a drain of the transistor from being increased locally during theoperation of a semiconductor device or a display device.

Note that the structure and method described in this embodiment can beused in appropriate combination with the structure and method describedin any of the other embodiments.

Embodiment 3

In this embodiment, an oxide semiconductor that can be used in oneembodiment of the present invention will be described.

<2-1. Composition of Oxide Semiconductor>

An oxide semiconductor preferably contains at least indium or zinc. Inparticular, indium and zinc are preferably contained. In addition,aluminum, gallium, yttrium, tin, or the like is preferably contained.Furthermore, one or more elements selected from boron, silicon,titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum,cerium, neodymium, hafnium, tantalum, tungsten, magnesium, and the likemay be contained.

Here, the case where an oxide semiconductor is InMZnO containing indium,an element M, and zinc is considered. The element M is aluminum,gallium, yttrium, tin, or the like. Alternatively, the element M can beboron, silicon, titanium, iron, nickel, germanium, zirconium,molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten,magnesium, or the like. Note that two or more of the above elements maybe used in combination as the element M, in some cases.

<Structure>

An oxide semiconductor is classified into a single crystal oxidesemiconductor and a non-single-crystal oxide semiconductor. Examples ofa non-single-crystal oxide semiconductor include a c-axis-alignedcrystalline oxide semiconductor (CAAC-OS), a polycrystalline oxidesemiconductor, a nanocrystalline oxide semiconductor (nc-OS), anamorphous-like oxide semiconductor (a-like OS), and an amorphous oxidesemiconductor.

The CAAC-OS has c-axis alignment, its nanocrystals are connected in thea-b plane direction, and its crystal structure has distortion. Note thatdistortion refers to a portion where the direction of a latticearrangement changes between a region with a uniform lattice arrangementand another region with a uniform lattice arrangement in a region wherethe nanocrystals are connected.

The shape of the nanocrystal is basically a hexagon but is not always aregular hexagon and is a non-regular hexagon in many cases. A pentagonallattice arrangement, a heptagonal lattice arrangement, and the like areincluded in the distortion in some cases. Note that a clear crystalgrain boundary cannot be observed even in the vicinity of distortion inthe CAAC-OS. That is, a lattice arrangement is distorted so thatformation of a crystal grain boundary is inhibited. This is probablybecause the CAAC-OS can tolerate distortion owing to a low density ofarrangement of oxygen atoms in an a-b plane direction, a change ininteratomic bond distance by substitution of a metal element, and thelike.

The CAAC-OS tends to have a layered crystal structure (also referred toas a stacked-layer structure) in which a layer containing indium andoxygen (hereinafter, In layer) and a layer containing the element M,zinc, and oxygen (hereinafter, (M,Zn) layer) are stacked. Note thatindium and the element M can be replaced with each other, and when theelement M of the (M,Zn) layer is replaced by indium, the layer can alsobe referred to as an (In,M,Zn) layer. When indium of the In layer isreplaced by the element M, the layer can also be referred to as an(In,M) layer.

In the nc-OS, a microscopic region (for example, a region with a sizegreater than or equal to 1 nm and less than or equal to 10 nm, inparticular, a region with a size greater than or equal to 1 nm and lessthan or equal to 3 nm) has a periodic atomic arrangement. There is noregularity of crystal orientation between different nanocrystals in thenc-OS. Thus, the orientation of the whole film is not observed.Accordingly, in some cases, the nc-OS cannot be distinguished from ana-like OS or an amorphous oxide semiconductor, depending on an analysismethod.

The a-like OS has a structure intermediate between those of the nc-OSand the amorphous oxide semiconductor. The a-like OS has a void or alow-density region. That is, the a-like OS has low crystallinity ascompared with the nc-OS and the CAAC-OS.

An oxide semiconductor can have various structures which show variousdifferent properties. Two or more of the amorphous oxide semiconductor,the polycrystalline oxide semiconductor, the a-like OS, the nc-OS, andthe CAAC-OS may be included in an oxide semiconductor of one embodimentof the present invention.

<Atomic Ratio>

Next, preferred ranges of the atomic ratio of indium, the element M, andzinc contained in an oxide semiconductor according to the presentinvention will be described with reference to FIGS. 8A to 8C. Note thatthe proportion of oxygen atoms is not illustrated in FIGS. 8A to 8C. Theterms of the atomic ratio of indium, the element M, and zinc containedin the oxide semiconductor are denoted by [In], [M], and [Zn],respectively.

In FIGS. 8A to 8C, broken lines indicate a line where the atomic ratio[In]:[M]:[Zn] is (1+α):(1−α):1 (−1≤α≤1), aline where the atomic ratio[In]:[M]:[Zn] is (1+α):(1−α):2, a line where the atomic ratio[In]:[M]:[Zn] is (1+α):(1−α):3, a line where the atomic ratio[In]:[M]:[Zn] is (1+α):(1−α):4, and a line where the atomic ratio[In]:[M]:[Zn] is (1+α):(1−α):5.

Dashed-dotted lines indicate a line where the atomic ratio [In]:[M]:[Zn]is 5:1:β(β≥0), a line where the atomic ratio [In]:[M]:[Zn] is 2:1:β, aline where the atomic ratio [In]:[M]:[Zn] is 1:1:β, a line where theatomic ratio [In]:[M]:[Zn] is 1:2:β, a line where the atomic ratio[In]:[M]:[Zn] is 1:3:β, and a line where the atomic ratio [In]:[M]:[Zn]is 1:4:β.

Furthermore, an oxide semiconductor with the atomic ratio of[In]:[M]:[Zn]=0:2:1 or a neighborhood thereof in FIGS. 8A to 8C tends tohave a spinel crystal structure.

A plurality of phases (e.g., two phases or three phases) exist in theoxide semiconductor in some cases. For example, with an atomic ratio[In]:[M]:[Zn] that is close to 0:2:1, two phases of a spinel crystalstructure and a layered crystal structure are likely to exist. Inaddition, with an atomic ratio [In]:[M]:[Zn] that is close to 1:0:0, twophases of a bixbyite crystal structure and a layered crystal structureare likely to exist. In the case where a plurality of phases exist inthe oxide semiconductor, a grain boundary might be formed betweendifferent crystal structures.

A region A in FIG. 8A represents examples of the preferred ranges of theatomic ratio of indium, the element M, and zinc contained in an oxidesemiconductor.

In addition, the oxide semiconductor containing indium in a higherproportion can have high carrier mobility (electron mobility). Thus, anoxide semiconductor having a high content of indium has higher carriermobility than an oxide semiconductor having a low content of indium.

In contrast, when the indium content and the zinc content in an oxidesemiconductor become lower, carrier mobility becomes lower. Thus, withan atomic ratio of [In]:[M]:[Zn]=0:1:0 and the vicinity thereof (e.g., aregion C in FIG. 8C), insulation performance becomes better.

Accordingly, an oxide semiconductor of one embodiment of the presentinvention preferably has an atomic ratio represented by the region A inFIG. 8A. With the atomic ratio, a stacked-layer structure with highcarrier mobility and a few grain boundaries is easily obtained.

An oxide semiconductor with an atomic ratio in the region A,particularly in a region B in FIG. 8B, is excellent because the oxidesemiconductor easily becomes a CAAC-OS and has high carrier mobility.

The CAAC-OS is an oxide semiconductor with high crystallinity. Incontrast, in the CAAC-OS, a reduction in electron mobility due to thegrain boundary is less likely to occur because a clear grain boundarycannot be observed. Entry of impurities, formation of defects, or thelike might decrease the crystallinity of an oxide semiconductor. Thismeans that the CAAC-OS has small amounts of impurities and defects(e.g., oxygen vacancies). Thus, an oxide semiconductor including aCAAC-OS is physically stable. Therefore, the oxide semiconductorincluding a CAAC-OS is resistant to heat and has high reliability.

Note that the region B includes an atomic ratio of [In]:[M]:[Zn]=4:2:3to 4:2:4.1 and the vicinity thereof. The vicinity includes an atomicratio of [In]:[M]:[Zn]=5:3:4. Note that the region B includes an atomicratio of [In]:[M]:[Zn]=5:1:6 and the vicinity thereof and an atomicratio of [In]:[M]:[Zn]=5:1:7 and the vicinity thereof.

Note that the property of an oxide semiconductor is not uniquelydetermined by an atomic ratio. Even with the same atomic ratio, theproperty of an oxide semiconductor might be different depending on aformation condition. For example, in the case where the oxidesemiconductor is deposited with a sputtering apparatus, a film having anatomic ratio deviated from the atomic ratio of a target is formed. Inparticular, [Zn] in the film might be smaller than [Zn] in the targetdepending on the substrate temperature in deposition. Thus, theillustrated regions each represent an atomic ratio with which an oxidesemiconductor tends to have specific characteristics, and boundaries ofthe regions A to C are not clear.

[Transistor Including Oxide Semiconductor]

Next, the case where the above-described oxide semiconductor is used fora transistor will be described.

Note that when the oxide semiconductor is used for a transistor, carrierscattering or the like at a grain boundary can be reduced; thus, thetransistor can have high field-effect mobility. In addition, thetransistor can have high reliability.

An oxide semiconductor with a low carrier density is preferably used fora channel region of the transistor. In order to reduce the carrierdensity of the oxide semiconductor film, the impurity concentration inthe oxide semiconductor film is reduced so that the density of defectstates can be reduced. In this specification and the like, a state witha low impurity concentration and a low density of defect states isreferred to as a highly purified intrinsic or substantially highlypurified intrinsic state. For example, an oxide semiconductor whosecarrier density is lower than 8×10¹¹/cm³, preferably lower than1×10¹¹/cm³, further preferably lower than 1×10¹⁰/cm³, and greater thanor equal to 1×10⁻⁹/cm³ is used.

A highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor film has a low density of defect states andaccordingly has a low density of trap states in some cases.

Charge trapped by the trap states in the oxide semiconductor takes along time to be released and may behave like fixed charge. Thus, atransistor whose channel region is formed in an oxide semiconductorhaving a high density of trap states has unstable electricalcharacteristics in some cases.

In order to obtain stable electrical characteristics of the transistor,it is effective to reduce the concentration of impurities in the oxidesemiconductor. In addition, in order to reduce the concentration ofimpurities in the oxide semiconductor, the concentration of impuritiesin a film that is adjacent to the oxide semiconductor is preferablyreduced. Examples of impurities include hydrogen, nitrogen, alkalimetal, alkaline earth metal, iron, nickel, and silicon.

<Impurities>

Here, the influence of impurities in the oxide semiconductor isdescribed.

When silicon or carbon that is one of Group 14 elements is contained inthe oxide semiconductor, defect states are formed. Thus, theconcentration of silicon or carbon in the oxide semiconductor and aroundan interface with the oxide semiconductor (measured by secondary ionmass spectrometry (SIMS)) is set lower than or equal to 2×10¹⁸atoms/cm³, and preferably lower than or equal to 2×10¹⁷ atoms/cm³.

When the oxide semiconductor contains alkali metal or alkaline earthmetal, defect states are formed and carriers are generated, in somecases. Thus, a transistor including an oxide semiconductor that containsalkali metal or alkaline earth metal is likely to be normally-on.Therefore, it is preferable to reduce the concentration of alkali metalor alkaline earth metal in the oxide semiconductor. Specifically, theconcentration of alkali metal or alkaline earth metal in the oxidesemiconductor measured by SIMS is set lower than or equal to 1×10¹⁸atoms/cm³, and preferably lower than or equal to 2×10¹⁶ atoms/cm³.

When the oxide semiconductor contains nitrogen, the oxide semiconductoreasily becomes n-type by generation of electrons serving as carriers andan increase of carrier density. Thus, a transistor whose semiconductorincludes an oxide semiconductor that contains nitrogen is likely to benormally-on. For this reason, nitrogen in the oxide semiconductor ispreferably reduced as much as possible; for example, the concentrationof nitrogen in the oxide semiconductor, which is measured by SIMS, canbe lower than 5×10¹⁹ atoms/cm³, preferably lower than or equal to 5×10¹⁸atoms/cm³, further preferably lower than or equal to 1×10¹⁸ atoms/cm³,and still further preferably lower than or equal to 5×10¹⁷ atoms/cm³.

Hydrogen contained in an oxide semiconductor reacts with oxygen bondedto a metal atom to be water, and thus causes an oxygen vacancy, in somecases. Due to entry of hydrogen into the oxygen vacancy, an electronserving as a carrier is generated in some cases. Furthermore, in somecases, bonding of part of hydrogen to oxygen bonded to a metal atomcauses generation of an electron serving as a carrier. Thus, atransistor including an oxide semiconductor that contains hydrogen islikely to be normally-on. Accordingly, it is preferable that hydrogen inthe oxide semiconductor be reduced as much as possible. Specifically,the hydrogen concentration of the oxide semiconductor measured by SIMSis set lower than 1×10²⁰ atoms/cm³, preferably lower than 1×10¹⁹atoms/cm³, further preferably lower than 5×10¹⁸ atoms/cm³, and stillfurther preferably lower than 1×10¹⁸ atoms/cm³.

When an oxide semiconductor with a sufficiently reduced impurityconcentration is used for a channel formation region in a transistor,the transistor can have stable electrical characteristics.

<Band Diagram>

Next, the case where the oxide semiconductor has a two-layer structureor a three-layer structure is described. A band diagram of astacked-layer structure of an oxide semiconductor S1, an oxidesemiconductor S2, and an oxide semiconductor S3 and insulators that arein contact with the stacked-layer structure, a band diagram of astacked-layer structure of the oxide semiconductors S2 and S3 andinsulators that are in contact with the stacked-layer structure, and aband diagram of a stacked-layer structure of the oxide semiconductors S1and S2 and insulators that are in contact with the stacked-layerstructure are described with reference to FIGS. 9A to 9C.

FIG. 9A is an example of a band diagram of a stacked-layer structureincluding an insulator I1, the oxide semiconductor S1, the oxidesemiconductor S2, the oxide semiconductor S3, and an insulator I2 in athickness direction. FIG. 9B is an example of a band diagram of astacked-layer structure including the insulator I1, the oxidesemiconductor S2, the oxide semiconductor S3, and the insulator I2 in athickness direction. FIG. 9C is an example of a band diagram of astacked-layer structure including the insulator I1, the oxidesemiconductor S1, the oxide semiconductor S2, and the insulator I2 in athickness direction. Note that for easy understanding, the band diagramsshow the conduction band minimum (Ec) of each of the insulator I1, theoxide semiconductor S1, the oxide semiconductor S2, the oxidesemiconductor S3, and the insulator I2.

The conduction band minimum of each of the oxide semiconductors S1 andS3 is closer to the vacuum level than that of the oxide semiconductorS2. Typically, a difference in the conduction band minimum between theoxide semiconductor S2 and each of the oxide semiconductors S1 and S3 ispreferably greater than or equal to 0.15 eV or greater than or equal to0.5 eV, and less than or equal to 2 eV or less than or equal to 1 eV.That is, it is preferable that the difference between the electronaffinity of each of the oxide semiconductors S1 and S3 and the electronaffinity of the oxide semiconductor S2 be greater than or equal to 0.15eV or greater than or equal to 0.5 eV, and less than or equal to 2 eV orless than or equal to 1 eV.

As shown in FIGS. 9A to 9C, the conduction band minimum of each of theoxide semiconductors S1 to S3 is gradually varied. In other words, theconduction band minimum is continuously varied or continuouslyconnected. In order to obtain such a band diagram, the density of defectstates in a mixed layer formed at the interface between the oxidesemiconductors S1 and S2 or the interface between the oxidesemiconductors S2 and S3 is preferably made low.

Specifically, when the oxide semiconductors S1 and S2 or the oxidesemiconductors S2 and S3 contain the same element (as a main component)in addition to oxygen, a mixed layer with a low density of defect statescan be formed. For example, in the case where the oxide semiconductor S2is an In—Ga—Zn oxide semiconductor, it is preferable to use an In—Ga—Znoxide semiconductor, a Ga—Zn oxide semiconductor, gallium oxide, or thelike as each of the oxide semiconductors S1 and S3.

At this time, the oxide semiconductor S2 serves as a main carrier path.Since the density of defect states at the interface between the oxidesemiconductors S1 and S2 and the interface between the oxidesemiconductors S2 and S3 can be made low, the influence of interfacescattering on carrier conduction is small, and high on-state current canbe obtained.

When an electron is trapped in a trap state, the trapped electronbehaves like fixed charge; thus, the threshold voltage of the transistoris shifted in a positive direction. The oxide semiconductors S1 and S3can make the trap state apart from the oxide semiconductor S2. Thisstructure can prevent the positive shift of the threshold voltage of thetransistor.

A material whose conductivity is sufficiently lower than that of theoxide semiconductor S2 is used for the oxide semiconductors S1 and S3.In that case, the oxide semiconductor S2, the interface between theoxide semiconductors S1 and S2, and the interface between the oxidesemiconductors S2 and S3 mainly function as a channel region. Forexample, an oxide semiconductor with high insulation performance and theatomic ratio represented by the region C in FIG. 8C may be used as theoxide semiconductors S1 and S3. Note that the region C illustrated inFIG. 8C represents atomic ratios [In]:[M]:[Zn] of 0:1:0, 1:3:2, and1:3:4 and the vicinities thereof.

In the case where an oxide semiconductor with the atomic ratiorepresented by the region A is used as the oxide semiconductor S2, it isparticularly preferable to use an oxide semiconductor with an atomicratio where [M]/[In] is greater than or equal to 1, preferably greaterthan or equal to 2 as each of the oxide semiconductors S1 and S3. Inaddition, it is suitable to use an oxide semiconductor with sufficientlyhigh insulation performance and an atomic ratio where [M]/([Zn]+[In]) isgreater than or equal to 1 as the oxide semiconductor S3.

<2-2. Structure in Which Oxide Semiconductor is Used for Transistor>

Next, a structure in which the oxide semiconductor is used in atransistor will be described.

Note that when the oxide semiconductor is used for a transistor, carrierscattering or the like at a grain boundary can be reduced; thus, thetransistor can have high field-effect mobility. In addition, thetransistor can have high reliability.

An oxide semiconductor with a low carrier density is preferably used fora channel region of the transistor. For example, an oxide semiconductorwhose carrier density is lower than 8×10¹¹/cm³, preferably lower than1×10¹¹/cm³, further preferably lower than 1×10¹⁰/cm³, and greater thanor equal to 1×10⁻⁹/cm³ is used.

A highly purified intrinsic or substantially highly purified intrinsicoxide semiconductor has few carrier generation sources and thus can havea low carrier density. The highly purified intrinsic or substantiallyhighly purified intrinsic oxide semiconductor has a low density ofdefect states and accordingly has a low density of trap states in somecases.

Charge trapped by the trap states in the oxide semiconductor takes along time to be released and may behave like fixed charge. Thus, atransistor whose channel region is formed in an oxide semiconductorhaving a high density of trap states has unstable electricalcharacteristics in some cases.

In order to obtain stable electrical characteristics of the transistor,it is effective to reduce the concentration of impurities in the oxidesemiconductor. In addition, in order to reduce the concentration ofimpurities in the oxide semiconductor, the concentration of impuritiesin a film that is adjacent to the oxide semiconductor is preferablyreduced. Examples of impurities include hydrogen, nitrogen, alkalimetal, alkaline earth metal, iron, nickel, and silicon.

Here, the influence of impurities in the oxide semiconductor isdescribed.

When silicon or carbon that is one of Group 14 elements is contained inthe oxide semiconductor, defect states are formed. Thus, theconcentration of silicon or carbon in the oxide semiconductor and aroundan interface with the oxide semiconductor (measured by secondary ionmass spectrometry (SIMS)) is set lower than or equal to 2×10¹⁸atoms/cm³, and preferably lower than or equal to 2×10¹⁷ atoms/cm³.

When the oxide semiconductor contains alkali metal or alkaline earthmetal, defect states are formed and carriers are generated, in somecases. Thus, a transistor including an oxide semiconductor that containsalkali metal or alkaline earth metal is likely to be normally-on.Therefore, it is preferable to reduce the concentration of alkali metalor alkaline earth metal in the oxide semiconductor. Specifically, theconcentration of alkali metal or alkaline earth metal in the oxidesemiconductor measured by SIMS is set lower than or equal to 1×10¹⁸atoms/cm³, and preferably lower than or equal to 2×10¹⁶ atoms/cm³.

When the oxide semiconductor contains nitrogen, the oxide semiconductoreasily becomes n-type by generation of electrons serving as carriers andan increase of carrier density. Thus, a transistor whose semiconductorincludes an oxide semiconductor that contains nitrogen is likely to benormally-on. For this reason, nitrogen in the oxide semiconductor ispreferably reduced as much as possible; for example, the concentrationof nitrogen in the oxide semiconductor, which is measured by SIMS, canbe lower than 5×10¹⁹ atoms/cm³, preferably lower than or equal to 5×10¹⁸atoms/cm³, further preferably lower than or equal to 1×10¹⁸ atoms/cm³,and still preferably lower than or equal to 5×10¹⁷ atoms/cm³.

Hydrogen contained in an oxide semiconductor reacts with oxygen bondedto a metal atom to be water, and thus causes an oxygen vacancy, in somecases. Due to entry of hydrogen into the oxygen vacancy, an electronserving as a carrier is generated in some cases. Furthermore, in somecases, bonding of part of hydrogen to oxygen bonded to a metal atomcauses generation of an electron serving as a carrier. Thus, atransistor including an oxide semiconductor that contains hydrogen islikely to be normally-on. Accordingly, it is preferable that hydrogen inthe oxide semiconductor be reduced as much as possible. Specifically,the hydrogen concentration of the oxide semiconductor measured by SIMSis set lower than 1×10²⁰ atoms/cm³, preferably lower than 1×10¹⁹atoms/cm³, further preferably lower than 5×10¹⁸ atoms/cm³, and stillfurther preferably lower than 1×10¹⁸ atoms/cm³.

When an oxide semiconductor with a sufficiently reduced impurityconcentration is used for a channel formation region in a transistor,the transistor can have stable electrical characteristics.

The energy gap of the oxide semiconductor film is preferably 2 eV ormore, 2.5 eV or more, or 3 eV or more.

The thickness of the oxide semiconductor film is greater than or equalto 3 nm and less than or equal to 200 nm, preferably greater than orequal to 3 nm and less than or equal to 100 nm, further preferablygreater than or equal to 3 nm and less than or equal to 60 nm.

When the oxide semiconductor film is an In—M—Zn oxide, as the atomicratio of metal elements in a sputtering target used for formation of theIn—M—Zn oxide, In:M:Zn=1:1:0.5, In:M:Zn=1:1:1, In:M:Zn=1:1:1.2,In:M:Zn=2:1:1.5, In:M:Zn=2:1:2.3, In:M:Zn=2:1:3, In:M:Zn=3:1:2,In:M:Zn=4:2:4.1, In:M:Zn=5:1:7, or the like is preferable.

Note that the atomic ratios of metal elements in the formed oxidesemiconductor films may each vary from the above atomic ratio of metalelements in the sputtering target within a range of approximately ±40%.For example, when a sputtering target with an atomic ratio ofIn:Ga:Zn=4:2:4.1 is used, the atomic ratio of In to Ga and Zn in theoxide semiconductor film may be approximately 4:2:3. In the case where asputtering target whose atomic ratio of In to Ga and Zn is 5:1:7 isused, the atomic ratio of In to Ga and Zn in the formed oxidesemiconductor film may be approximately 5:1:6.

<2-3. Structure of Oxide Semiconductor>

Described below is the composition of a cloud-aligned compose oxidesemiconductor (CAC-OS) applicable to a transistor disclosed in oneembodiment of the present invention.

The CAC-OS has, for example, a composition in which elements included inan oxide semiconductor are unevenly distributed. Materials includingunevenly distributed elements each have a size of greater than or equalto 0.5 nm and less than or equal to 10 nm, preferably greater than orequal to 1 nm and less than or equal to 2 nm, or a similar size. Notethat in the following description of an oxide semiconductor, a state inwhich one or more metal elements are unevenly distributed and regionsincluding the metal element(s) are mixed is referred to as a mosaicpattern or a patch-like pattern. The region has a size of greater thanor equal to 0.5 nm and less than or equal to 10 nm, preferably greaterthan or equal to 1 nm and less than or equal to 2 nm, or a similar size.

Note that an oxide semiconductor preferably contains at least indium. Inparticular, indium and zinc are preferably contained. In addition, oneor more of aluminum, gallium, yttrium, copper, vanadium, beryllium,boron, silicon, titanium, iron, nickel, germanium, zirconium,molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten,magnesium, and the like may be contained.

For example, of the CAC-OS, an In—Ga—Zn oxide with the CAC composition(such an In—Ga—Zn oxide may be particularly referred to as CAC-IGZO) hasa composition in which materials are separated into indium oxide(InO_(X2), where X1 is a real number greater than 0) or indium zincoxide (In_(X2)Zn_(Y2)O_(Z2), where X2, Y2, and Z2 are real numbersgreater than 0), and gallium oxide (GaO_(X3), where X3 is a real numbergreater than 0) or gallium zinc oxide (Ga_(X4)Zn_(Y4)O_(Z4), where X4,Y4, and Z4 are real numbers greater than 0), and a mosaic pattern isformed. Then, InO_(X1) or In_(X2)Zn_(Y2)O_(Z2) forming the mosaicpattern is evenly distributed in the film. This composition is alsoreferred to as a cloud-like composition.

That is, the CAC-OS is a composite oxide semiconductor with acomposition in which a region including GaO_(X3) as a main component anda region including In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) as a main componentare mixed. Note that in this specification, for example, when the atomicratio of In to an element M in a first region is greater than the atomicratio of In to the element M in a second region, the first region has ahigher In concentration than the second region.

Note that a compound including In, Ga, Zn, and O is also known as IGZO.Typical examples of IGZO include a crystalline compound represented byInGaO₃(ZnO)_(m1) (m1 is a natural number) and a crystalline compoundrepresented by In(₁x0)Ga(_(1 x)0)O₃(ZnO)_(m0) (−1≤x0≤1; m0 is a givennumber).

The above crystalline compounds have a single crystal structure, apolycrystalline structure, or a CAAC structure. Note that the CAACstructure is a crystal structure in which a plurality of IGZOnanocrystals have c-axis alignment and are connected in the a-b planedirection without alignment.

On the other hand, the CAC-OS relates to the material composition of anoxide semiconductor. In a material composition of a CAC-OS including In,Ga, Zn, and O, nanoparticle regions including Ga as a main component areobserved in part of the CAC-OS and nanoparticle regions including In asa main component are observed in part thereof. These nanoparticleregions are randomly dispersed to form a mosaic pattern. Therefore, thecrystal structure is a secondary element for the CAC-OS.

Note that in the CAC-OS, a stacked-layer structure including two or morefilms with different atomic ratios is not included. For example, atwo-layer structure of a film including In as a main component and afilm including Ga as a main component is not included.

A boundary between the region including GaO_(X3) as a main component andthe region including In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) as a maincomponent is not clearly observed in some cases.

In the case where one or more of aluminum, yttrium, copper, vanadium,beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium,molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten,magnesium, and the like are contained instead of gallium in a CAC-OS,nanoparticle regions including the selected metal element(s) as a maincomponent(s) are observed in part of the CAC-OS and nanoparticle regionsincluding In as a main component are observed in part thereof, and thesenanoparticle regions are randomly dispersed to form a mosaic pattern inthe CAC-OS.

The CAC-OS can be formed by a sputtering method under conditions where asubstrate is not heated intentionally, for example. In the case offorming the CAC-OS by a sputtering method, one or more selected from aninert gas (typically, argon), an oxygen gas, and a nitrogen gas may beused as a deposition gas. The percentage of oxygen gas flow rate in thetotal flow rate of the deposition gas at the time of deposition ispreferably as low as possible, and for example, the percentage of oxygengas flow rate is preferably higher than or equal to 0% and less than30%, further preferably higher than or equal to 0% and less than orequal to 10%.

The CAC-OS is characterized in that no clear peak is observed inmeasurement using θ/2θ scan by an out-of-plane method, which is an X-raydiffraction (XRD) measurement method. That is, X-ray diffraction showsno alignment in the a-b plane direction and the c-axis direction in ameasured region.

In an electron diffraction pattern of the CAC-OS which is obtained byirradiation with an electron beam with a probe diameter of 1 nm (alsoreferred to as a nanometer-sized electron beam), a ring-like region withhigh luminance and a plurality of bright spots in the ring-like regionare observed. Therefore, the electron diffraction pattern indicates thatthe crystal structure of the CAC-OS includes a nanocrystal (nc)structure with no alignment in plan-view and cross-sectional directions.

For example, an energy dispersive X-ray spectroscopy (EDX) mapping imageconfirms that an In—Ga—Zn oxide with the CAC composition has a structurein which a region including GaO_(X3) as a main component and a regionincluding In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) are unevenly distributed andmixed.

The CAC-OS has a structure different from that of an IGZO compound inwhich metal elements are evenly distributed, and has characteristicsdifferent from those of the IGZO compound. That is, in the CAC-OS,regions including GaO_(X3) or the like as a main component and regionsincluding In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) as a main component areseparated to form a mosaic pattern.

The conductivity of a region including In_(X2)Zn_(Y2)O_(Z2) or InO_(X1)as a main component is higher than that of a region including GaO_(X3)or the like as a main component. In other words, when carriers flowthrough regions including In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) as a maincomponent, the conductivity of an oxide semiconductor is exhibited.Accordingly, when regions including In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) asa main component are distributed in an oxide semiconductor like a cloud,high field-effect mobility (μ) can be achieved.

In contrast, the insulating property of a region including GaO_(X3) orthe like as a main component is higher than that of a region includingIn_(X2)Zn_(Y2)O_(Z2) or InO_(X1) as a main component. In other words,when regions including GaO_(X3) or the like as a main component aredistributed in an oxide semiconductor, leakage current can be suppressedand favorable switching operation can be achieved.

Accordingly, when a CAC-OS is used for a semiconductor element, theinsulating property derived from GaO_(X3) or the like and theconductivity derived from In_(X2)Zn_(Y2)O_(Z2) or InO_(X1) complementeach other, whereby high on-state current (I_(on)) and high field-effectmobility (μ) can be achieved.

A semiconductor element including a CAC-OS has high reliability. Thus,the CAC-OS is suitably used in a variety of semiconductor devicestypified by a display.

At least part of this embodiment can be implemented in combination withany of the other embodiments described in this specification asappropriate.

Embodiment 4

An oxide conductor is suitably used for the conductive film 112 includedin the transistor 100 of one embodiment of the present invention becauseexcess oxygen can be added to the insulating film 110 and the oxygen canbe then diffused to the first region 108 i of the oxide semiconductorfilm 108. In that case, it is possible to reduce defects in theinsulating film 110 including a silicon oxynitride film. In thisembodiment, defects in the insulating film 110 when an oxide conductoris used for the conductive film 112 will be described.

Defects in the silicon oxynitride film affect leakage current generatedwhen an electric field is applied between films above and below thesilicon oxynitride film. Thus, when a metal-oxide-silicon (MOS) samplehaving a metal film over a silicon oxynitride film and an MOS samplehaving an oxide conductor over a silicon oxynitride film are fabricatedand leakage current in the silicon oxynitride films in the MOS samplesis measured, data on defects in the silicon oxynitride films can beobtained.

For the assessment of defects in the insulating film 110 when an oxideconductor is used for the conductive film 112, two samples, a first MOSsample 317 and a second MOS sample 318, are prepared. In the first MOSsample 317, a 10-nm-thick silicon oxynitride film is formed over asilicon substrate to which impurities imparting p-type conductivity areadded, and a metal film is formed over the silicon oxynitride film.

In the second MOS sample 318, a 10-nm-thick silicon oxynitride film isformed over a silicon substrate to which impurities imparting p-typeconductivity are added, an oxide conductive film is formed over thesilicon oxynitride film, and a metal film is formed over the oxideconductive film.

Each of the metal films is formed using 30-nm-thick titanium nitride,135-nm-thick tungsten thereover, and 200-nm-thick aluminum thereover.The oxide conductive film is formed by a sputtering method using anIn—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) in an atmospherecontaining an oxygen gas (100%).

In a high electric field region, Fowler-Nordheim (F-N) current isdominant in current that flows in the silicon oxynitride film. The F-Ncurrent is represented by J_(FN) in Formula 1.

J _(FN)=(q ² E ² m/8πhΦ _(b) m ⁺)*exp{−[4√{square root over (2 m*)}(qΦ_(b))^(3/2)/3qhE]}  [Formula 1]

A straight line can be obtained by plotting ln(J/E²) and 1/E, which areobtained from Formula 1. In the case where there is a deep defect state,the F-N plot partly deviates from the straight line. A region deviatingfrom the straight line, called a ledge region, is caused by a processfor trapping an electron of the F-N current into a deep defect state.Specifically, a trapped electron forms a fixed charge and causes aparallel shift of the I−V curve, so that a ledge region is formed. Thetrapped charge density can be estimated from the amount of the parallelshift.

FIG. 10A is an energy band diagram of a metal region 310, an oxideregion 311, and a silicon region 312 in a MOS structure.

A film corresponding to the oxide region 311 is the silicon oxynitridefilm in each of the cases of the first MOS sample 317 and the second MOSsample 318. A film corresponding to the metal region 310 is the metalfilm in the case of the first MOS sample 317, and the oxide conductivefilm and the metal film thereover in the case of the second MOS sample318.

When voltage is applied between the films above and below the siliconoxynitride film, injection 315 of an electron in the metal region 310into a trap 314 in the oxide region 311 occurs as shown in FIG. 10A.

A trapped charge density (Q_(t)(t)) and a centroid position 316 of atrapped charge (x) are able to be estimated from Formula 2 for the casewhere a positive charge is trapped by the trap state, Formula 3 for thecase where a negative charge is trapped by the trap state, and theamount of shift in the I−V curve (ΔV_(g)) before and after chargeinjection. In Formula2, t_(ox) means the thickness of the oxide region311.

ΔV _(g)(+)=Q _(t)(t)/ε₀ε_(ox)(t _(ox)−x)   [Formula 2]

ΔV _(g)(−)=Q _(t)(t)/ε₀ε_(ox) x   [Formula 3]

Here, the centroid position 316 of the trapped charge in the oxideregion 311 is represented by the distance from the interface with thesilicon region 312. Note that the surface density of the total trappedcharge in the oxide region 311 can be calculated from the chargeinjection time dependence of the trapped charge density.

FIG. 10B shows the surface density of the total trapped charge in theoxide region obtained in the above manner, and FIG. 10C shows thecentroid position of the trapped charge. The results indicate that thesecond MOS sample 318 has a lower surface density of the total trappedcharge in the silicon oxynitride film than the first MOS sample 317.Moreover, the centroid position 316 of the trapped charge of the secondMOS sample 318 becomes farther from an electrode than that of the firstMOS sample 317.

In the F-N plot (see FIG. 11A), a ledge region 321 found in themeasurement result of the first MOS sample 317 is not found in themeasurement result of the second MOS sample 318. The longitudinal axisin FIG. 11A represents ln(J/E²) [A/MV²], which corresponds to theleakage current per unit area. FIGS. 10A to 10C and FIGS. 11A and 11Bindicate that the trapped charge density (the density of electronstrapped by deep defect states) in the silicon oxynitride film in thesecond MOS sample 318 is decreased because the oxide conductive film isformed over the silicon oxynitride film.

FIG. 11B schematically illustrates structures of the first MOS sample317 and the second MOS sample 318. Each of the samples includes silicon319, a silicon oxynitride film 326, and a metal film 325. The second MOSsample 318 further includes an oxide conductive film 313. In the firstMOS sample 317 in which the metal film 325 is formed over the siliconoxynitride film 326, a centroid position 328 of a trapped charge 327 inthe silicon oxynitride film 326 is almost in the middle of the siliconoxynitride film 326, indicating that defects might exist uniformly inthe silicon oxynitride film 326 (see FIG. 11B). In contrast, in the caseof using the oxide conductive film 313, a centroid position 329 of thetrapped charge 327 is close to the interface between the silicon 319 andthe silicon oxynitride film 326, and the trapped charge density is low.The above results suggest that the defect density in the siliconoxynitride film 326 in a region close to the oxide conductive film 313is reduced owing to the formation of the oxide conductive film 313.

As described above, the use of an oxide conductor for the conductivefilm 112 in the transistor 100 of one embodiment of the presentinvention can reduce the defect density in the insulating film 110.

Embodiment 5

In this embodiment, the characteristics of the transistor 100 in thecase where a silicon oxynitride film is formed for the insulating film110 at a substrate temperature of 350° C. will be described.

The insulating film 110 functioning as the gate insulating film of thetransistor 100 of one embodiment of the present invention desirably hasfew defects, causes less damage to the oxide semiconductor film 108, andsupplies excess oxygen to the oxide semiconductor film 108, for example.

In Embodiment 1, a silicon oxynitride film formed by a plasma-enhancedchemical vapor deposition method is used for the insulating film 110functioning as the gate insulating film of the transistor 100 of oneembodiment of the present invention. As described in Embodiment 1,excess oxygen are added to vacancies in a silicon oxynitride film thatis formed at low temperatures, and a large amount of excess oxygen canbe absorbed or supplied to the oxide semiconductor film.

A silicon oxynitride film that is formed at high temperatures can have ahigh film density, that is, have few defects. Thus, to increase thereliability, it is effective for the insulating film 110 to have astacked-layer structure of a silicon oxynitride film formed at asubstrate temperature of 350° C. and a silicon oxynitride film formed ata substrate temperature of 220° C., over the first region 108 i of theoxide semiconductor film 108.

Considering the productivity of the insulating film 110 having astacked-layer structure, the stacked films are desirably formed at thesame temperature.

FIG. 12A shows the comparison result of wet etching rates of siliconoxynitride films. In each of a sample 351 and a sample 352, a siliconoxynitride film was formed over glass. A substrate temperature duringthe formation was 220° C. in the case of the sample 351, and a substratetemperature during the formation was 350° C. in the case of the sample352.

In each of the sample 351 and the sample 352, the silicon oxynitridefilm was formed by a plasma CVD method using a gas containing SiH₄ at 20sccm and N₂O at 3000 sccm. The deposition pressure was 200 Pa and thedeposition power was 100 W. In the wet etching, HF (0.5%) was used as asolution, and the temperature was set at room temperature.

As shown in FIG. 12A, the sample 352 has a lower etching rate. Thisindicates that a silicon oxynitride film formed at a substratetemperature of 350° C. can be denser than that formed at a substratetemperature of 220° C.

FIG. 12B shows the comparison result of silicon oxynitride filmsmeasured by FT-IR. In each of a sample 353 and a sample 354, a siliconoxynitride film was formed over a silicon wafer. A substrate temperatureduring the formation was 220° C. in the case of the sample 353, and asubstrate temperature during the formation was 350° C. in the case ofthe sample 354. A dotted line 357 at a wave number of 1050 cm⁻¹, whichis parallel to the longitudinal axis in FIG. 12B, indicates the wavenumber derived from a Si—O bond.

In each of the sample 353 and the sample 354, the silicon oxynitridefilm was formed by a plasma CVD method using a gas containing SiH₄ at 20sccm and N₂O at 3000 sccm. The deposition pressure was 200 Pa and thedeposition power was 100 W.

As shown in FIG. 12B, the sample 354 has the density of Si—O bondsslightly higher than that of the sample 353. This also indicates that asilicon oxynitride film formed at a substrate temperature of 350° C. canbe denser than that formed at a substrate temperature of 220° C.

FIG. 12C shows the comparison result of the nitrogen oxide (NO_(x))concentration in silicon oxynitride films measured by an ESR method. Thelongitudinal axis represents spin density. In each of a sample 355 and asample 356, a 10-nm-thick oxide semiconductor film was formed overglass, a 20-nm-thick silicon oxynitride film was formed, and a100-nm-thick oxide conductive film was formed thereover. Note that theoxide conductive film was removed before the ESR measurement.

The silicon oxynitride film was formed at a substrate temperature of220° C. in the sample 355 and at a substrate temperature of 350° C. inthe sample 356. In each of the sample 355 and the sample 356, the oxidesemiconductor film was formed by a sputtering method using an In—Ga—Znoxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) in an atmospherecontaining an argon gas (90%) and an oxygen gas (10%) at a substratetemperature of 130° C. The silicon oxynitride films were each formed bya plasma CVD method using a gas containing SiH₄ at 20 sccm and N₂O at3000 sccm. The deposition pressure was 200 Pa and the deposition powerwas 100 W. The oxide conductive films were each formed by a sputteringmethod using an In—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]).

FIG. 12C shows the spin density [spins/cm³] derived from nitrogen oxide(NO_(x)) after the formation of the silicon oxynitride film and afterthe removal of the oxide conductive film. As shown in FIG. 12C, asilicon oxynitride film can be formed to have a lower nitrogen oxide(NO_(x)) concentration when formed at a substrate temperature of 350° C.than when formed at a substrate temperature of 220° C.

The above results suggest that a silicon oxynitride film formed at asubstrate temperature of 350° C., which has a high density, few defects,and a low nitrogen oxide (NO_(x)) concentration, is preferably used forthe insulating film 110. However, when a silicon oxynitride film formedat a substrate temperature of 350° C. is used for the insulating film110, the resistance of the oxide semiconductor film 108 might bedecreased as shown in FIG. 43A.

To prevent the decrease in the resistance of the oxide semiconductorfilm 108, the following methods can be employed. One method is oxygenplasma treatment 361 performed using a plasma CVD apparatus after theformation of the insulating film 110 (see FIG. 13A). Another method isheat treatment performed after the formation of the insulating film 116(see FIG. 13B). The above treatments can promote the supply of excessoxygen 362 to the oxide semiconductor film 108. It is particularlypreferable to use both of the treatments.

The oxygen plasma treatment 361 using a plasma CVD apparatus after theformation of the insulating film 110 can be performed by a method whichwill be described in Example 1, for example. The heat treatment afterthe formation of the insulating film 116 can be performed at 350° C. ina nitrogen atmosphere for one hour, for example.

FIGS. 14A and 14B show the results of experiments performed todemonstrate that the heat treatment performed after the formation of theinsulating film 116 is effective for adding oxygen to the oxidesemiconductor film. In each sample used in the experiments, a100-nm-thick oxide semiconductor film was formed over a glass substrate,a 100-nm-thick silicon oxynitride film was formed thereover, a100-nm-thick oxide conductive film was formed thereover, and a100-nm-thick silicon nitride film was formed thereover.

The oxide semiconductor films were each formed by a sputtering methodusing an In—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]) in anatmosphere containing an argon gas (90%) and an oxygen gas (10%) at asubstrate temperature of 130° C.

The silicon oxynitride films were each formed to have a stacked-layerstructure of two layers formed under different conditions by a plasmaCVD method at a substrate temperature of 220° C. The first conditionswere as follows: a gas containing SiH₄ at 50 sccm and N₂O at 2000 sccmwas used, the deposition pressure was 20 Pa, and the deposition powerwas 100 W. A silicon oxynitride film formed under the first conditionshad a thickness of 30 nm. This film contained a small amount of NO_(x).The second conditions were as follows: a gas containing SiH₄ at 160 sccmand N₂O at 4000 sccm was used, the deposition pressure was 200 Pa, andthe deposition power was 1500 W. A silicon oxynitride film formed underthe second conditions had a thickness of 70 nm.

The oxide conductive films were each formed to have a stacked-layerstructure of two layers formed under different conditions using anIn—Ga—Zn oxide target (In:Ga:Zn=4:2:4.1 [atomic ratio]). The firstconditions were as follows: a sputtering method was used, an atmospherecontaining an ¹⁸O gas (100%) was used, and a substrate temperature wasset at 170° C. An oxide conductive film formed under the firstconditions had a thickness of 10 nm. The second conditions were asfollows: a sputtering method was used, an atmosphere containing an argongas (90%) and an ¹⁸O gas (10%) was used, and a substrate temperature wasset at 170° C. An oxide conductive film formed under the secondconditions had a thickness of 90 nm.

The silicon nitride film was formed under the following conditions: thesubstrate temperature was set at 220° C.; a silane gas at a flow rate of50 sccm, a nitrogen gas at a flow rate of 5000 sccm, and an ammonia gasat a flow rate of 100 sccm were introduced into a chamber; the pressurewas 200 Pa; and an RF power of 1000 W was supplied betweenparallel-plate electrodes provided in the plasma CVD apparatus.

A sample 365 was completed without heat treatment, a sample 366 wascompleted by performing heat treatment at 250° C. in a nitrogenatmosphere, and a sample 367 was completed by performing heat treatmentat 350° C. in a nitrogen atmosphere.

FIGS. 14A and 14B show the results of the ¹⁸O concentration distributionin the sample 365, the sample 366, and the sample 367 analyzed by SIMS.In each of the sample 365, the sample 366, and the sample 367, ¹⁸O wasused only when the oxide conductive film was formed; thus, if the ¹⁸Oconcentration is high in other films, the ¹⁸O is probably ¹⁸O diffusedfrom the oxide conductive film. The SIMS analysis was conducted whiledigging was performed from the substrate to the film surface side toobtain profiles.

In each of FIGS. 14A and 14B, the lateral axis represents the depth froma sample surface, and the longitudinal axis represents SIMS signalsobtained by detecting ¹⁸O in an oxide conductive film 368, a siliconoxynitride film 369, and an oxide semiconductor film 370. FIG. 14A showsthe quantified measurement results of the ¹⁸O concentration in thesilicon oxynitride film 369. FIG. 14B shows the quantified measurementresults of the ¹⁸O concentration in the oxide semiconductor film 370.

As apparent from the results in FIGS. 14A and 14B, when heat treatmentis performed after the formation of the silicon nitride film, the amountof oxygen diffused from the silicon oxynitride film to the oxidesemiconductor film can be increased.

FIG. 14C shows the results of experiments performed to find out at whichstep the heat treatment should be performed for effective addition ofoxygen to the oxide semiconductor film.

In a sample used in the experiments, a 40-nm-thick oxide semiconductorfilm was formed over a quartz substrate, a 150-nm-thick siliconoxynitride film was formed thereover, a 100-nm-thick oxide conductivefilm was formed thereover, and a 100-nm-thick silicon nitride film wasformed thereover. In FIG. 14C, the lateral axis represents the formationsteps, and the longitudinal axis represents the resistance of the oxidesemiconductor film. The formation steps are described below.

First, the oxide semiconductor film was formed over the substrate (StepA). The formation conditions of the oxide semiconductor film were thesame as the formation conditions of the oxide semiconductor films in thesamples 365 to 367. The resistance of the oxide semiconductor film wasmeasured after Step A.

Next, the silicon oxynitride film was formed over the oxidesemiconductor film (Step B). The silicon oxynitride film was formed by aplasma CVD method at a substrate temperature of 350° C. using a gascontaining SiH₄ at 20 sccm and N₂O at 3000 sccm. The deposition pressurewas 200 Pa and the deposition power was 100 W. The resistance of theoxide semiconductor film was measured after Step B.

Then, heat treatment was performed at 350° C. in a nitrogen atmosphere(Step C). The resistance of the oxide semiconductor film was measuredafter Step C.

After that, oxygen plasma treatment was performed at a substratetemperature of 350° C. (Step D). The oxygen plasma treatment wasperformed for 250 seconds under the following conditions: oxygen at aflow rate of 3000 sccm was introduced into a chamber, the pressure wasset to 40 Pa, and an RF power of 3000 W was supplied betweenparallel-plate electrodes provided in a plasma CVD apparatus. Theresistance of the oxide semiconductor film was measured after Step D.

Next, the oxide conductive film was formed (Step E). The formationconditions of the oxide conductive film were the same as the formationconditions of the oxide conductive films in the samples 365 to 367. Theresistance of the oxide semiconductor film was measured after Step E.

Subsequently, the silicon nitride film was formed (Step F). Theformation conditions of the silicon nitride film were the same as theformation conditions of the silicon nitride films in the samples 365 to367. The resistance of the oxide semiconductor film was measured afterStep F.

Then, heat treatment was performed at 250° C. in a nitrogen atmosphere(Step G1). The resistance of the oxide semiconductor film was measuredafter Step G1 Furthermore, heat treatment was performed on anothersample at 350° C. instead of at 250° C., in a nitrogen atmosphere (StepG2). The resistance of the oxide semiconductor film was measured afterStep G2.

As apparent from the resistances of the oxide semiconductor filmmeasured after Step A to Step G1 or Step G2 shown in FIG. 14C, theresistance of the oxide semiconductor film is decreased at the step offorming the silicon oxynitride and is greatly increased when heattreatment is performed at 350° C. after the formation of the siliconnitride film. Note that the resistances of the oxide semiconductor filmafter Step A and Step G2 are higher than 4.0×10⁷ Ω, which is the uppermeasurement limit of a resistance measurement apparatus.

The results indicate that supply of excess oxygen is promoted when heattreatment is performed at 350° C. after the formation of the siliconnitride film. The ¹⁸O concentration analyzed by SIMS, which is shown inFIGS. 14A and 14B, also indicates this promotion of supply of excessoxygen.

When oxygen plasma treatment was performed after the formation of thesilicon oxynitride film and heat treatment was performed at 350° C.after the formation of the silicon nitride film, the reliability of thetransistor 100 in which a silicon oxynitride film formed at 350° C. wasused for the insulating film 110 was equivalent to the reliability ofthe transistor 100 in which a silicon oxynitride film was formed at asubstrate temperature of 350° C. and then a silicon oxynitride film wasformed at a substrate temperature of 220° C. to form the insulating film110. Note that here, the reliability was measured by bias-temperaturestress tests described later in Example 1.

In other words, a silicon oxynitride film formed at a substratetemperature of 350° C., which has a high density and a low defectdensity, can be used for the insulating film 110 as long as treatmentfor supplying sufficient excess oxygen to the oxide semiconductor film108 is performed. In that case, the productivity can be improved.

The structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

Embodiment 6

In this embodiment, examples of a display device that includes thetransistor described in the above embodiments will be described belowwith reference to FIG. 15, FIG. 16, FIG. 17, FIG. 18, FIG. 19, and FIG.20.

FIG. 15 is a top view illustrating an example of a display device. Adisplay device 700 in FIG. 15 includes a pixel portion 702 provided overa first substrate 701, a source driver circuit portion 704 and a gatedriver circuit portion 706 that are provided over the first substrate701, a sealant 712 provided to surround the pixel portion 702, thesource driver circuit portion 704, and the gate driver circuit portion706, and a second substrate 705 provided to face the first substrate701. The first substrate 701 and the second substrate 705 are sealedwith the sealant 712. That is, the pixel portion 702, the source drivercircuit portion 704, and the gate driver circuit portion 706 areenclosed by the first substrate 701, the sealant 712, and the secondsubstrate 705. Although not illustrated in FIG. 15, a display element isprovided between the first substrate 701 and the second substrate 705.

In the display device 700, a flexible printed circuit (FPC) terminalportion 708 that is electrically connected to the pixel portion 702, thesource driver circuit portion 704, and the gate driver circuit portion706 is provided in a region different from the region that is over thefirst substrate 701 and surrounded by the sealant 712. Furthermore, anFPC 716 is connected to the FPC terminal portion 708, and a variety ofsignals and the like are supplied from the FPC 716 to the pixel portion702, the source driver circuit portion 704, and the gate driver circuitportion 706. Furthermore, a signal line 710 is connected to the pixelportion 702, the source driver circuit portion 704, the gate drivercircuit portion 706, and the FPC terminal portion 708. Through thesignal line 710, a variety of signals and the like are supplied from theFPC 716 to the pixel portion 702, the source driver circuit portion 704,the gate driver circuit portion 706, and the FPC terminal portion 708.

A plurality of gate driver circuit portions 706 may be provided in thedisplay device 700. The structure of the display device 700 is notlimited to the example shown here, in which the source driver circuitportion 704 and the gate driver circuit portion 706 as well as the pixelportion 702 are formed over the first substrate 701. For example, onlythe gate driver circuit portion 706 may be formed over the firstsubstrate 701, or only the source driver circuit portion 704 may beformed over the first substrate 701. In this case, a substrate overwhich a source driver circuit, a gate driver circuit, or the like isformed (e.g., a driver circuit board formed using a single-crystalsemiconductor film or a polycrystalline semiconductor film) may beformed on the first substrate 701. Note that there is no particularlimitation on the method for connecting the separately prepared drivercircuit board, and a chip on glass (COG) method, a wire bonding method,or the like can be used.

The pixel portion 702, the source driver circuit portion 704, and thegate driver circuit portion 706 included in the display device 700include a plurality of transistors.

The display device 700 can include a variety of elements. As examples ofthe elements, electroluminescent (EL) element (e.g., an EL elementcontaining organic and inorganic materials, an organic EL element, aninorganic EL element, or an LED), a light-emitting transistor element (atransistor that emits light depending on current), an electron emitter,a liquid crystal element, an electronic ink display, an electrophoreticelement, an electrowetting element, a plasma display panel (PDP), microelectro mechanical systems (MEMS) display (e.g., a grating light valve(GLV), a digital micromirror device (DMD), a digital micro shutter (DMS)element, or an interferometric modulator display (IMOD) element), and apiezoelectric ceramic display can be given.

An example of a display device including an EL element is an EL display.Examples of a display device including an electron emitter include afield emission display (FED) and an SED-type flat panel display (SED:surface-conduction electron-emitter display). An example of a displaydevice including a liquid crystal element is a liquid crystal display (atransmissive liquid crystal display, a transflective liquid crystaldisplay, a reflective liquid crystal display, a direct-view liquidcrystal display, or a projection liquid crystal display). An example ofa display device including an electronic ink display or anelectrophoretic element is electronic paper. In a transflective liquidcrystal display or a reflective liquid crystal display, some or all ofpixel electrodes may function as reflective electrodes. For example,some or all of pixel electrodes may contain aluminum, silver, or thelike. In this case, a memory circuit such as an SRAM can be providedunder the reflective electrodes, leading to lower power consumption.

As a display system of the display device 700, a progressive system, aninterlace system, or the like can be employed. Furthermore, colorelements controlled in pixels at the time of color display are notlimited to three colors: R, G, and B (R, G, and B correspond to red,green, and blue, respectively). For example, four pixels of an R pixel,a G pixel, a B pixel, and a W (white) pixel may be used. Alternatively,a color element may be composed of two colors of R, G, and B as inPenTile layout. The two colors may differ depending on the colorelements. Alternatively, one or more colors of yellow, cyan, magenta,and the like may be added to RGB. Note that the size of a display regionmay differ between dots of color elements. One embodiment of thedisclosed invention is not limited to a color display device; thedisclosed invention can also be applied to a monochrome display device.

A coloring layer (also referred to as a color filter) may be used toobtain a full-color display device in which white light (W) is used fora backlight (e.g., an organic EL element, an inorganic EL element, anLED, or a fluorescent lamp). For example, a red (R) coloring layer, agreen (G) coloring layer, a blue (B) coloring layer, and a yellow (Y)coloring layer can be combined as appropriate. With the use of thecoloring layer, high color reproducibility can be obtained as comparedwith the case without the coloring layer. Here, by providing a regionwith a coloring layer and a region without a coloring layer, white lightin the region without the coloring layer may be directly utilized fordisplay. By partly providing the region without a coloring layer, adecrease in the luminance of a bright image due to the coloring layercan be suppressed, and approximately 20% to 30% of power consumption canbe reduced in some cases. In the case where full-color display isperformed using a self-luminous element such as an organic EL element oran inorganic EL element, elements may emit light in their respectivecolors R, G, B, Y, and W. By using a self-luminous element, powerconsumption may be further reduced as compared with the case of using acoloring layer.

As a coloring system, any of the following systems may be used: theabove-described color filter system in which part of white light isconverted into red light, green light, and blue light through colorfilters; a three-color system in which red light, green light, and bluelight are used; and a color conversion system or a quantum dot system inwhich part of blue light is converted into red light or green light.

In this embodiment, a structure including a liquid crystal element as adisplay element and a structure including an EL element as a displayelement are described with reference to FIG. 16, FIG. 17, and FIG. 18.FIG. 16 and FIG. 17 are each a cross-sectional view taken along adashed-dotted line Q-R in FIG. 15 and illustrate the structure includinga liquid crystal element as a display element. FIG. 18 is across-sectional view taken along the dashed-dotted line Q-R in FIG. 15and illustrates the structure including an EL element as a displayelement.

Portions common to FIG. 16, FIG. 17, and FIG. 18 will be describedfirst, and then, different portions will be described.

<3-1. Portions Common to Display Devices>

The display device 700 in FIG. 16, FIG. 17, and FIG. 18 includes a leadwiring portion 711, the pixel portion 702, the source driver circuitportion 704, the FPC terminal portion 708, and the sealant 712. The leadwiring portion 711 includes the signal line 710. The pixel portion 702includes a transistor 750 and a capacitor 790. The source driver circuitportion 704 includes a transistor 752.

The transistor 750 and the transistor 752 each have a structure similarto that of the transistor 100B illustrated in FIGS. 3A and 3B. Note thatthe transistor 750 and the transistor 752 may each have the structure ofany of the other transistors described in the above embodiments.

The transistor used in this embodiment includes an oxide semiconductorfilm that is highly purified and in which formation of oxygen vacanciesare suppressed. The transistor can have low off-state current.Accordingly, an electrical signal such as an image signal can be heldfor a long time, and a long writing interval can be set in an on state.Accordingly, the frequency of refresh operation can be reduced, whichsuppresses power consumption.

In addition, the transistor used in this embodiment can have relativelyhigh field-effect mobility and thus is capable of high-speed operation.For example, in a liquid crystal display device that includes such atransistor capable of high-speed operation, a switching transistor in apixel portion and a driver transistor in a driver circuit portion can beformed over one substrate. That is, no additional semiconductor deviceformed using a silicon wafer or the like is needed as a driver circuit;therefore, the number of components of the semiconductor device can bereduced. In addition, by using the transistor capable of high-speedoperation in the pixel portion, a high-quality image can be provided.

The capacitor 790 includes a lower electrode and an upper electrode. Thelower electrode is formed through a step of processing a conductive filmto be a conductive film functioning as a first gate electrode of thetransistor 750. The upper electrode is formed through a step ofprocessing a conductive film to be a conductive film functioning assource and drain electrodes or a second gate electrode of the transistor750. Between the lower electrode and the upper electrode, an insulatingfilm formed through a step of forming an insulating film to be aninsulating film functioning as a first gate insulating film of thetransistor 750 and insulating films formed through a step of forminginsulating films to be insulating films functioning as protectiveinsulating films over the transistor 750 are provided. That is, thecapacitor 790 has a stacked-layer structure in which an insulating filmfunctioning as a dielectric film is positioned between the pair ofelectrodes.

In FIG. 16, FIG. 17, and FIG. 18, a planarization insulating film 770 isprovided over the transistor 750, the transistor 752, and the capacitor790.

Although FIG. 16, FIG. 17, and FIG. 18 each illustrate an example inwhich the transistor 750 included in the pixel portion 702 and thetransistor 752 included in the source driver circuit portion 704 havethe same structure, one embodiment of the present invention is notlimited thereto. For example, the pixel portion 702 and the sourcedriver circuit portion 704 may include different transistors.Specifically, a structure in which a top-gate transistor is used in thepixel portion 702 and a bottom-gate transistor is used in the sourcedriver circuit portion 704, or a structure in which a bottom-gatetransistor is used in the pixel portion 702 and a top-gate transistor isused in the source driver circuit portion 704 may be employed. Note thatthe term “source driver circuit portion 704” can be replaced by the term“gate driver circuit portion.”

The signal line 710 is formed through the same process as the conductivefilms functioning as source electrodes and drain electrodes of thetransistors 750 and 752. In the case where the signal line 710 is formedusing a material containing a copper, signal delay or the like due towiring resistance is reduced, which enables display on a large screen.

The FPC terminal portion 708 includes a connection electrode 760, ananisotropic conductive film 780, and the FPC 716. Note that theconnection electrode 760 is formed through the same process as theconductive films functioning as source electrodes and drain electrodesof the transistors 750 and 752. The connection electrode 760 iselectrically connected to a terminal included in the FPC 716 through theanisotropic conductive film 780.

For example, glass substrates can be used as the first substrate 701 andthe second substrate 705. As the first substrate 701 and the secondsubstrate 705, flexible substrates may also be used. An example of theflexible substrate is a plastic substrate.

A structure 778 is provided between the first substrate 701 and thesecond substrate 705. The structure 778 is a columnar spacer obtained byselective etching of an insulating film and is provided to control thedistance (cell gap) between the first substrate 701 and the secondsubstrate 705. Alternatively, a spherical spacer may also be used as thestructure 778.

A light-blocking film 738 functioning as a black matrix, a coloring film736 functioning as a color filter, and an insulating film 734 in contactwith the light-blocking film 738 and the coloring film 736 are providedon the second substrate 705 side.

<3-2. Structure Example of Display Device Including Liquid CrystalElement>

The display device 700 in FIG. 16 includes a liquid crystal element 775.The liquid crystal element 775 includes a conductive film 772, aconductive film 774, and a liquid crystal layer 776. The conductive film774 is provided on the second substrate 705 side and functions as acounter electrode. The display device 700 in FIG. 16 can display animage in such a manner that transmission or non-transmission of light iscontrolled by the alignment state in the liquid crystal layer 776 thatis changed depending on the voltage applied between the conductive film772 and the conductive film 774.

The conductive film 772 is electrically connected to the conductive filmfunctioning as the source electrode or the drain electrode of thetransistor 750. The conductive film 772 is formed over the planarizationinsulating film 770 and functions as a pixel electrode, that is, oneelectrode of the display element.

A conductive film that transmits visible light or a conductive film thatreflects visible light can be used as the conductive film 772. Forexample, a material containing an element selected from indium (In),zinc (Zn), and tin (Sn) may be used for the conductive film thattransmits visible light. For example, a material containing aluminum orsilver may be used for the conductive film that reflects visible light.

In the case where a conductive film that reflects visible light is usedas the conductive film 772, the display device 700 is a reflectiveliquid crystal display device. In the case where a conductive film thattransmits visible light is used as the conductive film 772, the displaydevice 700 is a transmissive liquid crystal display device.

The method for driving the liquid crystal element can be changed bychanging the structure over the conductive film 772, an example of thiscase is illustrated in FIG. 17. The display device 700 illustrated inFIG. 17 is an example of employing a horizontal electric field mode(e.g., an FFS mode) as a driving mode of the liquid crystal element. Inthe structure illustrated in FIG. 17, an insulating film 773 is providedover the conductive film 772, and the conductive film 774 is providedover the insulating film 773. In such a structure, the conductive film774 functions as a common electrode, and an electric field generatedbetween the conductive film 772 and the conductive film 774 through theinsulating film 773 can control the alignment state in the liquidcrystal layer 776.

Although not illustrated in FIG. 16 and FIG. 17, the conductive film 772and/or the conductive film 774 may be provided with an alignment film ona side in contact with the liquid crystal layer 776. Although notillustrated in FIG. 16 and FIG. 17, an optical member (opticalsubstrate) or the like, such as a polarizing member, a retardationmember, or an anti-reflection member, may be provided as appropriate.For example, circular polarization may be obtained by using a polarizingsubstrate and a retardation substrate. In addition, a backlight, asidelight, or the like may be used as a light source.

In the case where a liquid crystal element is used as the displayelement, a thermotropic liquid crystal, a low-molecular liquid crystal,a high-molecular liquid crystal, a polymer dispersed liquid crystal, aferroelectric liquid crystal, an anti-ferroelectric liquid crystal, orthe like can be used. These liquid crystal materials exhibit acholesteric phase, a smectic phase, a cubic phase, a chiral nematicphase, an isotropic phase, or the like depending on conditions.

In the case where a horizontal electric field mode is employed, a liquidcrystal exhibiting a blue phase for which an alignment film isunnecessary may be used. The blue phase is one of liquid crystal phases,which is generated just before a cholesteric phase changes into anisotropic phase when the temperature of a cholesteric liquid crystal isincreased. Since the blue phase appears only in a narrow temperaturerange, a liquid crystal composition in which several weight percent ormore of a chiral material is mixed is used for the liquid crystal layerin order to improve the temperature range. The liquid crystalcomposition containing a liquid crystal exhibiting a blue phase and achiral material has a short response time and optical isotropy, whicheliminates the need for an alignment process. An alignment film does notneed to be provided, and thus, rubbing treatment is not necessary;accordingly, electrostatic discharge damage caused by the rubbingtreatment can be prevented, and defects and damage of a liquid crystaldisplay device in the manufacturing process can be reduced. Moreover,the liquid crystal material that exhibits a blue phase has small viewingangle dependence.

In the case where a liquid crystal element is used as a display element,a twisted nematic (TN) mode, an in-plane switching (IPS) mode, a fringefield switching (FFS) mode, an axially symmetric aligned micro-cell(ASM) mode, an optical compensated birefringence (OCB) mode, aferroelectric liquid crystal (FLC) mode, an anti-ferroelectric liquidcrystal (AFLC) mode, or the like can be used.

Furthermore, a normally black liquid crystal display device such as avertical alignment (VA) mode transmissive liquid crystal display devicemay also be used. There are some examples of a vertical alignment mode;for example, a multi-domain vertical alignment (MVA) mode, a patternedvertical alignment (PVA) mode, and an ASV mode, or the like can beemployed.

<3-3. Display Device Including Light-Emitting Element>

The display device 700 illustrated in FIG. 18 includes a light-emittingelement 782. The light-emitting element 782 includes a conductive film772, an EL layer 786, and a conductive film 788. The display device 700illustrated in FIG. 18 can display an image by utilizing light emissionfrom the EL layer 786 of the light-emitting element 782. Note that theEL layer 786 contains an organic compound or an inorganic compound suchas a quantum dot.

Examples of materials that can be used for an organic compound include afluorescent material and a phosphorescent material. Examples ofmaterials that can be used for a quantum dot include a colloidal quantumdot material, an alloyed quantum dot material, a core-shell quantum dotmaterial, and a core quantum dot material. A material containingelements belonging to Groups 12 and 16, elements belonging to Groups 13and 15, or elements belonging to Groups 14 and 16, may be used.Alternatively, a quantum dot material containing an element such ascadmium (Cd), selenium (Se), zinc (Zn), sulfur (S), phosphorus (P),indium (In), tellurium (Te), lead (Pb), gallium (Ga), arsenic (As), oraluminum (Al) may be used.

The above-described organic compound and the inorganic compound can bedeposited by a method such as an evaporation method (including a vacuumevaporation method), a droplet discharge method (also referred to as anink-jet method), a coating method, or a gravure printing method. A lowmolecular material, a middle molecular material (including an oligomerand a dendrimer), or a high molecular material may be included in the ELlayer 786.

Here, a method for forming the EL layer 786 by a droplet dischargemethod is described with reference to FIGS. 21A to 21D. FIGS. 21A to 21Dare cross-sectional views illustrating the method for forming the ELlayer 786.

First, the conductive film 772 is formed over the planarizationinsulating film 770, and an insulating film 730 is formed to cover partof the conductive film 772 (see FIG. 21A).

Then, a droplet 784 is discharged to an exposed portion of theconductive film 772, which is an opening of the insulating film 730,from a droplet discharge apparatus 783, so that a layer 785 containing acomposition is formed. The droplet 784 is a composition containing asolvent and is attached to the conductive film 772 (see FIG. 21B).

Note that the step of discharging the droplet 784 may be performed underreduced pressure.

Next, the solvent is removed from the layer 785 containing thecomposition, and the resulting layer is solidified to form the EL layer786 (see FIG. 21C).

The solvent may be removed by drying or heating.

Next, the conductive film 788 is formed over the EL layer 786; thus, thelight-emitting element 782 is formed (see FIG. 21D).

When the EL layer 786 is formed by a droplet discharge method asdescribed above, the composition can be selectively discharged;accordingly, waste of material can be reduced. Furthermore, alithography process or the like for shaping is not needed, and thus, theprocess can be simplified and cost reduction can be achieved.

The droplet discharge method described above is a general term for ameans including a nozzle equipped with a composition discharge openingor a means to discharge droplets such as a head having one or aplurality of nozzles.

Next, a droplet discharge apparatus used for the droplet dischargemethod is described with reference to FIG. 22. FIG. 22 is a conceptualdiagram illustrating a droplet discharge apparatus 1400.

The droplet discharge apparatus 1400 includes a droplet discharge means1403. In addition, the droplet discharge means 1403 is equipped with ahead 1405 and a head 1412.

The heads 1405 and 1412 are connected to a control means 1407, and thiscontrol means 1407 is controlled by a computer 1410; thus, apreprogrammed pattern can be drawn.

The drawing may be conducted at a timing, for example, based on a marker1411 formed over a substrate 1402. Alternatively, the reference pointmay be determined on the basis of an outer edge of the substrate 1402.Here, the marker 1411 is detected by an imaging means 1404 and convertedinto a digital signal by an image processing means 1409. Then, thedigital signal is recognized by the computer 1410, and then, a controlsignal is generated and transmitted to the control means 1407.

An image sensor or the like using a charge coupled device (CCD) or acomplementary metal oxide semiconductor (CMOS) can be used as theimaging means 1404. Note that information about a pattern to be formedover the substrate 1402 is stored in a storage medium 1408, and acontrol signal is transmitted to the control means 1407 based on theinformation, so that each of the heads 1405 and 1412 of the dropletdischarge means 1403 can be individually controlled. The heads 1405 and1412 are supplied with a material to be discharged from material supplysources 1413 and 1414 through pipes, respectively.

Inside the head 1405, a space as indicated by a dotted line 1406 to befilled with a liquid material and a nozzle which is a discharge outletare provided. Although it is not shown, an inside structure of the head1412 is similar to that of the head 1405. When the nozzle sizes of theheads 1405 and 1412 are different from each other, different materialswith different widths can be discharged simultaneously. Each head candischarge and draw a plurality of light emitting materials. In the caseof drawing over a large area, the same material can be simultaneouslydischarged to be drawn from a plurality of nozzles in order to improvethroughput. When a large substrate is used, the heads 1405 and 1412 canfreely scan the substrate in directions indicated by arrows X, Y, and Zin FIG. 22, and a region in which a pattern is drawn can be freely set.Thus, a plurality of the same patterns can be drawn over one substrate.

Furthermore, a step of discharging the composition may be performedunder reduced pressure. A substrate may be heated when the compositionis discharged. After discharging the composition, either drying orbaking or both of them are performed. Both the drying and baking areheat treatments but different in purpose, temperature, and time period.The steps of drying and baking are performed under normal pressure orunder reduced pressure by laser irradiation, rapid thermal annealing,heating using a heating furnace, or the like. Note that there is noparticular limitation on the timing of the heat treatment and the numberof times of the heat treatment. The temperature for performing each ofthe steps of drying and baking in a favorable manner depends on thematerials of the substrate and the properties of the composition.

In the above-described manner, the EL layer 786 can be formed with thedroplet discharge apparatus.

Let's go back to the explanation of the display device 700 illustratedin FIG. 18.

In the display device 700 in FIG. 18, the insulating film 730 isprovided over the planarization insulating film 770 and the conductivefilm 772. The insulating film 730 covers part of the conductive film772. Note that the light-emitting element 782 has a top-emissionstructure. Thus, the conductive film 788 has a light-transmittingproperty and transmits light emitted from the EL layer 786. Although thetop-emission structure is described as an example in this embodiment,the structure is not limited thereto. For example, a bottom-emissionstructure in which light is emitted to the conductive film 772 side or adual-emission structure in which light is emitted to both the conductivefilm 772 side and the conductive film 788 side may also be employed.

The coloring film 736 is provided to overlap with the light-emittingelement 782, and the light-blocking film 738 is provided in the leadwiring portion 711 and the source driver circuit portion 704 to overlapwith the insulating film 730. The coloring film 736 and thelight-blocking film 738 are covered with the insulating film 734. Aspace between the light-emitting element 782 and the insulating film 734is filled with a sealing film 732. The structure of the display device700 is not limited to the example in FIG. 18, in which the coloring film736 is provided. For example, a structure without the coloring film 736may also be employed in the case where the EL layer 786 is formed byseparate coloring.

<3-4. Structure Example of Display Device Provided with Input/OutputDevice>

An input/output device may be provided in the display device 700illustrated in FIG. 17 and FIG. 18. As an example of the input/outputdevice, a touch panel or the like can be given.

FIG. 19 illustrates a structure in which the display device 700illustrated in FIG. 17 includes a touch panel 791. FIG. 20 illustrates astructure in which the display device 700 illustrated in FIG. 18includes the touch panel 791.

FIG. 19 is a cross-sectional view of the structure in which the touchpanel 791 is provided in the display device 700 illustrated in FIG. 17,and FIG. 20 is a cross-sectional view of the structure in which thetouch panel 791 is provided in the display device 700 illustrated inFIG. 18.

First, the touch panel 791 illustrated in FIG. 19 and FIG. 20 will bedescribed below.

The touch panel 791 illustrated in FIG. 19 and FIG. 20 is what is calledan in-cell touch panel provided between the substrate 705 and thecoloring film 736. The touch panel 791 is formed on the substrate 705side before the coloring film 736 is formed.

Note that the touch panel 791 includes the light-blocking film 738, aninsulating film 792, an electrode 793, an electrode 794, an insulatingfilm 795, an electrode 796, and an insulating film 797. Changes in themutual capacitance in the electrodes 793 and 794 can be detected when anobject such as a finger or a stylus approaches, for example.

A portion in which the electrode 793 intersects with the electrode 794is illustrated in the upper portion of the transistor 750 illustrated inFIG. 19 and FIG. 20. The electrode 796 is electrically connected to thetwo electrodes 793 between which the electrode 794 is sandwiched throughopenings provided in the insulating film 795. Note that a structure inwhich a region where the electrode 796 is provided is provided in thepixel portion 702 is illustrated in FIG. 19 and FIG. 20 as an example;however, one embodiment of the present invention is not limited thereto.For example, the region where the electrode 796 is provided may beprovided in the source driver circuit portion 704.

The electrode 793 and the electrode 794 are provided in a regionoverlapping with the light-blocking film 738. As illustrated in FIG. 19,it is preferable that the electrode 793 do not overlap with thelight-emitting element 775. As illustrated in FIG. 20, it is preferablethat the electrode 793 do not overlap with the liquid crystal element782. In other words, the electrode 793 has an opening in a regionoverlapping with the light-emitting element 782 and the liquid crystalelement 775. That is, the electrode 793 has a mesh shape. With such astructure, the electrode 793 does not block light emitted from thelight-emitting element 782, or alternatively the electrode 793 does notblock light transmitted through the liquid crystal element 775. Thus,since luminance is hardly reduced even when the touch panel 791 isprovided, a display device with high visibility and low powerconsumption can be obtained. Note that the electrode 794 can have astructure similar to that of the electrode 793.

Since the electrode 793 and the electrode 794 do not overlap with thelight-emitting element 782, a metal material having low transmittancewith respect to visible light can be used for the electrode 793 and theelectrode 794. Furthermore, since the electrode 793 and the electrode794 do not overlap with the liquid crystal element 775, a metal materialhaving low transmittance with respect to visible light can be used forthe electrode 793 and the electrode 794.

Thus, as compared with the case of using an oxide material whosetransmittance of visible light is high, resistance of the electrodes 793and 794 can be reduced, whereby sensitivity of the sensor of the touchpanel can be increased.

For example, a conductive nanowire may be used for the electrodes 793,794, and 796. The nanowire may have a mean diameter of greater than orequal to 1 nm and less than or equal to 100 nm, preferably greater thanor equal to 5 nm and less than or equal to 50 nm, further preferablygreater than or equal to 5 nm and less than or equal to 25 nm. As thenanowire, a carbon nanotube or a metal nanowire such as an Ag nanowire,a Cu nanowire, or an Al nanowire may be used. For example, in the casewhere an Ag nanowire is used for any one of or all of electrodes 793,794, and 796, the transmittance of visible light can be greater than orequal to 89% and the sheet resistance can be greater than or equal to 40Q/square and less than or equal to 100 Ω/square.

Although the structure of the in-cell touch panel is illustrated in FIG.19 and FIG. 20, one embodiment of the present invention is not limitedthereto. For example, a touch panel formed over the display device 700,what is called an on-cell touch panel, or a touch panel attached to thedisplay device 700, what is called an out-cell touch panel may be used.

In this manner, the display device of one embodiment of the presentinvention can be combined with various types of touch panels.

Note that the structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

Embodiment 7

In this embodiment, a display device including a semiconductor device ofone embodiment of the present invention will be described with referenceto FIGS. 23A to 23C.

<4. Circuit Configuration of Display Device>

A display device illustrated in FIG. 23A includes a region includingpixels of display elements (hereinafter referred to as a pixel portion502), a circuit portion that is provided outside the pixel portion 502and includes a circuit for driving the pixels (hereinafter, the circuitportion is referred to as a driver circuit portion 504), circuits havinga function of protecting elements (hereinafter, the circuits arereferred to as protection circuits 506), and a terminal portion 507.Note that the protection circuits 506 are not necessarily provided.

Part or the whole of the driver circuit portion 504 is preferably formedover a substrate over which the pixel portion 502 is formed. Thus, thenumber of components and the number of terminals can be reduced. Whenpart or the whole of the driver circuit portion 504 is not formed overthe substrate over which the pixel portion 502 is formed, the part orthe whole of the driver circuit portion 504 can be mounted by COG ortape automated bonding (TAB).

The pixel portion 502 includes a plurality of circuits for drivingdisplay elements arranged in X (X is a natural number of 2 or more) rowsand Y (Y is a natural number of 2 or more) columns (hereinafter, thecircuits are referred to as pixel circuits 501). The driver circuitportion 504 includes driver circuits such as a circuit for supplying asignal (scan signal) to select a pixel (hereinafter, the circuit isreferred to as a gate driver 504 a) and a circuit for supplying a signal(data signal) to drive a display element in a pixel (hereinafter, thecircuit is referred to as a source driver 504 b).

The gate driver 504 a includes a shift register or the like. The gatedriver 504 a receives a signal for driving the shift register throughthe terminal portion 507 and outputs a signal. For example, the gatedriver 504 a receives a start pulse signal, a clock signal, or the likeand outputs a pulse signal. The gate driver 504 a has a function ofcontrolling the potentials of wirings supplied with scan signals(hereinafter referred to as scan lines GL_1 to GL_X). Note that aplurality of gate drivers 504 a may be provided to control the scanlines GL_1 to GL_X separately. Alternatively, the gate driver 504 a hasa function of supplying an initialization signal. Without being limitedthereto, another signal can be supplied from the gate driver 504 a.

The source driver 504 b includes a shift register or the like. Thesource driver 504 b receives a signal (image signal) from which a datasignal is generated, as well as a signal for driving the shift register,through the terminal portion 507. The source driver 504 b has a functionof generating a data signal to be written to the pixel circuit 501 fromthe image signal. In addition, the source driver 504 b has a function ofcontrolling output of a data signal in response to a pulse signalproduced by input of a start pulse signal, a clock signal, or the like.Furthermore, the source driver 504 b has a function of controlling thepotentials of wirings supplied with data signals (hereinafter referredto as data lines DL_1 to DL_Y). Alternatively, the source driver 504 bhas a function of supplying an initialization signal. Without beinglimited thereto, another signal can be supplied from the source driver504 b.

The source driver 504 b includes a plurality of analog switches, forexample. The source driver 504 b can output, as data signals,time-divided image signals obtained by sequentially turning on theplurality of analog switches. The source driver 504 b may include ashift register or the like.

A pulse signal and a data signal are input to each of the plurality ofpixel circuits 501 through one of the plurality of scan lines GLsupplied with scan signals and one of the plurality of data lines DLsupplied with data signals, respectively. Writing and holding of thedata signal in each of the plurality of pixel circuits 501 arecontrolled by the gate driver 504 a. For example, to the pixel circuit501 in the m-th row and the n-th column (m is a natural number of X orless, and n is a natural number of Y or less), a pulse signal is inputfrom the gate driver 504 a through the scan line GL_m, and a data signalis input from the source driver 504 b through the data line DL n inaccordance with the potential of the scan line GL_m.

The protection circuit 506 in FIG. 23A is connected to, for example, thescan line GL between the gate driver 504 a and the pixel circuit 501.Alternatively, the protection circuit 506 is connected to the data lineDL between the source driver 504 b and the pixel circuit 501.Alternatively, the protection circuit 506 can be connected to a wiringbetween the gate driver 504 a and the terminal portion 507.Alternatively, the protection circuit 506 can be connected to a wiringbetween the source driver 504 b and the terminal portion 507. Note thatthe terminal portion 507 refers to a portion having terminals forinputting power, control signals, and image signals from externalcircuits to the display device.

The protection circuit 506 electrically connects a wiring connected tothe protection circuit to another wiring when a potential out of acertain range is supplied to the wiring connected to the protectioncircuit.

As illustrated in FIG. 23A, the protection circuits 506 provided for thepixel portion 502 and the driver circuit portion 504 can improve theresistance of the display device to overcurrent generated byelectrostatic discharge (ESD) or the like. Note that the configurationof the protection circuits 506 is not limited thereto; for example, theprotection circuit 506 can be connected to the gate driver 504 a or thesource driver 504 b. Alternatively, the protection circuit 506 can beconnected to the terminal portion 507.

One embodiment of the present invention is not limited to the example inFIG. 23A, in which the driver circuit portion 504 includes the gatedriver 504 a and the source driver 504 b. For example, only the gatedriver 504 a may be formed, and a separately prepared substrate overwhich a source driver circuit is formed (e.g., a driver circuit boardformed using a single-crystal semiconductor film or a polycrystallinesemiconductor film) may be mounted.

Each of the plurality of pixel circuits 501 in FIG. 23A can have theconfiguration illustrated in FIG. 23B, for example.

The pixel circuit 501 in FIG. 23B includes a liquid crystal element 570,a transistor 550, and a capacitor 560. As the transistor 550, thetransistor described in the above embodiment can be used.

The potential of one of a pair of electrodes of the liquid crystalelement 570 is set as appropriate in accordance with the specificationsof the pixel circuit 501. The alignment state of the liquid crystalelement 570 depends on data written thereto. A common potential may besupplied to the one of the pair of electrodes of the liquid crystalelement 570 included in each of the plurality of pixel circuits 501. Thepotential supplied to the one of the pair of electrodes of the liquidcrystal element 570 in the pixel circuit 501 may differ between rows.

Examples of a method for driving the display device including the liquidcrystal element 570 include a TN mode, an STN mode, a VA mode, anaxially symmetric aligned micro-cell (ASM) mode, an opticallycompensated birefringence (OCB) mode, a ferroelectric liquid crystal(FLC) mode, an anti-ferroelectric liquid crystal (AFLC) mode, an MVAmode, a patterned vertical alignment (PVA) mode, an IPS mode, an FFSmode, and a transverse bend alignment (TBA) mode. Other examples of themethod for driving the display device include an electrically controlledbirefringence (ECB) mode, a polymer-dispersed liquid crystal (PDLC)mode, a polymer network liquid crystal (PNLC) mode, and a guest-hostmode. Without being limited thereto, various liquid crystal elements anddriving methods can be used.

In the pixel circuit 501 in the m-th row and the n-th column, one of asource electrode and a drain electrode of the transistor 550 iselectrically connected to the data line DL_n, and the other of thesource electrode and the drain electrode of the transistor 550 iselectrically connected to the other of the pair of electrodes of theliquid crystal element 570. A gate electrode of the transistor 550 iselectrically connected to the scan line GL_m. The transistor 550 isconfigured to be turned on or off to control whether a data signal iswritten.

One of a pair of electrodes of the capacitor 560 is electricallyconnected to a wiring through which a potential is supplied (hereinafterreferred to as a potential supply line VL), and the other of the pair ofelectrodes of the capacitor 560 is electrically connected to the otherof the pair of electrodes of the liquid crystal element 570. Thepotential of the potential supply line VL is set as appropriate inaccordance with the specifications of the pixel circuit 501. Thecapacitor 560 functions as a storage capacitor for storing written data.

For example, in the display device including the pixel circuits 501 inFIG. 23B, the gate driver 504 a in FIG. 23A sequentially selects thepixel circuits 501 row by row to turn on the transistors 550, and datasignals are written.

When the transistor 550 is turned off, the pixel circuit 501 to whichthe data has been written is brought into a holding state. Thisoperation is sequentially performed row by row; thus, an image can bedisplayed.

Alternatively, each of the plurality of pixel circuits 501 in FIG. 23Acan have the configuration illustrated in FIG. 23C, for example.

The pixel circuit 501 in FIG. 23C includes transistors 552 and 554, acapacitor 562, and a light-emitting element 572. The transistordescribed in the above embodiment can be used as the transistor 552and/or the transistor 554.

One of a source electrode and a drain electrode of the transistor 552 iselectrically connected to a wiring through which a data signal issupplied (hereinafter referred to as a data line DL_n). A gate electrodeof the transistor 552 is electrically connected to a wiring throughwhich a gate signal is supplied (hereinafter referred to as a scan lineGL_m).

The transistor 552 is configured to be turned on or off to controlwhether a data signal is written.

One of a pair of electrodes of the capacitor 562 is electricallyconnected to a wiring through which a potential is supplied (hereinafterreferred to as a potential supply line VL_a), and the other of the pairof electrodes of the capacitor 562 is electrically connected to theother of the source electrode and the drain electrode of the transistor552.

The capacitor 562 functions as a storage capacitor for storing writtendata.

One of a source electrode and a drain electrode of the transistor 554 iselectrically connected to the potential supply line VL_a. A gateelectrode of the transistor 554 is electrically connected to the otherof the source electrode and the drain electrode of the transistor 552.

One of an anode and a cathode of the light-emitting element 572 iselectrically connected to a potential supply line VL_b, and the other ofthe anode and the cathode of the light-emitting element 572 iselectrically connected to the other of the source electrode and thedrain electrode of the transistor 554.

As the light-emitting element 572, an organic electroluminescent element(also referred to as an organic EL element) can be used, for example.Note that the light-emitting element 572 is not limited thereto and maybe an inorganic EL element including an inorganic material.

A high power supply potential V_(DD) is supplied to one of the potentialsupply line VL_a and the potential supply line VL_b, and a low powersupply potential V_(SS) is supplied to the other of the potential supplyline VL_a and the potential supply line VL_b.

In the display device including the pixel circuits 501 in FIG. 23C, thegate driver 504 a in FIG. 23A sequentially selects the pixel circuits501 row by row to turn on the transistors 552, and data signals arewritten.

When the transistor 552 is turned off, the pixel circuit 501 to whichthe data has been written is brought into a holding state. Furthermore,the amount of current flowing between the source electrode and the drainelectrode of the transistor 554 is controlled in accordance with thepotential of the written data signal. The light-emitting element 572emits light with a luminance corresponding to the amount of flowingcurrent. This operation is sequentially performed row by row; thus, animage can be displayed.

Note that the structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

Embodiment 8

In this embodiment, circuit configuration examples to which thetransistors described in the above embodiments can be applied will bedescribed with reference to FIGS. 24A to 24C, FIGS. 25A to 25C, FIGS.26A and 26B, and FIGS. 27A and 27B.

Note that in the following description in this embodiment, thetransistor including an oxide semiconductor described in the aboveembodiment is referred to as an OS transistor.

<5. Configuration Example of Inverter Circuit>

FIG. 24A is a circuit diagram of an inverter that can be used for ashift register, a buffer, or the like included in the driver circuit. Aninverter 800 outputs a signal whose logic is inverted from the logic ofa signal supplied to an input terminal IN to an output terminal OUT. Theinverter 800 includes a plurality of OS transistors. A signal S_(BG) canswitch electrical characteristics of the OS transistors.

FIG. 24B illustrates an example of the inverter 800. The inverter 800includes an OS transistor 810 and an OS transistor 820. The inverter 800can be formed using only n-channel transistors; thus, the inverter 800can be formed at lower cost than an inverter formed using acomplementary metal oxide semiconductor (i.e., a CMOS inverter).

Note that the inverter 800 including the OS transistors can be providedover a CMOS circuit including Si transistors. Since the inverter 800 canbe provided so as to overlap with the CMOS circuit, no additional areais required for the inverter 800, and thus, an increase in the circuitarea can be suppressed.

Each of the OS transistors 810 and 820 includes a first gate functioningas a front gate, a second gate functioning as a back gate, a firstterminal functioning as one of a source and a drain, and a secondterminal functioning as the other of the source and the drain.

The first gate of the OS transistor 810 is connected to its secondterminal. The second gate of the OS transistor 810 is connected to awiring that supplies the signal S_(BG). The first terminal of the OStransistor 810 is connected to a wiring that supplies a voltage V_(DD).The second terminal of the OS transistor 810 is connected to the outputterminal OUT.

The first gate of the OS transistor 820 is connected to the inputterminal IN. The second gate of the OS transistor 820 is connected tothe input terminal IN. The first terminal of the OS transistor 820 isconnected to the output terminal OUT. The second terminal of the OStransistor 820 is connected to a wiring that supplies a voltage V_(SS).

FIG. 24C is a timing chart illustrating the operation of the inverter800. The timing chart in FIG. 24C illustrates changes of a signalwaveform of the input terminal IN, a signal waveform of the outputterminal OUT, a signal waveform of the signal S_(BG), and the thresholdvoltage of the OS transistor 810.

The signal S_(BG) can be supplied to the second gate of the OStransistor 810 to control the threshold voltage of the OS transistor810.

The signal S_(BG) includes a voltage V_(BG) _(_) _(A) for shifting thethreshold voltage in the negative direction and a voltage V_(BG) _(_)_(B) for shifting the threshold voltage in the positive direction. Thethreshold voltage of the OS transistor 810 can be shifted in thenegative direction to be a threshold voltage V_(TH) _(_) _(A) when thevoltage V_(BG) _(_) _(A) is applied to the second gate. The thresholdvoltage of the OS transistor 810 can be shifted in the positivedirection to be a threshold voltage V_(TH) _(_) _(B) when the voltageV_(BG) _(_) _(B) is applied to the second gate.

To visualize the above description, FIG. 25A shows an I_(d)−V_(g) curve,which is one of the electrical characteristics of a transistor.

When a high voltage such as the voltage V_(BG) _(_) _(A) is applied tothe second gate, the electrical characteristics of the OS transistor 810can be shifted to match a curve shown by a dashed line 840 in FIG. 25A.When a low voltage such as the voltage V_(BG) _(_) _(B) is applied tothe second gate, the electrical characteristics of the OS transistor 810can be shifted to match a curve shown by a solid line 841 in FIG. 25A.As shown in FIG. 25A, switching the signal S_(BG) between the voltageV_(BG) _(_) _(A) and the voltage V_(BG) _(_) _(B) enables the thresholdvoltage of the OS transistor 810 to be shifted in the positive directionor the negative direction.

The shift of the threshold voltage in the positive direction toward thethreshold voltage V_(TH) _(_) _(B) can make current less likely to flowin the OS transistor 810. FIG. 25B visualizes this state.

As illustrated in FIG. 25B, a current I_(B) that flows in the OStransistor 810 can be extremely low. Thus, when a signal supplied to theinput terminal IN is at a high level and the OS transistor 820 is on(ON), the voltage of the output terminal OUT can drop sharply.

Since a state in which current is less likely to flow in the OStransistor 810 as illustrated in FIG. 25B can be obtained, a signalwaveform 831 of the output terminal in the timing chart in FIG. 24C canbe made steep. Shoot-through current between the wiring that suppliesthe voltage V_(DD) and the wiring that supplies the voltage V_(SS) canbe low, leading to low-power operation.

The shift of the threshold voltage in the negative direction toward thethreshold voltage V_(TH) _(_) _(A) can make current flow easily in theOS transistor 810. FIG. 25C visualizes this state. As illustrated inFIG. 25C, a current I_(A) flowing at this time can be higher than atleast the current I_(B). Thus, when a signal supplied to the inputterminal IN is at a low level and the OS transistor 820 is off (OFF),the voltage of the output terminal OUT can be increased sharply. Since astate in which current is likely to flow in the OS transistor 810 asillustrated in FIG. 25C can be obtained, a signal waveform 832 of theoutput terminal in the timing chart in FIG. 24C can be made steep.

Note that the threshold voltage of the OS transistor 810 is preferablycontrolled by the signal S_(BG) before the state of the OS transistor820 is switched, i.e., before time T1 or time T2. For example, as inFIG. 24C, it is preferable that the threshold voltage of the OStransistor 810 be switched from the threshold voltage V_(TH) _(_) _(A)to the threshold voltage V_(TH) _(_) _(A) before time T1 at which thelevel of the signal supplied to the input terminal IN is switched to ahigh level. Moreover, as in FIG. 24C, it is preferable that thethreshold voltage of the OS transistor 810 be switched from thethreshold voltage V_(TH) _(_) _(B) to the threshold voltage V_(TH) _(_)_(A) before time T2 at which the level of the signal supplied to theinput terminal IN is switched to a low level.

Although the timing chart in FIG. 24C illustrates the structure in whichthe level of the signal SBG is switched in accordance with the signalsupplied to the input terminal IN, a different structure may be employedin which voltage for controlling the threshold voltage is held by thesecond gate of the OS transistor 810 in a floating state, for example.FIG. 26A illustrates an example of such a circuit configuration.

The circuit configuration in FIG. 26A is the same as that in FIG. 24B,except that an OS transistor 850 is added. A first terminal of the OStransistor 850 is connected to the second gate of the OS transistor 810.A second terminal of the OS transistor 850 is connected to a wiring thatsupplies the voltage V_(BG) _(_) _(B) (or the voltage V_(BG) _(_) _(A)).A first gate of the OS transistor 850 is connected to a wiring thatsupplies a signal S_(F). A second gate of the OS transistor 850 isconnected to the wiring that supplies the voltage V_(BG) _(_) _(B) (orthe voltage V_(BG) _(_) _(A)).

The operation with the circuit configuration in FIG. 26A will bedescribed with reference to a timing chart in FIG. 26B.

The voltage for controlling the threshold voltage of the OS transistor810 is supplied to the second gate of the OS transistor 810 before timeT3 at which the level of the signal supplied to the input terminal IN isswitched to a high level. The signal SF is set to a high level and theOS transistor 850 is turned on, so that the voltage V_(BG) _(_) _(B) forcontrolling the threshold voltage is supplied to a node N_(BG).

The OS transistor 850 is turned off after the voltage of the node N_(BG)becomes V_(BG) _(_) _(B). Since the off-state current of the OStransistor 850 is extremely low, the voltage V_(BG) _(_) _(B) held bythe node N_(BG) can be retained while the OS transistor 850 remains offThus, the number of times the voltage V_(BG) _(_) _(B) is supplied tothe second gate of the OS transistor 850 can be reduced and accordingly,the power consumption for rewriting the voltage V_(BG) _(_) _(B) can bereduced.

Although FIG. 24B and FIG. 26A each illustrate the case where thevoltage is supplied to the second gate of the OS transistor 810 bycontrol from the outside, a different structure may be employed in whichvoltage for controlling the threshold voltage is generated on the basisof the signal supplied to the input terminal IN and supplied to thesecond gate of the OS transistor 810, for example. FIG. 27A illustratesan example of such a circuit configuration.

The circuit configuration in FIG. 27A is the same as that in FIG. 24B,except that a CMOS inverter 860 is provided between the input terminalIN and the second gate of the OS transistor 810. An input terminal ofthe CMOS inverter 860 is connected to the input terminal IN. An outputterminal of the CMOS inverter 860 is connected to the second gate of theOS transistor 810.

The operation with the circuit configuration in FIG. 27A is describedwith reference to a timing chart in FIG. 27B. The timing chart in FIG.27B illustrates changes of a signal waveform of the input terminal IN, asignal waveform of the output terminal OUT, an output waveform IN_B ofthe CMOS inverter 860, and a threshold voltage of the OS transistor 810.

The output waveform IN_B that corresponds to a signal whose logic isinverted from the logic of the signal supplied to the input terminal INcan be used as a signal that controls the threshold voltage of the OStransistor 810. Thus, the threshold voltage of the OS transistor 810 canbe controlled as described with reference to FIGS. 25A to 25C. Forexample, the signal supplied to the input terminal IN is at a high leveland the OS transistor 820 is turned on at time T4 in FIG. 27B. At thistime, the output waveform IN_B is at a low level. Accordingly, currentcan be made less likely to flow in the OS transistor 810; thus, thevoltage of the output terminal OUT can be sharply decreased.

Moreover, the signal supplied to the input terminal IN is at a low leveland the OS transistor 820 is turned off at time T5 in FIG. 27B. At thistime, the output waveform IN_B is at a high level. Accordingly, currentcan easily flow in the OS transistor 810; thus, a rise in the voltage ofthe output terminal OUT can be made steep.

As described above, in the configuration of the inverter including theOS transistor in this embodiment, the voltage of the back gate isswitched in accordance with the logic of the signal supplied to theinput terminal IN. In such a configuration, the threshold voltage of theOS transistor can be controlled. The control of the threshold voltage ofthe OS transistor by the signal supplied to the input terminal IN cancause a steep change in the voltage of the output terminal OUT.Moreover, shoot-through current between the wirings that supply powersupply voltages can be reduced. Thus, power consumption can be reduced.

Note that the structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

Embodiment 9

In this embodiment, examples of a semiconductor device in whichtransistors including an oxide semiconductor (OS transistors) describedin the above embodiment are used in a plurality of circuits will bedescribed with reference to FIGS. 28A to 28E, FIGS. 29A and 29B, FIGS.30A and 30B, and FIGS. 31A to 31C.

<6. Circuit Configuration Example of Semiconductor Device>

FIG. 28A is a block diagram of a semiconductor device 900. Thesemiconductor device 900 includes a power supply circuit 901, a circuit902, a voltage generation circuit 903, a circuit 904, a voltagegeneration circuit 905, and a circuit 906.

The power supply circuit 901 is a circuit that generates a voltageV_(ORG) used as a reference. The voltage V_(ORG) is not necessarily onevoltage and can be a plurality of voltages. The voltage V_(ORG) can begenerated on the basis of a voltage V₀ supplied from the outside of thesemiconductor device 900. The semiconductor device 900 can generate thevoltage V_(ORG) on the basis of one power supply voltage supplied fromthe outside. Thus, the semiconductor device 900 can operate without thesupply of a plurality of power supply voltages from the outside.

The circuits 902, 904, and 906 operate with different power supplyvoltages. For example, the power supply voltage of the circuit 902 is avoltage applied on the basis of the voltage V_(ORG) and the voltageV_(SS) (V_(ORG)>V_(SS)). For example, the power supply voltage of thecircuit 904 is a voltage applied on the basis of a voltage V_(POG) andthe voltage V_(SS) (V_(POG)>V_(ORG)). For example, the power supplyvoltages of the circuit 906 are voltages applied on the basis of thevoltage V_(ORG), the voltage V_(SS), and a voltage V_(NEG)(V_(ORG)>V_(SS)>V_(NEG)). When the voltage V_(SS) is equal to a groundpotential (GND), the kinds of voltages generated in the power supplycircuit 901 can be reduced.

The voltage generation circuit 903 is a circuit that generates thevoltage V_(POG). The voltage generation circuit 903 can generate thevoltage V_(POG) on the basis of the voltage V_(ORG) supplied from thepower supply circuit 901. Thus, the semiconductor device 900 includingthe circuit 904 can operate on the basis of one power supply voltagesupplied from the outside.

The voltage generation circuit 905 is a circuit that generates thevoltage V_(NEG). The voltage generation circuit 905 can generate thevoltage V_(NEG) on the basis of the voltage V_(ORG) supplied from thepower supply circuit 901. Thus, the semiconductor device 900 includingthe circuit 906 can operate on the basis of one power supply voltagesupplied from the outside.

FIG. 28B illustrates an example of the circuit 904 that operates withthe voltage V_(POG) and FIG. 28C illustrates an example of a waveform ofa signal for operating the circuit 904.

FIG. 28B illustrates a transistor 911. A signal supplied to a gate ofthe transistor 911 is generated on the basis of, for example, thevoltage V_(POG) and the voltage V_(SS). The signal is generated on thebasis of the voltage V_(POG) at the time when the transistor 911 isturned on and on the basis of the voltage V_(SS) at the time when thetransistor 911 is turned off. As shown in FIG. 28C, the voltage V_(POG)is higher than the voltage V_(ORG). Therefore, a conducting statebetween a source (S) and a drain (D) of the transistor 911 can beobtained more surely. As a result, the frequency of malfunction of thecircuit 904 can be reduced.

FIG. 28D illustrates an example of the circuit 906 that operates withthe voltage V_(NEG) and FIG. 28E illustrates an example of a waveform ofa signal for operating the circuit 906.

FIG. 28D illustrates a transistor 912 having a back gate. A signalsupplied to a gate of the transistor 912 is generated on the basis of,for example, the voltage V_(ORG) and the voltage V_(SS). The signal isgenerated on the basis of the voltage V_(ORG) at the time when thetransistor 912 is turned on and on the basis of the voltage V_(SS) atthe time when the transistor 912 is turned off. A signal supplied to theback gate of the transistor 912 is generated on the basis of the voltageV_(NEG). As shown in FIG. 28E, the voltage V_(NEG) is lower than thevoltage V_(SS) (GND). Therefore, the threshold voltage of the transistor912 can be controlled so as to be shifted in the positive direction.Thus, the transistor 912 can be surely turned off and a current flowingbetween a source (S) and a drain (D) can be reduced. As a result, thefrequency of malfunction of the circuit 906 can be reduced and powerconsumption thereof can be reduced.

The voltage V_(NEG) may be directly supplied to the back gate of thetransistor 912. Alternatively, a signal supplied to the gate of thetransistor 912 may be generated on the basis of the voltage V_(ORG) andthe voltage V_(NEG) and the generated signal may be supplied to the backgate of the transistor 912.

FIGS. 29A and 29B illustrate a modification example of FIGS. 28D and28E.

In a circuit diagram illustrated in FIG. 29A, a transistor 922 whoseconduction state can be controlled by a control circuit 921 is providedbetween the voltage generation circuit 905 and the circuit 906. Thetransistor 922 is an n-channel OS transistor. The control signal S_(BG)output from the control circuit 921 is a signal for controlling theconduction state of the transistor 922. Transistors 912A and 912Bincluded in the circuit 906 are the same OS transistors as thetransistor 922.

A timing chart in FIG. 29B shows changes in the potential of the controlsignal S_(BG) and the potential of a node N_(BG). The potential of thenode N_(BG) indicates the states of potentials of back gates of thetransistors 912A and 912B. When the control signal S_(BG) is at a highlevel, the transistor 922 is turned on and the voltage of the nodeN_(BG) becomes the voltage V_(NEG). Then, when the control signal S_(BG)is at a low level, the node N_(BG) is brought into an electricallyfloating state. Since the transistor 922 is an OS transistor, itsoff-state current is small. Accordingly, even when the node N_(BG) is inan electrically floating state, the voltage V_(NEG) which has beensupplied can be held.

FIG. 30A illustrates an example of a circuit configuration applicable tothe above-described voltage generation circuit 903. The voltagegeneration circuit 903 illustrated in FIG. 30A is a five-stage chargepump including diodes D1 to D5, capacitors C1 to C5, and an inverterINV. A clock signal CLK is supplied to the capacitors C1 to C5 directlyor through the inverter INV. When a power supply voltage of the inverterINV is a voltage applied on the basis of the voltage V_(ORG) and thevoltage V_(SS), in response to the application of the clock signal CLK,the voltage V_(POG) can be obtained by increasing the voltage V_(ORG) bya voltage five times a potential difference between the voltage V_(ORG)and the voltage V_(SS). Note that a forward voltage of the diodes D1 toD5 is 0 V. A desired voltage V_(POG) can be obtained when the number ofstages of the charge pump is changed.

FIG. 30B illustrates an example of a circuit configuration applicable tothe above-described voltage generation circuit 905. The voltagegeneration circuit 905 illustrated in FIG. 30B is a four-stage chargepump including the diodes D1 to D5, the capacitors C1 to C5, and theinverter INV. The clock signal CLK is supplied to the capacitors C1 toC5 directly or through the inverter INV. When a power supply voltage ofthe inverter INV is a voltage applied on the basis of the voltageV_(ORG) and the voltage V_(SS), in response to the application of theclock signal CLK, the voltage V_(NEG) can be obtained by decreasing theground voltage, i.e., the voltage V_(SS) by a voltage four times thepotential difference between the voltage V_(ORG) and the voltage V_(SS).Note that a forward voltage of the diodes D1 to D5 is 0 V. A desiredvoltage V_(NEG) can be obtained when the number of stages of the chargepump is changed.

The circuit configuration of the voltage generation circuit 903 is notlimited to the configuration of the circuit diagram illustrated in FIG.30A. Modification examples of the voltage generation circuit 903 areshown in FIGS. 31A to 31C. Note that further modification examples ofthe voltage generation circuit 903 can be realized by changing voltagessupplied to wirings or arrangement of elements in voltage generationcircuits 903A to 903C illustrated in FIGS. 31A to 31C.

The voltage generation circuit 903A illustrated in FIG. 31A includestransistors M1 to M10, capacitors C11 to C14, and an inverter INV1. Theclock signal CLK is supplied to gates of the transistors M1 to M10directly or through the inverter INV1. In response to the application ofthe clock signal CLK, the voltage V_(POG) can be obtained by increasingthe voltage V_(ORG) by a voltage four times the potential differencebetween the voltage V_(ORG) and the voltage V_(SS). A desired voltageV_(POG) can be obtained when the number of stages is changed. In thevoltage generation circuit 903A in FIG. 31A, off-state current of eachof the transistors M1 to M10 can be low when the transistors M1 to M10are OS transistors, and leakage of charge held in the capacitors C11 toC14 can be suppressed. Accordingly, raising from the voltage V_(ORG) tothe voltage V_(POG) can be efficiently performed.

The voltage generation circuit 903B illustrated in FIG. 31B includestransistors M11 to M14, capacitors C15 and C16, and an inverter INV2.The clock signal CLK is supplied to gates of the transistors M11 to M14directly or through the inverter INV2. In response to the application ofthe clock signal CLK, the voltage V_(POG) can be obtained by increasingthe voltage V_(ORG) by a voltage twice the potential difference betweenthe voltage V_(ORG) and the voltage V_(SS). In the voltage generationcircuit 903B in FIG. 31B, off-state current of each of the transistorsM11 to M14 can be low when the transistors M11 to M14 are OStransistors, and leakage of charge held in the capacitors C15 and C16can be suppressed. Accordingly, raising from the voltage V_(ORG) to thevoltage V_(POG) can be efficiently performed.

The voltage generation circuit 903C in FIG. 31C includes an inductorInd1, a transistor M15, a diode D6, and a capacitor C17. The conductionstate of the transistor M15 is controlled by a control signal EN. Owingto the control signal EN, the voltage V_(POG) which is obtained byincreasing the voltage V_(ORG) can be obtained. Since the voltagegeneration circuit 903C in FIG. 31C increases the voltage using theinductor Ind1, the voltage can be increased efficiently.

As described above, in any of the structures of this embodiment, avoltage required for circuits included in a semiconductor device can beinternally generated. Thus, in the semiconductor device, the kinds ofpower supply voltages supplied from the outside can be reduced.

Note that the structures and the like described in this embodiment canbe combined as appropriate with any of the structures described in theother embodiments.

Embodiment 10

In this embodiment, a display module and electronic devices, each ofwhich includes a semiconductor device of one embodiment of the presentinvention, will be described with reference to FIG. 32, FIGS. 33A to33E, FIGS. 34A to 34G, and FIGS. 35A and 35B.

<7-1. Display Module>

In a display module 7000 illustrated in FIG. 32, a touch panel 7004connected to an FPC 7003, a display panel 7006 connected to an FPC 7005,a backlight 7007, a frame 7009, a printed board 7010, and a battery 7011are provided between an upper cover 7001 and a lower cover 7002.

The semiconductor device of one embodiment of the present invention canbe used for the display panel 7006, for example.

The shapes and sizes of the upper cover 7001 and the lower cover 7002can be changed as appropriate in accordance with the sizes of the touchpanel 7004 and the display panel 7006.

The touch panel 7004 can be a resistive touch panel or a capacitivetouch panel and overlap with the display panel 7006. Alternatively, acounter substrate (sealing substrate) of the display panel 7006 can havea touch panel function. Alternatively, a photosensor may be provided ineach pixel of the display panel 7006 to form an optical touch panel.

The backlight 7007 includes a light source 7008. One embodiment of thepresent invention is not limited to the structure in FIG. 32, in whichthe light source 7008 is provided over the backlight 7007. For example,a structure in which the light source 7008 is provided at an end portionof the backlight 7007 and a light diffusion plate is further providedmay be employed. Note that the backlight 7007 need not be provided inthe case where a self-luminous light-emitting element such as an organicEL element is used or in the case where a reflective panel or the likeis employed.

The frame 7009 protects the display panel 7006 and functions as anelectromagnetic shield for blocking electromagnetic waves generated bythe operation of the printed board 7010. The frame 7009 may alsofunction as a radiator plate.

The printed board 7010 includes a power supply circuit and a signalprocessing circuit for outputting a video signal and a clock signal. Asa power source for supplying power to the power supply circuit, anexternal commercial power source or the separate battery 7011 may beused. The battery 7011 can be omitted in the case where a commercialpower source is used.

The display module 7000 may be additionally provided with a member suchas a polarizing plate, a retardation plate, or a prism sheet.

<7-2. Electronic Device 1>

Next, FIGS. 33A to 33E illustrate examples of electronic devices.

FIG. 33A is an external view of a camera 8000 to which a finder 8100 isattached.

The camera 8000 includes a housing 8001, a display portion 8002, anoperation button 8003, a shutter button 8004, and the like. Furthermore,an attachable lens 8006 is attached to the camera 8000.

Although the lens 8006 of the camera 8000 here is detachable from thehousing 8001 for replacement, the lens 8006 may be included in thehousing 8001.

Images can be taken with the camera 8000 at the press of the shutterbutton 8004. In addition, images can be taken at the touch of thedisplay portion 8002 that serves as a touch panel.

The housing 8001 of the camera 8000 includes a mount including anelectrode, so that the finder 8100, a stroboscope, or the like can beconnected to the housing 8001.

The finder 8100 includes a housing 8101, a display portion 8102, abutton 8103, and the like.

The housing 8101 includes a mount for engagement with the mount of thecamera 8000 so that the finder 8100 can be connected to the camera 8000.The mount includes an electrode, and an image or the like received fromthe camera 8000 through the electrode can be displayed on the displayportion 8102.

The button 8103 serves as a power button. The on/off state of thedisplay portion 8102 can be turned on and off with the button 8103.

A display device of one embodiment of the present invention can be usedin the display portion 8002 of the camera 8000 and the display portion8102 of the finder 8100.

Although the camera 8000 and the finder 8100 are separate and detachableelectronic devices in FIG. 33A, the housing 8001 of the camera 8000 mayinclude a finder having a display device.

FIG. 33B is an external view of a head-mounted display 8200.

The head-mounted display 8200 includes a mounting portion 8201, a lens8202, a main body 8203, a display portion 8204, a cable 8205, and thelike. The mounting portion 8201 includes a battery 8206.

Power is supplied from the battery 8206 to the main body 8203 throughthe cable 8205. The main body 8203 includes a wireless receiver or thelike to receive video data, such as image data, and display it on thedisplay portion 8204. The movement of the eyeball and the eyelid of auser is captured by a camera in the main body 8203 and then coordinatesof the points the user looks at are calculated using the captured datato utilize the eye of the user as an input means.

The mounting portion 8201 may include a plurality of electrodes so as tobe in contact with the user. The main body 8203 may be configured tosense current flowing through the electrodes with the movement of theuser's eyeball to recognize the direction of his or her eyes. The mainbody 8203 may be configured to sense current flowing through theelectrodes to monitor the user's pulse. The mounting portion 8201 mayinclude sensors, such as a temperature sensor, a pressure sensor, or anacceleration sensor so that the user's biological information can bedisplayed on the display portion 8204. The main body 8203 may beconfigured to sense the movement of the user's head or the like to movean image displayed on the display portion 8204 in synchronization withthe movement of the user's head or the like.

The display device of one embodiment of the present invention can beused in the display portion 8204.

FIGS. 33C to 33E are external views of a head-mounted display 8300. Thehead-mounted display 8300 includes a housing 8301, a display portion8302, a fixing band 8304, and a pair of lenses 8305.

A user can see display on the display portion 8302 through the lenses8305. It is favorable that the display portion 8302 be curved. When thedisplay portion 8302 is curved, a user can feel high realistic sensationof images. Although the structure described in this embodiment as anexample has one display portion 8302, the number of display portions8302 provided is not limited to one. For example, two display portions8302 may be provided, in which case one display portion is provided forone corresponding user's eye, so that three-dimensional display usingparallax or the like is possible.

The display device of one embodiment of the present invention can beused in the display portion 8302. The display device including thesemiconductor device of one embodiment of the present invention has anextremely high resolution; thus, even when an image is magnified usingthe lenses 8305 as illustrated in FIG. 33E, the user does not perceivepixels, and thus a more realistic image can be displayed.

<7-3. Electronic Device 2>

Next, FIGS. 34A to 34G illustrate examples of electronic devices thatare different from those illustrated in FIGS. 33A to 33E.

Electronic devices illustrated in FIGS. 34A to 34G include a housing9000, a display portion 9001, a speaker 9003, an operation key 9005(including a power switch or an operation switch), a connection terminal9006, a sensor 9007 (a sensor having a function of measuring force,displacement, position, speed, acceleration, angular velocity,rotational frequency, distance, light, liquid, magnetism, temperature,chemical substance, sound, time, hardness, electric field, current,voltage, electric power, radiation, flow rate, humidity, gradient,oscillation, odor, or infrared ray), a microphone 9008, and the like.

The electronic devices in FIGS. 34A to 34G have a variety of functionssuch as a function of displaying a variety of information (e.g., a stillimage, a moving image, and a text image) on the display portion, a touchpanel function, a function of displaying a calendar, date, time, and thelike, a function of controlling processing with a variety of software(programs), a wireless communication function, a function of beingconnected to a variety of computer networks with a wirelesscommunication function, a function of transmitting and receiving avariety of data with a wireless communication function, and a functionof reading out a program or data stored in a recording medium anddisplaying it on the display portion. Note that functions of theelectronic devices in FIGS. 34A to 34G are not limited thereto, and theelectronic devices can have a variety of functions. Although notillustrated in FIGS. 34A to 34G, the electronic devices may each have aplurality of display portions. Furthermore, the electronic devices mayeach be provided with a camera and the like to have a function of takinga still image, a function of taking a moving image, a function ofstoring the taken image in a memory medium (an external memory medium ora memory medium incorporated in the camera), a function of displayingthe taken image on the display portion, or the like.

The electronic devices in FIGS. 34A to 34G will be described in detailbelow.

FIG. 34A is a perspective view illustrating a television device 9100.The television device 9100 can include the display portion 9001 having alarge screen size of, for example, 50 inches or more, or 100 inches ormore.

FIG. 34B is a perspective view of a portable information terminal 9101.The portable information terminal 9101 functions as, for example, one ormore of a telephone set, a notebook, and an information browsing system.Specifically, the portable information terminal 9101 can be used as asmartphone. Note that the portable information terminal 9101 may includethe speaker 9003, the connection terminal 9006, the sensor 9007, or thelike. The portable information terminal 9101 can display text and imageinformation on its plurality of surfaces. For example, three operationbuttons 9050 (also referred to as operation icons or simply as icons)can be displayed on one surface of the display portion 9001.Furthermore, information 9051 indicated by dashed rectangles can bedisplayed on another surface of the display portion 9001. Examples ofthe information 9051 include display indicating reception of an e-mail,a social networking service (SNS) message, or a telephone call, thetitle and sender of an e-mail or an SNS message, date, time, remainingbattery, and reception strength of an antenna. Alternatively, theoperation buttons 9050 or the like may be displayed in place of theinformation 9051.

FIG. 34C is a perspective view of a portable information terminal 9102.The portable information terminal 9102 has a function of displayinginformation on three or more surfaces of the display portion 9001. Here,information 9052, information 9053, and information 9054 are displayedon different surfaces. For example, a user of the portable informationterminal 9102 can see the display (here, the information 9053) on theportable information terminal 9102 put in a breast pocket of his/herclothes. Specifically, a caller's phone number, name, or the like of anincoming call is displayed in a position that can be seen from above theportable information terminal 9102. The user can see the display withouttaking out the portable information terminal 9102 from the pocket anddecide whether to answer the call.

FIG. 34D is a perspective view of a watch-type portable informationterminal 9200. The portable information terminal 9200 is capable ofexecuting a variety of applications such as mobile phone calls,e-mailing, reading and editing texts, music reproduction, Internetcommunication, and a computer game. The display surface of the displayportion 9001 is curved, and display can be performed on the curveddisplay surface. The portable information terminal 9200 can employ nearfield communication conformable to a communication standard. Forexample, hands-free calling can be achieved by mutual communicationbetween the portable information terminal 9200 and a headset capable ofwireless communication. Moreover, the portable information terminal 9200includes the connection terminal 9006 and can perform direct datacommunication with another information terminal via a connector.Charging through the connection terminal 9006 is also possible. Notethat the charging operation may be performed by wireless power feedingwithout using the connection terminal 9006.

FIGS. 34E, 34F, and 34G are perspective views of a foldable portableinformation terminal 9201 that is opened, that is shifted from theopened state to the folded state or from the folded state to the openedstate, and that is folded, respectively. The portable informationterminal 9201 is highly portable when folded. When the portableinformation terminal 9201 is opened, a seamless large display region ishighly browsable. The display portion 9001 of the portable informationterminal 9201 is supported by three housings 9000 joined by hinges 9055.By being folded at the hinges 9055 between the two adjacent housings9000, the portable information terminal 9201 can be reversibly changedin shape from the opened state to the folded state. For example, theportable information terminal 9201 can be bent with a radius ofcurvature greater than or equal to 1 mm and less than or equal to 150mm.

Next, an example of an electronic device that is different from theelectronic devices illustrated in FIGS. 33A to 33E and FIGS. 34A to 34Gis illustrated in FIGS. 35A and 35B. FIGS. 35A and 35B are perspectiveviews of a display device including a plurality of display panels. Theplurality of display panels are wound in the perspective view in FIG.35A and are unwound in the perspective view in FIG. 35B.

A display device 9500 illustrated in FIGS. 35A and 35B includes aplurality of display panels 9501, a hinge 9511, and a bearing 9512. Theplurality of display panels 9501 each include a display region 9502 anda light-transmitting region 9503.

Each of the plurality of display panels 9501 is flexible. Two adjacentdisplay panels 9501 are provided so as to partly overlap with eachother. For example, the light-transmitting regions 9503 of the twoadjacent display panels 9501 can overlap with each other. A displaydevice having a large screen can be obtained with the plurality ofdisplay panels 9501. The display device is highly versatile because thedisplay panels 9501 can be wound depending on its use.

Although the display regions 9502 of the adjacent display panels 9501are separated from each other in FIGS. 35A and 35B, without limitationto this structure, the display regions 9502 of the adjacent displaypanels 9501 may overlap with each other without any space so that acontinuous display region 9502 is obtained, for example.

Electronic devices described in this embodiment are characterized byhaving a display portion for displaying some sort of information. Notethat the semiconductor device of one embodiment of the present inventioncan also be used for an electronic device that does not have a displayportion.

Note that the structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

Embodiment 11 <Semiconductor Circuit>

The transistors disclosed in this specification and the like can be usedin a variety of semiconductor circuits, e.g., logic circuits such as anOR circuit, an AND circuit, a NAND circuit, and a NOR circuit, aninverter circuit, a buffer circuit, a shift register circuit, aflip-flop circuit, an encoder circuit, a decoder circuit, an amplifiercircuit, an analog switch circuit, an integrator circuit, adifferentiation circuit, a memory element, and the like.

Examples of a semiconductor circuit including the transistor disclosedin this specification and the like are illustrated in circuit diagramsin FIGS. 46A to 46C. In the circuit diagrams, “OS” is given beside thecircuit symbol of a transistor including an oxide semiconductor, inorder to clearly demonstrate that the transistor includes an oxidesemiconductor.

The semiconductor circuit illustrated in FIG. 46A has a configuration ofan inverter circuit in which the p-channel transistor 281 and then-channel transistor 282 are connected to each other in series and inwhich gates of the transistors are connected to each other.

The semiconductor circuit illustrated in FIG. 46B has a configuration ofan analog switch circuit in which the p-channel transistor 281 and then-channel transistor 282 are connected to each other in parallel.

The semiconductor circuit illustrated in FIG. 46C has a configuration ofa NAND circuit including a transistor 281 a, a transistor 281 b, atransistor 282 a, and a transistor 282 b. A potential output from theNAND circuit changes depending on the combination of potentials input toan input terminal IN_A and an input terminal IN_B.

<Memory Device>

The semiconductor circuit illustrated in FIG. 47A has a configuration ofa memory device in which one of a source and a drain of a transistor 289is connected to a gate of a transistor 1281 and one electrode of acapacitor 257. The circuit illustrated in FIG. 47B has a configurationof a memory device in which one of the source and the drain of thetransistor 289 is connected to one electrode of the capacitor 257.

In each of the semiconductor circuits illustrated in FIGS. 47A and 47B,charges injected from the other of the source and the drain of thetransistor 289 can be stored at a node 256. The transistor 289 is atransistor including an oxide semiconductor, which enables charges to bestored at the node 256 for a long period.

Although the transistor 1281 is a p-channel transistor in FIG. 47A, thetransistor 1281 may be an n-channel transistor. For example, thetransistor 281 or the transistor 282 may be used as the transistor 1281.An OS transistor may also be used as the transistor 1281.

The semiconductor devices (memory devices) illustrated in FIGS. 47A and47B are described in detail here.

The semiconductor device illustrated in FIG. 47A includes the transistor1281 using a first semiconductor, the transistor 289 using a secondsemiconductor, and the capacitor 257.

The transistor 289 is one of the OS transistors which are disclosed inthe above embodiment. Since the off-state current of the transistor 289is low, stored data can be retained for a long period at a predeterminednode of the semiconductor device. In other words, power consumption ofthe memory device can be reduced because refresh operation becomesunnecessary or the frequency of refresh operation can be extremely low.

In FIG. 47A, a wiring 251 is electrically connected to one of a sourceand a drain of the transistor 1281, and a wiring 252 is electricallyconnected to the other of the source and the drain of the transistor1281. A wiring 253 is electrically connected to one of the source andthe drain of the transistor 289. A wiring 254 is electrically connectedto a gate of the transistor 289. The gate of the transistor 1281, theother of the source and the drain of the transistor 289, and the oneelectrode of the capacitor 257 are electrically connected to the node256. A wiring 255 is electrically connected to the other electrode ofthe capacitor 257.

The memory device in FIG. 47A has a feature that the charges supplied tothe node 256 can be retained, and thus enables writing, retaining, andreading of data as follows.

[Writing and Retaining Operations]

Writing and retaining of data are described. First, the potential of thewiring 254 is set to a potential at which the transistor 289 is on.Accordingly, the potential of the wiring 253 is supplied to the node256. That is, a predetermined charge is supplied to the node 256(writing). Here, one of two kinds of charges providing differentpotential levels (hereinafter referred to as a “low-level charge” and a“high-level charge”) is supplied. After that, the potential of thewiring 254 is set to a potential at which the transistor 289 is off.Thus, the charge is retained at the node 256.

Note that the high-level charge is a charge for supplying a higherpotential to the node 256 than the low-level charge. In the case wherethe transistor 1281 is a p-channel transistor, each of the high-leveland low-level charges is a charge for supplying a potential higher thanthe threshold voltage of the transistor 1281. In the case where thetransistor 1281 is an n-channel transistor, each of the high-level andlow-level charges is a charge for supplying a potential lower than thethreshold voltage of the transistor 1281. In other words, each of thehigh-level and low-level charges is a charge for supplying a potentialat which the transistor 1281 is off

Since the off-state current of the transistor 289 is extremely low, thecharge of the node 256 is retained for a long time.

[Reading Operation]

Next, reading of data is described. A reading potential V_(R) issupplied to the wiring 255 while a predetermined potential (a constantpotential) different from the potential of the wiring 252 is supplied tothe wiring 251, whereby data retained at the node 256 can be read.

The reading potential V_(R) is set to {(V_(th)−V_(H))+(V_(tn)+V_(L)}/)2,where V_(H) is the potential supplied in the case of the high-levelcharge and V_(L) is the potential supplied in the case of the low-levelcharge. Note that the potential of the wiring 255 in a period duringwhich data is not read is set to a potential higher than V_(H) in thecase where the transistor 1281 is a p-channel transistor, and is set toa potential lower than V_(L) in the case where the transistor 1281 is anre-channel transistor.

For example, in the case where the transistor 1281 is a p-channeltransistor, V_(R) is −2 V when V_(th) of the transistor 1281 is −2 V,V_(H) is 1 V, and V_(L) is −1 V. When the potential written to the node256 is V_(H) and V_(R) is applied to the wiring 255, V_(R)+V_(H), i.e.,−1 V, is applied to the gate of the transistor 1281. Since −1 V ishigher than V_(th), the transistor 1281 is not turned on. Thus, thepotential of the wiring 252 is not changed. When the potential writtento the node 256 is V_(L) and V_(R) is applied to the wiring 255,V_(R)+V_(L), i.e., −3 V, is applied to the gate of the transistor 1281.Since −3 V is lower than V_(th), the transistor 1281 is turned on. Thus,the potential of the wiring 252 is changed.

In the case where the transistor 1281 is an n-channel transistor, V_(R)is 2 V when V_(th) of the transistor 1281 is 2 V, V_(H) is 1 V, andV_(L) is −1 V. When the potential written to the node 256 is V_(H) andV_(R) is applied to the wiring 255, V_(R)+V_(H), i.e., 3 V, is appliedto the gate of the transistor 1281. Since 3 V is higher than V_(th), thetransistor 1281 is turned on. Thus, the potential of the wiring 252 ischanged. When the potential written to the node 256 is V_(L) and V_(R)is applied to the wiring 255, V_(R)+V_(L), i.e., 1 V, is applied to thegate of the transistor 1281. Since 1 V is lower than V_(th), thetransistor 1281 is not turned on. Thus, the potential of the wiring 252is not changed.

By determining the potential of the wiring 252, data retained at thenode 256 can be read.

The semiconductor device in FIG. 47B is different from the semiconductordevice in FIG. 47A in that the transistor 1281 is not provided. Also inthis case, data can be written and retained in a manner similar to thatof the semiconductor device in FIG. 47A.

Reading of data in the semiconductor device in FIG. 47B is described.When a potential at which the transistor 289 is turned on is supplied tothe wiring 254, the wiring 253 which is in a floating state and thecapacitor 257 are brought into conduction, and the charge isredistributed between the wiring 253 and the capacitor 257. As a result,the potential of the wiring 253 is changed. The amount of change in thepotential of the wiring 253 varies depending on the potential of thenode 256 (or the charge accumulated in the node 256).

For example, the potential of the wiring 253 after the chargeredistribution is (C_(B)×V_(B0)+C×V)/(C_(B)+C), where V is the potentialof the node 256, C is the capacitance of the capacitor 257, C_(B) is thecapacitance component of the wiring 253, and V_(B0) is the potential ofthe wiring 253 before the charge redistribution. Thus, it can be foundthat, assuming that the memory cell is in either of two states in whichthe potential of the node 256 is V₁ and V₀ (V₁>V₀), the potential of thewiring 253 in the case of retaining the potential V₁(=(C_(B)×V_(B0)+C×V₁)/(C_(B)+C)) is higher than the potential of thewiring 253 in the case of retaining the potential V₀(=(C_(B)×V_(B0)+C×V₀)/(C_(B)+C)).

Then, by comparing the potential of the wiring 253 with a predeterminedpotential, data can be read.

When including a transistor using an oxide semiconductor and having anextremely low off-state current, the memory device described above canretain stored data for a long time. In other words, power consumption ofthe semiconductor device can be reduced because refresh operationbecomes unnecessary or the frequency of refresh operation can beextremely low. Moreover, stored data can be retained for a long timeeven when power is not supplied (note that a potential is preferablyfixed).

In the memory device, high voltage is not needed for writing data anddeterioration of elements is less likely to occur. Unlike in aconventional nonvolatile memory, for example, it is not necessary toinject and extract electrons into and from a floating gate; thus, aproblem such as deterioration of an insulator is not caused. That is,the memory device of one embodiment of the present invention does nothave a limit on the number of times data can be rewritten, which is aproblem of a conventional nonvolatile memory, and the reliabilitythereof is drastically improved. Furthermore, data is written dependingon the on/off state of the transistor, whereby high-speed operation canbe achieved.

<CPU>

Next, an example of a CPU including any of the above-describedtransistors will be described. FIG. 48 is a block diagram illustrating astructure example of a CPU including any of the above-describedtransistors as a component.

The CPU illustrated in FIG. 48 includes, over a substrate 1190, anarithmetic logic unit (ALU) 1191, an ALU controller 1192, an instructiondecoder 1193, an interrupt controller 1194, a timing controller 1195, aregister 1196, a register controller 1197, a bus interface (Bus I/F)1198, a rewritable ROM 1199, and a ROM interface (ROM I/F) 1189. Asemiconductor substrate, an SOI substrate, a glass substrate, or thelike is used as the substrate 1190. The ROM 1199 and the ROM interface1189 may be provided over a separate chip. Needless to say, the CPU inFIG. 48 is only an example in which the structure is simplified, and anactual CPU may have a variety of configurations depending on theapplication. For example, the CPU may have the following configuration:a structure including the CPU illustrated in FIG. 48 or an arithmeticcircuit is considered as one core; a plurality of the cores areincluded; and the cores operate in parallel. The number of bits that theCPU can process in an internal arithmetic circuit or in a data bus canbe 8, 16, 32, or 64, for example.

An instruction that is input to the CPU through the bus interface 1198is input to the instruction decoder 1193 and decoded therein, and then,input to the ALU controller 1192, the interrupt controller 1194, theregister controller 1197, and the timing controller 1195.

The ALU controller 1192, the interrupt controller 1194, the registercontroller 1197, and the timing controller 1195 conduct various controlsin accordance with the decoded instruction. Specifically, the ALUcontroller 1192 generates signals for controlling the operation of theALU 1191. While the CPU is executing a program, the interrupt controller1194 processes an interrupt request from an external input/output deviceor a peripheral circuit on the basis of its priority or a mask state.The register controller 1197 generates an address of the register 1196,and reads/writes data from/to the register 1196 in accordance with thestate of the CPU.

The timing controller 1195 generates signals for controlling operationtimings of the ALU 1191, the ALU controller 1192, the instructiondecoder 1193, the interrupt controller 1194, and the register controller1197. For example, the timing controller 1195 includes an internal clockgenerator for generating an internal clock signal based on a referenceclock signal, and supplies the internal clock signal to the abovecircuits.

In the CPU illustrated in FIG. 48, a memory cell is provided in theregister 1196. For the memory cell of the register 1196, any of theabove-described transistors, the above-described memory device, or thelike can be used.

In the CPU illustrated in FIG. 48, the register controller 1197 selectsoperation of retaining data in the register 1196 in accordance with aninstruction from the ALU 1191. That is, the register controller 1197selects whether data is retained by a flip-flop or by a capacitor in thememory cell included in the register 1196. When data retaining by theflip-flop is selected, a power supply voltage is supplied to a memoryelement in the register 1196. When data retaining by the capacitor isselected, the data is rewritten in the capacitor, and supply of powersupply voltage to the memory cell in the register 1196 can be stopped.

FIG. 49 is an example of a circuit diagram of a memory element that canbe used as the register 1196. A memory element 1730 includes a circuit1701 in which stored data is volatile when power supply is stopped, acircuit 1702 in which stored data is nonvolatile even when power supplyis stopped, a switch 1703, a switch 1704, a logic element 1706, acapacitor 1707, and a circuit 1720 having a selecting function. Thecircuit 1702 includes a capacitor 1708, a transistor 1709, and atransistor 1710. Note that the memory element 1730 may further includeanother element such as a diode, a resistor, or an inductor, as needed.

Here, the above-described memory device can be used as the circuit 1702.When supply of a power supply voltage to the memory element 1730 isstopped, a ground potential (0 V) or a potential at which the transistor1709 in the circuit 1702 is turned off continues to be input to a gateof the transistor 1709. For example, the gate of the transistor 1709 isgrounded through a load such as a resistor.

Described here is an example in which the switch 1703 is a transistor1713 having one conductivity type (e.g., an n-channel transistor) andthe switch 1704 is a transistor 1714 having a conductivity type oppositeto the one conductivity type (e.g., a p-channel transistor). A firstterminal of the switch 1703 corresponds to one of a source and a drainof the transistor 1713, a second terminal of the switch 1703 correspondsto the other of the source and the drain of the transistor 1713, andconduction or non-conduction between the first terminal and the secondterminal of the switch 1703 (i.e., the on/off state of the transistor1713) is selected by a control signal RD input to a gate of thetransistor 1713. A first terminal of the switch 1704 corresponds to oneof a source and a drain of the transistor 1714, a second terminal of theswitch 1704 corresponds to the other of the source and the drain of thetransistor 1714, and conduction or non-conduction between the firstterminal and the second terminal of the switch 1704 (i.e., the on/offstate of the transistor 1714) is selected by the control signal RD inputto a gate of the transistor 1714.

One of a source and a drain of the transistor 1709 is electricallyconnected to one of a pair of electrodes of the capacitor 1708 and agate of the transistor 1710. Here, the connection portion is referred toas a node M2. One of a source and a drain of the transistor 1710 iselectrically connected to a wiring which can supply a low power supplypotential (e.g., a GND line), and the other thereof is electricallyconnected to the first terminal of the switch 1703 (the one of thesource and the drain of the transistor 1713). The second terminal of theswitch 1703 (the other of the source and the drain of the transistor1713) is electrically connected to the first terminal of the switch 1704(the one of the source and the drain of the transistor 1714). The secondterminal of the switch 1704 (the other of the source and the drain ofthe transistor 1714) is electrically connected to a wiring which cansupply a power supply potential VDD. The second terminal of the switch1703 (the other of the source and the drain of the transistor 1713), thefirst terminal of the switch 1704 (the one of the source and the drainof the transistor 1714), an input terminal of the logic element 1706,and one of a pair of electrodes of the capacitor 1707 are electricallyconnected to each other. Here, the connection portion is referred to asa node M1. The other of the pair of electrodes of the capacitor 1707 canbe supplied with a constant potential. For example, the other of thepair of electrodes of the capacitor 1707 can be supplied with a lowpower supply potential (e.g., GND) or a high power supply potential(e.g., VDD). The other of the pair of electrodes of the capacitor 1707is electrically connected to the wiring which can supply a low powersupply potential (e.g., a GND line). The other of the pair of electrodesof the capacitor 1708 can be supplied with a constant potential. Forexample, the other of the pair of electrodes of the capacitor 1708 canbe supplied with a low power supply potential (e.g., GND) or a highpower supply potential (e.g., VDD). The other of the pair of electrodesof the capacitor 1708 is electrically connected to the wiring which cansupply a low power supply potential (e.g., a GND line).

The capacitor 1707 and the capacitor 1708 are not necessarily providedas long as the parasitic capacitance of the transistor, the wiring, orthe like is actively utilized.

A control signal WE is input to the gate electrode of the transistor1709. As for each of the switch 1703 and the switch 1704, a conductionstate or a non-conduction state between the first terminal and thesecond terminal is selected by the control signal RD which is differentfrom the control signal WE. When the first terminal and the secondterminal of one of the switches are in the conduction state, the firstterminal and the second terminal of the other of the switches are in thenon-conduction state.

A signal corresponding to data retained in the circuit 1701 is input tothe other of the source and the drain of the transistor 1709. FIG. 49illustrates an example in which a signal output from the circuit 1701 isinput to the other of the source and the drain of the transistor 1709.The logic value of a signal output from the second terminal of theswitch 1703 (the other of the source and the drain of the transistor1713) is inverted by the logic element 1706, and the inverted signal isinput to the circuit 1701 through the circuit 1720.

In the example of FIG. 49, a signal output from the second terminal ofthe switch 1703 (the other of the source and the drain of the transistor1713) is input to the circuit 1701 through the logic element 1706 andthe circuit 1720; however, one embodiment of the present invention isnot limited thereto. The signal output from the second terminal of theswitch 1703 (the other of the source and the drain of the transistor1713) may be input to the circuit 1701 without its logic value beinginverted. For example, in the case where the circuit 1701 includes anode in which a signal obtained by inversion of the logic value of asignal input from the input terminal is retained, the signal output fromthe second terminal of the switch 1703 (the other of the source and thedrain of the transistor 1713) can be input to the node.

As the transistor 1709 in FIG. 49, the transistor 100 described in theabove embodiment can be used. The control signal WE can be input to thegate electrode and a control signal WE2 can be input to the back gateelectrode. The control signal WE2 is a signal having a constantpotential. As the constant potential, for example, a ground potential ora potential lower than a source potential of the transistor 1709 isselected. The control signal WE2 is a potential signal for controllingthe threshold voltage of the transistor 1709, and a drain current of thetransistor 1709 at a gate voltage of 0 V can be further reduced. Notethat as the transistor 1709, a transistor without a second gate may beused.

In FIG. 49, the transistors included in the memory element 1730 exceptfor the transistor 1709 can each be a transistor in which a channel isformed in a layer formed using a semiconductor other than an oxidesemiconductor or in the substrate 1190. For example, the transistor canbe a transistor whose channel is formed in a silicon layer or a siliconsubstrate. Alternatively, all the transistors in the memory element 1730may be transistors in which a channel is formed in an oxidesemiconductor layer. Further alternatively, in the memory element 1730,a transistor in which a channel is formed in an oxide semiconductorlayer and a transistor in which a channel is formed in a layer formedusing a semiconductor other than an oxide semiconductor or in thesubstrate 1190 can be used in combination as the transistors other thanthe transistor 1709.

As the circuit 1701 in FIG. 49, for example, a flip-flop circuit can beused. As the logic element 1706, for example, an inverter or a clockedinverter can be used.

In a period during which the memory element 1730 is not supplied withthe power supply voltage, the semiconductor device of one embodiment ofthe present invention can retain data stored in the circuit 1701 at thenode M2 by the capacitor 1708 which is provided in the circuit 1702.

As described above, the off-state current of an OS transistor isextremely low. For example, the off-state current of an OS transistor issignificantly lower than that of a transistor in which a channel isformed in silicon having crystallinity. Thus, when the transistor isused as the transistor 1709, a signal retained by the capacitor 1708 isretained for a long time also in a period during which the power supplyvoltage is not supplied to the memory element 1730. The memory element1730 can accordingly retain the stored content (data) also in a periodduring which the supply of the power supply voltage is stopped.

Since the switch 1703 and the switch 1704 are provided, the timerequired for the circuit 1701 to retain original data again after thesupply of the power supply voltage is restarted can be shortened.

In the circuit 1702, a signal retained at the node M2 is input to thegate of the transistor 1710. Therefore, after supply of the power supplyvoltage to the memory element 1730 is restarted, the state (the on stateor the off state) of the transistor 1710 is determined in accordancewith the signal retained at the node M2 and can be read from the circuit1702. Consequently, an original signal can be accurately read even whena potential corresponding to the signal retained at the node M2 variesto some degree.

By applying the above-described memory element 1730 to a memory devicesuch as a register or a cache memory included in the CPU, data in thememory device can be prevented from being lost owing to the stop of thesupply of the power supply voltage. Furthermore, shortly after thesupply of the power supply voltage is restarted, the memory device canbe restored to the same state as that before the power supply isstopped. Therefore, the power supply can be stopped even for a shorttime at an increased frequency in the CPU or one or a plurality of logiccircuits included in the CPU, resulting in lower power consumption.

Although the memory element 1730 is used in a CPU in this embodiment,the memory element 1730 can also be used in an LSI such as a digitalsignal processor (DSP), a custom LSI, or a programmable logic device(PLD), and a radio frequency identification (RF-ID).

The structures described in this embodiment can be combined asappropriate with any of the structures described in the otherembodiments.

EXAMPLE 1

In this example, a transistor corresponding to the transistor 100Aillustrated in FIGS. 2A to 2C was fabricated, and reliability tests wereconducted on the transistor. In this example, a sample 381 and a sample382 described below were fabricated and evaluated. Note that the sample381 and the sample 382 included the transistor of one embodiment of thepresent invention. The transistors included in the sample 381 and thesample 382 each had a channel length L of 3 μm and a channel width W of50 μm. The sample 381 and the sample 382 were different from each otherin a formation method of the insulating film 110.

The sample 381 and the sample 382 fabricated in this example will bedescribed below. Note that the reference numerals used for thetransistor 100A in FIGS. 2A to 2C are used in the following description.

First, the conductive film 106 was formed over the substrate 102. Aglass substrate was used as the substrate 102. For the conductive film106, a 10-nm-thick titanium film and a 100-nm-thick copper film wereformed with a sputtering apparatus.

Next, the insulating film 104 was formed over the substrate 102 and theconductive film 106. For the insulating film 104, a 400-nm-thick siliconnitride film and a 50-nm-thick silicon oxynitride film were formed witha plasma CVD apparatus.

The insulating film 104 was formed as follows. First, a 50-nm-thicksilicon nitride film was formed under the following conditions: thesubstrate temperature was set at 350° C.; a silane gas at a flow rate of200 sccm, a nitrogen gas at a flow rate of 2000 sccm, and an ammonia gasat a flow rate of 100 sccm were introduced into a chamber; the pressurewas set to 100 Pa; and an RF power of 2000 W was supplied betweenparallel-plate electrodes provided in the plasma CVD apparatus. Next,the flow rate of the ammonia gas was changed to 2000 sccm to form a300-nm-thick silicon nitride film. Then, the flow rate of the ammoniagas was changed to 100 sccm to form a 50-nm-thick silicon nitride film.After that, a 50-nm-thick silicon oxynitride film was formed under thefollowing conditions: the substrate temperature was set at 350° C., asilane gas at a flow rate of 20 sccm and a dinitrogen monoxide gas at aflow rate of 3000 sccm were introduced into the chamber, the pressurewas set to 40 Pa, and an RF power of 100 W was supplied between theparallel-plate electrodes provided in the plasma CVD apparatus.

Then, the oxide semiconductor film 108 was formed over the insulatingfilm 104. The oxide semiconductor film 108 was formed with a sputteringapparatus.

As the oxide semiconductor film 108, a 40-nm-thick IGZO film was formedunder the following conditions: the substrate temperature was set at130° C., an argon gas and an oxygen gas at a flow rate ratio of 9:1 wereintroduced into a chamber, the pressure was set to 0.6 Pa, and an ACpower of 2500 W was applied to an oxide semiconductor target (In:Ga:Zn=4:2:4.1 [atomic ratio]) placed in the sputtering apparatus.

After that, the insulating film 110 was formed over the insulating film104 and the oxide semiconductor film 108.

For the insulating film 110 in the sample 381, a 30-nm-thick firstsilicon oxynitride film, a 100-nm-thick second silicon oxynitride film,and a 20-nm-thick third silicon oxynitride film were formed with aplasma CVD apparatus. The first silicon oxynitride film was formed underthe following conditions: the substrate temperature was set at 350° C.,a silane gas at a flow rate of 20 sccm and a dinitrogen monoxide gas ata flow rate of 3000 sccm were introduced into a chamber, the pressurewas set to 200 Pa, and an RF power of 100 W was supplied betweenparallel-plate electrodes provided in the plasma CVD apparatus. Thesecond silicon oxynitride film was formed under the followingconditions: the substrate temperature was set at 220° C., a silane gasat a flow rate of 160 sccm and a dinitrogen monoxide gas at a flow rateof 4000 sccm were introduced into the chamber, the pressure was set to200 Pa, and an RF power of 1500 W was supplied between theparallel-plate electrodes provided in the plasma CVD apparatus. Thethird silicon oxynitride film was formed under the same conditions asthe first silicon oxynitride film.

For the insulating film 110 in the sample 382, a 150-nm-thicksingle-layer silicon oxynitride film was formed using a plasma CVDapparatus. The silicon oxynitride film was formed under the followingconditions: the substrate temperature was set at 350° C., a silane gasat a flow rate of 20 sccm and a dinitrogen monoxide gas at a flow rateof 18000 sccm were introduced into a chamber, the pressure was set to200 Pa, and an RF power of 100 W was supplied between parallel-plateelectrodes provided in the plasma CVD apparatus.

As described above, the sample 381 and the sample 382 were fabricatedthrough the same process except for the formation method of theinsulating film 110.

Next, heat treatment was performed on the sample 381 and the sample 382at a substrate temperature of 350° C. in a nitrogen atmosphere for onehour.

Then, oxygen plasma treatment was performed on the sample 381 and thesample 382 at a substrate temperature of 350° C. The oxygen plasmatreatment was performed for 250 seconds under the following conditions:oxygen at a flow rate of 3000 sccm was introduced into a chamber, thepressure was set to 40 Pa, and an RF power of 3000 W was suppliedbetween parallel-plate electrodes provided in a plasma CVD apparatus.

Next, the insulating films 110 and 104 in a desired region were removedto form the opening 143 reaching the conductive film 106.

Subsequently, the conductive film 112 was formed over the insulatingfilm 110 so as to cover the opening 143. For the conductive film 112, a10-nm-thick first In—Ga—Zn oxide and a 90-nm-thick second In—Ga—Zn oxidewere formed with a sputtering apparatus. The first In—Ga—Zn oxide wasformed under the following conditions: the substrate temperature was setat 170° C., an oxygen gas at a flow rate of 200 sccm was introduced intoa chamber, the pressure was set to 0.6 Pa, and an AC power of 2500 W wassupplied to an oxide semiconductor target (In:Ga:Zn=4:2:4.1 [atomicratio]) placed in the sputtering apparatus. The second In—Ga—Zn oxidewas formed under the following conditions: the substrate temperature wasset at 170° C., an argon gas at a flow rate of 180 sccm and an oxygengas at a flow rate of 20 sccm were introduced into the chamber, thepressure was set to 0.6 Pa, and an AC power of 2500 W was supplied tothe oxide semiconductor target (In:Ga:Zn=4:2:4.1 [atomic ratio]) placedin the sputtering apparatus.

After that, the insulating film 110 and the conductive film 112 wereprocessed into island shapes with a dry etching apparatus and a surfaceof the oxide semiconductor film 108 was partly exposed.

Then, the insulating film 116 was formed over the insulating film 104,the oxide semiconductor film 108, and the conductive film 112.

The insulating film 116 was formed through two steps: plasma treatmentand deposition treatment. The plasma treatment was performed under thefollowing conditions: the substrate temperature was set at 220° C., anargon gas at a flow rate of 100 sccm was introduced into a chamber, thepressure was set to 40 Pa, and an RF power of 1000 W was suppliedbetween parallel-plate electrodes provided in a plasma CVD apparatus.Subsequently, a 100-nm-thick silicon nitride film was formed under thefollowing conditions: the substrate temperature was set at 220° C.; asilane gas at a flow rate of 50 sccm, a nitrogen gas at a flow rate of5000 sccm, and an ammonia gas at a flow rate of 100 sccm were introducedinto the chamber; the pressure was set to 100 Pa; and an RF power of1000 W was supplied between the parallel-plate electrodes provided inthe plasma CVD apparatus.

Next, the insulating film 118 was formed over the insulating film 116.

For the insulating film 118, a 300-nm-thick silicon oxynitride film wasformed under the following conditions: the substrate temperature was setat 220° C., a silane gas at a flow rate of 160 sccm and a dinitrogenmonoxide gas at a flow rate of 4000 sccm were introduced into thechamber, the pressure was set to 200 Pa, and an RF power of 1500 W wassupplied between the parallel-plate electrodes provided in the plasmaCVD apparatus.

Next, the insulating films 116 and 118 in desired regions were removedto form the openings 141 a and 141 b reaching the oxide semiconductorfilm 108.

The openings 141 a and 141 b were formed by a dry etching method.

Then, a conductive film was formed over the insulating film 118 so as tocover the openings 141 a and 141 b and the conductive film was processedinto an island shape, whereby the conductive films 120 a and 120 bfunctioning as source and drain electrodes were formed.

For the conductive films 120 a and 120 b, a 50-nm-thick Ti film, a400-nm-thick Al film, and a 100-nm-thick Ti film were formed with asputtering apparatus.

Subsequently, 1.5-μm-thick acrylic was formed as a planarization film.

Next, heat treatment was performed at a substrate temperature of 250° C.in a nitrogen atmosphere for one hour.

Through the above steps, the samples 381 and 382 of this example werefabricated. Note that the highest temperature in the fabricationprocesses of the samples 381 and 382 was 350° C.

FIG. 50A shows the drain current-gate voltage characteristics of thetransistor with a channel length of 2 μm, FIG. 50B shows those of thetransistor with a channel length of 3 μm, and FIG. 50C shows those ofthe transistor with a channel length of 6 μm, in the sample 381. FIG.50D shows the drain current-gate voltage characteristics of thetransistor with a channel length of 2 μm, FIG. 50E shows those of thetransistor with a channel length of 3 μm, and FIG. 50F shows those ofthe transistor with a channel length of 6 μm, in the sample 382. Each ofthe transistors had a channel width of 50 μm. The measurement wasperformed at voltages between the source electrode and the drainelectrode (drain voltage) of 0.1 V and 10 V. In each graph, thecharacteristics of 20 transistors over the same substrate areoverwritten.

As shown in FIGS. 50A to 50F, all of the fabricated the samples 381 and382 have normal drain current-gate voltage characteristics (I_(d)−V_(g)characteristics).

The reliability of the transistors was evaluated. The reliabilityevaluation tests in this example were performed under the conditionswhere the gate voltage (V_(g)) was ±30 V; the drain voltage (V_(d)) andthe source voltage (V_(s)) were 0 V (comm); the stress temperature was60° C.; the time for stress application was one hour; and two kinds ofmeasurement environments, a dark environment and a photo environment(irradiation with light at approximately 10000 1× with a white LED),were employed. In other words, the source electrode and the drainelectrode of the transistor were set at the same potential, and apotential different from that of the source and drain electrodes wasapplied to the gate electrode for a certain time (here, one hour). Theabove tests are also referred to as gate bias-temperature-stress (GBT)tests.

A case where a potential applied to the gate electrode is higher than apotential applied to the source and drain electrodes is called positivestress, and a case where the potential applied to the gate electrode islower than the potential applied to the source and drain electrodes iscalled negative stress. Thus, the reliability evaluation was performedunder four conditions in total, i.e., positive GBT (dark) 376, negativeGBT (dark) 377, positive GBT (illuminated) 378, and negative GBT(illuminated) 379.

Note that the positive GBT (dark) can be referred to as positive biastemperature stress (PBTS), the negative GBT (dark) as negative biastemperature stress (NBTS), the positive GBT (illuminated) as positivebias illumination temperature stress (PBITS), and the negative GBT(illuminated) as negative bias illumination temperature stress (NBITS).

FIG. 51 shows the GBT test results of the samples 381 and 382. In FIG.51, the longitudinal axis represents the amount of change in thethreshold voltage (ΔV_(th)) of the transistors.

The results in FIG. 51 indicate that the amount of change in thethreshold voltage (ΔV_(th)) of each of the transistors included in thesamples 381 and 382 fabricated in this example was within thespecifications for driving a display device, in the GBT tests. Thus, itis confirmed that the transistors included in the samples 381 and 382each have high reliability.

Note that the amount of change in the threshold voltage of the sample382 in PBTS is smaller than that of the sample 381. This is probablybecause the silicon oxynitride film formed at 350° C. contains a smallamount of nitrogen oxide (NO_(x)).

FIG. 52A shows the overwritten I_(d)−V_(g) curves of the transistor inthe sample 381 before and after a current stress test. The currentstress test was conducted for 3600 seconds under the followingconditions: the sample temperature was 60° C., the drain voltage was 10V, the current between the source electrode and the drain electrode(drain current) was 100 nA, and the sample was placed in a darkenvironment. The current stress test was conducted on the transistorwith a channel length of 3 μm and a channel width of 3 μm. In this case,the change in the threshold voltage V_(th) of the transistor was 0.08 Vand the change in the field-effect mobility was −1.45%.

FIG. 52B shows the results of the transistor in the sample 382 obtainedin a similar manner. The change in the threshold voltage V_(th) of thetransistor was 0.014 V and the change in the field-effect mobility was−0.02%.

FIG. 52C shows the rate of a change in the drain current of thetransistor in the sample 381 during the current stress test. Similarly,FIG. 52D shows the rate of a change in the drain current of thetransistor in the sample 382. As shown in FIGS. 52C and 52D, a change inthe drain current due to the current stress is smaller in the transistorin the sample 382 than in the transistor in the sample 381. Thisindicates that the use of a single-layer silicon oxynitride film formedat a substrate temperature of 350° C. for the insulating film 110 canprevent the deterioration due to the current stress test.

The structure described in this example can be combined as appropriatewith any of the structures described in the above embodiments.

EXPLANATION OF REFERENCE

100: transistor, 100A: transistor, 100B: transistor, 100C: transistor,102: substrate, 104: insulating film, 106: conductive film, 108: oxidesemiconductor film, 108 i: region, 108 i_0: oxide semiconductor film,108 n: region, 108 n_2: region, 110: insulating film, 110_0: insulatingfilm, 112: conductive film, 112_0: conductive film, 112_1: conductivefilm, 112_2: conductive film, 116: insulating film, 118: insulatingfilm, 120 a: conductive film, 120 b: conductive film, 122: insulatingfilm, 140: mask, 141 a: opening, 141 b: opening, 143: opening, 201:transistor, 202: transistor, 203: transistor, 216: profile, 217:profile, 218: profile, 220: arrow, 221: sample, 222: sample, 223:sample, 225: region, 226: sample, 227: sample, 228: sample, 231: dashedline, 232: solid line, 235: dashed line, 241: sample, 242: sample, 243:sample, 244: sample, 251: wiring, 252: wiring, 253: wiring, 254: wiring,255: wiring, 256: node, 257: capacitor, 281: transistor, 282:transistor, 289: transistor, 310: region, 311: region, 312: region, 317:sample, 318: sample, 319: silicon, 321: region, 325: metal film, 329:centroid position, 351: sample, 352: sample, 353: sample, 354: sample,355: sample, 356: sample, 357: dotted line, 365: sample, 366: sample,367: sample, 368: conductive film, 370: oxide semiconductor film, 376:positive GBT (dark), 377: negative GBT (dark), 378: positive GBT(illuminated), 379: negative GBT (illuminated), 381: sample, 382:sample, 501: pixel circuit, 502: pixel portion, 504: driver circuitportion, 504 a: gate driver, 504 b: source driver, 506: protectioncircuit, 507: terminal portion, 550: transistor, 552: transistor, 554:transistor, 560: capacitor, 562: capacitor, 570: liquid crystal element,572: light-emitting element, 700: display device, 701: substrate, 702:pixel portion, 704: source driver circuit portion, 705: substrate, 706:gate driver circuit portion, 708: FPC terminal portion, 710: signalline, 711: wiring portion, 712: sealant, 716: FPC, 730: insulating film,732: sealing film, 734: insulating film, 736: coloring film, 738:light-blocking film, 750: transistor, 752: transistor, 760: connectionelectrode, 770: planarization insulating film, 772: conductive film,773: insulating film, 774: conductive film, 775: liquid crystal element,776: liquid crystal layer, 778: structure, 780: anisotropic conductivefilm, 782: light-emitting element, 783: droplet discharge apparatus,784: droplet, 785: layer, 786: EL layer, 788: conductive film, 790:capacitor, 791: touch panel, 792: insulating film, 793: electrode, 794:electrode, 795: insulating film, 796: electrode, 797: insulating film,800: inverter, 810: OS transistor, 820: OS transistor, 831: signalwaveform, 832: signal waveform, 840: dashed line, 841: solid line, 850:OS transistor, 860: CMOS inverter, 900: semiconductor device, 901: powersupply circuit, 902: circuit, 903: voltage generation circuit, 903A:voltage generation circuit, 903B: voltage generation circuit, 903C:voltage generation circuit, 904: circuit, 905: voltage generationcircuit, 906: circuit, 911: transistor, 912: transistor, 912A:transistor, 912B: transistor, 921: control circuit, 922: transistor,1189: interface, 1190: substrate, 1191: ALU, 1192: controller, 1193:decoder, 1194: controller, 1195: controller, 1196: register, 1197:controller, 1198: interface, 1199: ROM, 1281: transistor, 1400: dropletdischarge apparatus, 1402: substrate, 1403: droplet discharge means,1404: imaging means, 1405: head, 1406: dotted line, 1407: control means,1408: storage medium, 1409: image processing means, 1410: computer,1411: marker, 1412: head, 1413: material supply source, 1414: materialsupply source, 1701: circuit, 1707: capacitor, 1708: capacitor, 1709:transistor, 1710: transistor, 1713: transistor, 1714: transistor, 1720:circuit, 7000: display module, 7001: upper cover, 7002: lower cover,7003: FPC, 7004: touch panel, 7005: FPC, 7006: display panel, 7007:backlight, 7008: light source, 7009: frame, 7010: printed board, 7011:battery, 8000: camera, 8001: housing, 8002: display portion, 8003:operation button, 8004: shutter button, 8006: lens, 8100: finder, 8101:housing, 8102: display portion, 8103: button, 8200: head-mounteddisplay, 8201: mounting portion, 8202: lens, 8203: main body, 8204:display portion, 8205: cable, 8206: battery, 8300: head-mounted display,8301: housing, 8302: display portion, 8304: fixing band, 8305: lens,9000: housing, 9001: display portion, 9003: speaker, 9005: operationkey, 9006: connection terminal, 9007: sensor, 9008: microphone, 9050:operation button, 9051: information, 9052: information, 9053:information, 9054: information, 9055: hinge, 9100: television device,9101: portable information terminal, 9102: portable informationterminal, 9200: portable information terminal, 9201: portableinformation terminal, 9500: display device, 9501: display panel, 9502:display region, 9503: region, 9511: hinge, and 9512: bearing.

This application is based on Japanese Patent Application serial no.2016-028586 filed with Japan Patent Office on Feb. 18, 2016 and JapanesePatent Application serial no. 2016-193217 filed with Japan Patent Officeon Sep. 30, 2016, the entire contents of which are hereby incorporatedby reference.

1. A manufacturing method of a semiconductor device comprising the stepsof: forming a first oxide semiconductor film over a substrate; forming agate insulating layer comprising at least silicon oxynitride over thefirst oxide semiconductor film using a plasma CVD apparatus; performingoxygen plasma treatment after forming the gate insulating layer usingthe plasma CVD apparatus; and forming a gate electrode on the gateinsulating layer after preforming the oxygen plasma treatment.
 2. Themanufacturing method of a semiconductor device according to claim 1,further comprising the step of performing heat treatment at atemperature higher than or equal to 150° C. and lower than or equal to450° C. after forming the gate electrode.
 3. The manufacturing method ofa semiconductor device according to claim 1, wherein the first oxidesemiconductor film comprises indium, gallium, and zinc.
 4. Themanufacturing method of a semiconductor device according to claim 1,wherein the gate insulating layer is formed at a substrate temperaturelower than or equal to 350° C.
 5. The manufacturing method of asemiconductor device according to claim 1, wherein the oxygen plasmatreatment is performed at a substrate temperature lower than or equal to350° C.
 6. The manufacturing method of a semiconductor device accordingto claim 1, wherein the gate electrode is formed using a sputteringapparatus.
 7. The manufacturing method of a semiconductor deviceaccording to claim 1, wherein the gate electrode comprises a secondoxide semiconductor film.
 8. The manufacturing method of a semiconductordevice according to claim 7, wherein the second oxide semiconductor filmcomprises indium, gallium, and zinc.
 9. A manufacturing method of asemiconductor device comprising the steps of: forming a first oxidesemiconductor film over a substrate; forming a gate insulating layercomprising at least silicon oxynitride over the first oxidesemiconductor film using a plasma CVD apparatus; performing oxygenplasma treatment after forming the gate insulating layer using theplasma CVD apparatus; forming a second oxide semiconductor film on thegate insulating layer in an atmosphere comprising oxygen by sputteringafter performing the oxygen plasma treatment; and forming a gateelectrode by etching the second oxide semiconductor film.
 10. Themanufacturing method of a semiconductor device according to claim 9,further comprising the step of performing heat treatment at atemperature higher than or equal to 150° C. and lower than or equal to450° C.
 11. The manufacturing method of a semiconductor device accordingto claim 9, wherein the first oxide semiconductor film comprises indium,gallium, and zinc.
 12. The manufacturing method of a semiconductordevice according to claim 9, wherein the gate insulating layer is formedat a substrate temperature lower than or equal to 350° C.
 13. Themanufacturing method of a semiconductor device according to claim 9,wherein the oxygen plasma treatment is performed at a substratetemperature lower than or equal to 350° C.
 14. The manufacturing methodof a semiconductor device according to claim 9, wherein the second oxidesemiconductor film comprises indium, gallium, and zinc.
 15. Amanufacturing method of a semiconductor device comprising the steps of:forming a first oxide semiconductor film over a substrate; forming agate insulating layer comprising silicon, oxygen, and nitrogen over thefirst oxide semiconductor film using a plasma CVD apparatus; performingoxygen plasma treatment after forming the gate insulating layer usingthe plasma CVD apparatus; and forming a gate electrode on the gateinsulating layer after performing the oxygen plasma treatment.
 16. Themanufacturing method of a semiconductor device according to claim 15,further comprising the step of performing heat treatment at atemperature higher than or equal to 150° C. and lower than or equal to450° C. after forming the gate electrode.
 17. The manufacturing methodof a semiconductor device according to claim 15, wherein the first oxidesemiconductor film comprises indium, gallium, and zinc.
 18. Themanufacturing method of a semiconductor device according to claim 15,wherein the gate insulating layer is formed at a substrate temperaturelower than or equal to 350° C.
 19. The manufacturing method of asemiconductor device according to claim 15, wherein the oxygen plasmatreatment is performed at a substrate temperature lower than or equal to350° C.
 20. The manufacturing method of a semiconductor device accordingto claim 15, wherein the gate electrode is formed using a sputteringapparatus.
 21. The manufacturing method of a semiconductor deviceaccording to claim 15, wherein the gate electrode comprises a secondoxide semiconductor film.
 22. The manufacturing method of asemiconductor device according to claim 21, wherein the second oxidesemiconductor film comprises indium, gallium, and zinc.